IRLR2908 ,80V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsContinuous Drain Current, V @ 10V (Silicon ..
IRLR2908TRPBF ,80V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsContinuous Drain Current, V @ 10V (Silicon ..
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ISPLSI2032A-110LT48 , In-System Programmable High Density PLD
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ISPLSI2032A-80LT48I , In-System Programmable High Density PLD
IRLR2908
80V Single N-Channel HEXFET Power MOSFET in a D-Pak package
PD - 94501
International IRLR2908
Tart Rectifier AUTOMOTIVE MOSFET IRLU2908
HEXFET© Power MOSFET
Features
I Advanced Process Technology D
l Ultra Low On-Resistance VDSS = 80V
l Dynamic dv/dt Rating
I 175°C Operating Temperature . A RDS(on) = 28mQ
I Fast Switching G
I Repetitive Avalanche Allowed up to Tjmax I - 30 A
Descri ption
Specifically designed for Automotive applications, this HEXFET © Power MOSFET
utilizes the latest processing techniques to achieve extremely lowon-resistance persilicon
area. Additional features ofthis H EXFET power MOSFET are a 175°Cjunction operating
temperature, low ROJC, fast switching speed and improved repetitive avalanche rating.
These features combine to make this design an extremely efficient and reliable device for
use in Automotive applications and a wide variety of other applications.\
The D-Pak is designed for surface mounting using vapor phase, infrared, or wave
solderingtechniques. The straight lead version (IRFU series) is torthrough-hole mounting D-Pak l-Pak
applications. Powerdissipation levels upto1.5watts are possible in typical surface mount IRLR2908 IRLU2908
applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, Vss @ 10V (Silicon Limited) 39 A
ID @ To = 100°C Continuous Drain Current, VGS @ 10V (See Fig. 9) 28
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) 30
IDM Pulsed Drain Current C) 150
Pro @Tc = 25°C Maximum Power Dissipation 120 W
Linear Derating Factor 0.77 W/''C
VGS Gate-to-Source Voltage i 16 V
EAS Single Pulse Avalanche Energy (Thermally Limited) © 180 mJ
EAS (tested) Single Pulse Avalanche Energy Tested Value © 250
IAR Avalanche Current (D See Fig.12a,12b,15,16 A
EAR Repetitive Avalanche Energy © m J
dv/dt Peak Diode Recovery dv/dt © 2.3 V/ns
To Operating Junction and -55 to + 175 °C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
Parameter Typ. Max. Units
ROJC Junction-to-Case - 1 .3 °C/W
ROJA Junction-to-Ambient (PCB Mount) - 40
ROJA Junction-to-Ambient - 1 10
1
02/13/03
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IRLR2908/IRLU2908
International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 80 - - V VGS = 0V, lo = 250pA
ABVDss/ATJ Breakdown Voltage Temp. Coemcient - 0.085 - W'C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 22.5 28 mn VGS = 10V, ID = 23A (0
- 25 30 V65 = 4.5V, ID = 20A (9
Vegan) Gate Threshold Voltage 1.0 - 2.5 V Vos = VGS, ID = 250uA
gfs Fon/vard Transconductance 35 - - S Vos = 25V, ID = 23A
loss Drain-to-Source Leakage Current - - 20 pA Vos = 80V, VGS = 0V
- - 250 Vos = 80V, VGS = 0V, T, = 125°C
less Gate-to-Source Forward Leakage - - 200 nA Vss = 16V
Gate-to-Source Reverse Leakage - - -200 VGS = -16V
Qg Total Gate Charge - 22 33 nC ID = 23A
Qgs Gate-to-Source Charge - 6.0 9.1 Vos = 64V
di Gate-to-Drain ("Miller") Charge - 11 17 VGS = 4.5V
td(on) Turn-On Delay Time - 12 - ns VDD = 40V
t, Rise Time - 95 - ID = 23A
111(on Turn-Off Delay Time - 36 - Rs = 8.39
if Fall Time - 55 - VGS = 4.5V ©
Lo Internal Drain Inductance - 4.5 - nH Between lead, _ D
6mm (0.25in.) Ki)
Ls Internal Source Inductance - 7.5 - from package 6&7]
and center of die contact S
Ciss Input Capacitance - 1890 - pF VGS = 0V
Coss Output Capacitance - 260 - Vos = 25V
Crss Reverse Transfer Capacitance - 35 - f = 1.0MHz, See Fig. 5
Coss Output Capacitance - 1920 - VGS = 0V, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance - 170 - VGS = 0V, Vros = 64V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 310 - Vss = 0V, Vros = 0V to 64V
Diode Characteristics
Parameter Min Typ. Max. Units Conditions
ls Continuous Source Current - - 39 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 150 integral reverse G
(Body Diode) C) p-njunction diode. S
Vso Diode Forward Voltage - - 1.3 V TJ = 25°C, ls = 23A, VGS = 0V ©
in Reverse Recovery Time - 75 110 ns To = 25°C, IF = 23A, VDD = 25V
er Reverse Recovery Charge - 210 310 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes (D through are on page 11
HEXFET® is a registered trademark of International Rectifier.
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