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IRLR024ZIRN/a2500avai55V Single N-Channel HEXFET Power MOSFET in a D-Pak package
IRLU024ZIRN/a1000avai55V Single N-Channel HEXFET Power MOSFET in a I-Pak package


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IRLR024Z-IRLU024Z
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package
International
TOR Rectifier AUTOMOTIVE MOSFET
PD - 95825A
IRLR024Z
IRLU024Z
HEXFET© Power MOSFET
Features
:1 Logic Level D V - 55V
a Advanced Process Technology DSS -
n Ultra LowOn-Resistance
n 175°C Operating Temperature A RDS(0n) = 58mQ
a Fast Switching G
n Repetitive Avalanche Allowed up to TImax ID = 16A
Description
Specifically designed for Automotive applications, this HEXFETO
Power MOSFET utilizes the latest processing techniques to 1tiaii)t, :gib
achieve extremely low on-resistance per silicon area. Additional Ni'5''i! Re')
features of this design are a 175°C junction operating tempera- l, '
ture, fast switching speed and improved repetitive avalanche
rating . These features combine to make this design an extremely
etticientand reliable device foruseinAutomotiveapplications and D-Pak I-Pak
a wide variety of other applications. IRLR024Z IRLU024Z
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 16
ID @ To = 100°C Continuous Drain Current, VGS @ 10V 11 A
IDM Pulsed Drain Current CD 64
PD @TC = 25°C Power Dissipation 35 W
Linear Derating Factor 0.23 W/°C
VGS Gate-to-Source Voltage i 16 V
EAS(ThermaWVmited) Single Pulse Avalanche Energy© 25 mJ
EAS (Tested ) Single Pulse Avalanche Energy Tested Value © 25
IAR Avalanche Current C) See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy © mJ
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
ROJC Junction-to-Case - 4.28
ROJA Junction-to-Ambient (PCB mount) © - 40 °C/W
ROJA Junction-to-Ambient - 1 10
HEXFET® is a registered trademark of International Rectifier.
1
06/21/04
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IRLR/U024Z
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 - - V VGS = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.053 - V/°C Reference to 25°C, ID = 1mA
- 46 58 Vss = 10V, ID = 9.6A ©
RDS(on) Static Drain-to-Source On-Resistance - - 80 mn VGS = 5.0V, ID = 5.0A ©
- - 100 VGS = 4.5V, b = 3.0A ©
VGS(th) Gate Threshold Voltage 1.0 - 3.0 V Vos = VGS, ID = 250PA
gts Forward Transconductance 7.4 - - S Vos = 25V, ID = 9.6A
loss Drain-to-Source Leakage Current - - 20 pA Vos = 55V, Vss = 0V
- - 250 Vos = 55V, VGS = 0V, T, = 125°C
less Gate-to-Source Forward Leakage - - 200 nA Vss = 16V
Gate-to-Source Reverse Leakage - - -200 Vss = -16V
Qg Total Gate Charge - 6.6 9.9 b = 5.0A
Qgs Gate-to-Source Charge - 1.6 - nC Vos = 44V
di Gate-to-Drain ("Miller") Charge - 3.9 - VGS = 5.0V (3)
tam Turn-On Delay Time - 8.2 - Vor, = 28V
t, Rise Time - 43 - ID = 5.0A
td(off) Turn-Off Delay Time - 19 - ns Rs = 28 Q
t, Fall Time - 16 - VGS = 5.0V ©
Lo Internal Drain Inductance - 4.5 - Between lead, D
nH 6mm (0.25in.) ir, "
Ls Internal Source Inductance - 7.5 - from package 63L - "
and center of die contact s
Ciss Input Capacitance - 380 - VGS = 0V
Cass Output Capacitance - 62 - Vos = 25V
Crss Reverse Transfer Capacitance - 39 - pF f = 1.0MHz
Coss Output Capacitance - 180 - VGS = 0V, Vos = 1.0V, f = 1.0MHz
Cogs Output Capacitance - 50 - VGS = 0V, Vos = 44V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 81 - VGS = 0V, I/os = 0V to 44V Cr)
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current - - 16 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 64 integral reverse G
(Body Diode) © p-njunction diode. S
VSD Diode Forward Voltage - - 1.3 V TJ = 25°C, Is = 9.6A, VGs = 0V ©
trr Reverse Recovery Time - 16 24 ns T J = 25°C, IF = 9.6A, VDD = 28V
Q" Reverse Recovery Charge - 11 17 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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