IRLMS5703 ,-30V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) packageapplications where printed circuit board spaceis at a premium. It's unique thermal design and RDS( ..
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IRLMS5703-IRLMS5703TR
-30V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
International
TOR, Rectifier
Generation V Technology
Micr06 Package Style
Ultra Low Rds(on)
P-Channel MOSFET
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The Micr06 package with its customized leadframe
produces a HEXFET power MOSFET with Rds(on)
60% less than a similar size SOT-23. This package is
PD-91413E
IRLMS5703
HEXFET® Power MOSFET
DD] :3
6|]:3 -C0s
Top View
”[j LED VDSS = -30V
RDS(on) = 0.209
ideal for applications where printed circuit board space M mo 6
is at a premium. It's unique thermal design and RDSM
reduction enables a current-handling increase of nearly
300% compared to the SOT-23.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA-- 25°C Continuous Drain Current, VGS @ -10V -2.3
In @ TA-- 70°C Continuous Drain Current, VGS @- 10V -1.9 A
IDM Pulsed Drain Current co -13
Pro @TA = 25°C Power Dissipation 1.7 W
Linear Derating Factor 13 mW/°C
Ves Gate-to-Source Voltage k 20 V
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
To,TsTs Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance Ratings
Parameter Min. Typ. Max Units
ReJA Maximum Junction-to-Ambient © - - 75 °C/W
4/7/04
IRLMS5703 International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)Dss Drain-to-Source Breakdown Voltage -30 - - V VGs = 0V, ID = -250pA
AV
RDSW) Static Drain-to-Source On-Resistance - - 0.20 g VGS = -10V, ID = -1.6A Ci)
- - 0.40 VGs = -4.5V, ID = -0.80A GD
VGS(th) Gate Threshold Voltage -1.0 - - V Ws = VGs, ID = -250pA
git Forward Transconductance 1.1 - - S VDs = -10V, ID = -0.80A
loss Drain-to-Source Leakage Current - - -1.0 PA VDS = -24V, VGS = 0V 0
- - -25 Ws = -24V, VGs = 0V, To = 125 C
less Gate-to-Source Forward Leakage - - 100 n A VGs = -20V
Gate-to-Source Reverse Leakage - - -100 VGs = 20V
Qg Total Gate Charge - 7.2 11 ID = -1.6A
Qgs Gate-to-Source Charge - 1.4 2.1 nC VDs = -24V
di Gate-to-Drain ("Miller") Charge - 2.3 3.4 VGs = -1OV, See Fig. 6 and 9 @
Gon) Turn-On Delay Time - 10 - VDD = -15V
tr Rise Time - 12 - ns ID = -1.6A
td(off) Turn-Off Delay Time - 20 - Rs = 6.29
tr Fall Time - 8.4 - RD = 9.29, See Fig. 10 (ii)
Ciss Input Capacitance - 170 - VGs = 0V
Cogs Output Capacitance - 89 - pF VDs = -25V
Crss Reverse Transfer Capacitance - 44 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current MOSFET symbol D
(Body Diode) - - -1.7 A showing the
ISM Pulsed Source Current - - -13 integral reverse G
(Body Diode) (D p-n junction diode. S
VSD Diode Forward Voltage - - -1.2 V Tu = 25°C, Is = -1.6A, VGS = 0V ©
trr Reverse Recovery Time - 29 44 ns TJ = 25°C, IF = -1.6A
G, Reverse RecoveryCharge - 27 41 nC di/dt = -100A/ps ©
Notes:
co Repetitive rating; pulse width limited by © Pulse width 3 300ps; duty cycle S 2%.
max. junction temperature. ( See fig. 11 )
© Iso s -1.6A, di/dt s -140A/ps, VDD s V(BR)DSS! (ii) Surface mounted on FR-4 board, ts Ssec.
T J: 150°C
