IRLML6244TRPBF ,20V Single N-Channel HEXFET Power MOSFET in a Micro 3 packagePD - 97535AIRLML6244TRPbFHEXFET Power MOSFETV20 VDSV ±12 VGS Max
IRLML6244TRPBF
20V Single N-Channel HEXFET Power MOSFET in a Micro 3 package
International
IEER Rectifier
PD - 97535A
IRLML6244TRPbF
H EXFET© Power MOSFET
Vos 20
Vas Max =12 V G
RDS(on) max
(@Vss = 4.5V) 21.0 mf2
RDS(on) max
(@1/ss = 2.5V) 27.0 mn s
Micro3TM (SOT-23)
IRLML6244TRPbF
Application(s)
. Load/ System Switch
Features and Benefits
Features
Low RDs(on)( < 21 m9)
Industry-standard SOT-23 Package
results in
Benefits
Lower conduction losses
Multi-vendor compatibility
RoHS compliant containing no lead, no bromide and no halogen =r Environmentally friendly
Absolute Maximum Ratings
Symbol Parameter Max. Units
VDS Drain-Source Voltage 20 V
ID @ TA = 25°C Continuous Drain Current, I/ss @ 10V 6.3
ID @ T, = 70°C Continuous Drain Current, Vss @ 10V 5.1 A
IDM Pulsed Drain Current 32
PD @TA = 25°C Maximum Power Dissipation 1.3 W
PD @TA = 70°C Maximum Power Dissipation 0.80
Linear Derating Factor 0.01 WPC
Vas Gate-to-Source Voltage i 12 V
TJ,TSTG Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Symbol Parameter Typ. Max. Units
Ram Junction-to-Ambient © - 100 °C/W
RwA Junction-to-Ambient (t<10s) © - 99
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes co through © are on page 10
03/09/12
IRLIVI L6244TRPbF International
TOR Rectifier
Electric Characteristics © T J = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 20 - - V I/ss = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 7.8 - mV/°C Reference to 25°C, ID = 1mA
RDsm Static Drain-to-Source On-Resistance -- 16.0 21.0 m9. l/ss = ASN, ID = 6.3A ©
--- 22.0 27.0 Vss = 2.5V, ID = 5.1A ©
VGS(th) Gate Threshold Voltage 0.5 0.9 1.1 V VDS = Vas, b = 10pA
IDSS Drain-to-Source Leakage Current - - 1.0 pA Vros = 16V, Vas = 0V
-- -- 150 Vros = 16V, Vss = 0V, T, = 125°C
less Gate-to-Source Forward Leakage - - 100 Veg = 12V
Gate-to-Source Reverse Leakage - - -100 nA l/ss = -12V
Re Internal Gate Resistance - 1.7 - Q
gfs Forward Transconductance 17 - - S VDS = 10V, ID = 6.3A
q, Total Gate Charge - 8.9 - ID = 6.3A
Qgs Gate-to-Source Charge - 0.68 - nC VDS =10V
di Gate-to-Drain ("Miller") Charge - 4.4 - l/ss = 4.5V ©
tom Turn-On Delay Time - 4.9 - VDD =10V©
t, Rise Time - 7.5 - b = 1.0A
tam) Turn-Off Delay Time - 19 - ns Re = 6.89
t, Fall Time -- 12 - l/ss = 4.5V
Ciss In put Capacitance - 700 - Ves = 0V
Coss Output Capacitance - 140 - pF Vros = 16V
Crss Reverse Transfer Capacitance - 98 - f = 1.0MHz
Source - Drain Ratings and Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - _ 1 3 MOSFET symbol D
(Body Diode) . A showing the
ISM Pulsed Source Current - - 32 integral reverse G
(Body Diode) C) p-n junction diode. S
Vso Diode Forward Voltage - - 1.2 V T, = 25°C, Is = 6.3A, Vas = 0V ©
tn Reverse Recovery Time - 12 18 ns T: = 25°C, l/n = 15V, |F=1.3A
er Reverse Recovery Charge - 5.1 7.7 nC di/dt = 100A/ps ©
2
