IRLML5203TRPBF ,-30V Single P-Channel HEXFET Power MOSFET in a Micro 3 packageapplicationswhere printed circuit board space is at a premium. The lowprofile (<1.1mm) of the Micr ..
IRLML6244TRPBF ,20V Single N-Channel HEXFET Power MOSFET in a Micro 3 packagePD - 97535AIRLML6244TRPbFHEXFET Power MOSFETV20 VDSV ±12 VGS Max
IRLML5203TRPBF
-30V Single P-Channel HEXFET Power MOSFET in a Micro 3 package
International
TOR. Rectifier
|RLML5203PbF
q Ultra Low On-Resistance HEXFET® Power MOSFET
o P-Channel MOSFET
q Surface Mount VDSS RDS(on) max (mf2) ID
q Available in Tape & Reel -30V 98@VGs = -10V -3.0A
q Low Gate Charge 165@Vss = -4.51/ -2.6A
q Lead-Free
o RoHS Compliant, Halogen-Free
Description
These P-channel MOSFETs from International Rectifier utilize
advanced processing techniquesto achieve the extremely low
on-resistance per silicon area. This benefit provides the
designer with an extremely efficient device for use in battery
and load managementapplications.
A thermally enhanced large pad leadframe has been
incorporated into the standard SOT-23 packageto produce a
HEXFET Power MOSFET with the industry's smallestfootprint.
This package, dubbed the Micr03TM, is ideal forapplications
where printed circuit board space is at a premium. The low
profile (<1.1mm) of the Micros allows it to fit easily into
extremely thin application environments such as portable
electronics and PCMCIA cards. The thermal resistance and
power dissipation are the best available.
Micr03TM
Base Part Number Package Type Standard Pack . Orderable Part Number
Form Quantity
IRLML5203TRPbF Micr03TM (SOT-23) Tape and Reel 3000 IRLML5203TRPbF
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain- Source Voltage -30 V
ID @ TA = 25°C Continuous Drain Current, l/ss @ -10V -3.0
ID @ TA-- 70°C Continuous Drain Current, VGS @ -10V -2.4 A
IDM Pulsed Drain Current (D -24
PD @TA = 25°C Power Dissipation 1.25 W
Po @TA = 70°C Power Dissipation 0.80
Linear Derating Factor 10 mW/°C
l/ss Gate-to-Source Voltage 1 20 V
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Parameter Max. Units
ROJA Maximum Junction-to-Ambient® 100 ''C/W
fl © 2014 International Rectifier Submit Datasheet Feedback April 28, 2014
|RLML5203PbF
Electrical Characteristics © Tg = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -30 - - V l/tss = 0V, ID = -250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.019 - V/°C Reference to 25°C, ID = -1mA
RDS(on) Static Drain-to-Source On-Resistance - -- 98 mn Vss = -10V, ID = -3.0A ©
- - 165 Vss = -4.5V, ID = -2.6A ©
Vegan) Gate Threshold Voltage -1.0 - -2.5 V Vos = Vas, ID = -250uA
gfs Forward Transconductance 3.1 - - S VDs = -10V, ID = -3.0A
loss Drain-to-Source Leakage Current _- _- lf, PA $2: : :m It : g, TJ = 70°C
less Gate-to-Source Forward Leakage - - -100 n A l/tss = -20V
Gate-to-Source Reverse Leakage - - 100 Vss = 20V
Qg Total Gate Charge - 9.5 14 ID = -3.0A
Qgs Gate-to-Source Charge - 2.3 3.5 nC Vos = -24V
di Gate-to-Drain ("Miller") Charge - 1.6 2.4 Vas = -10V C)
two”) Turn-On Delay Time - 12 - VDD = -15V ©
tr Rise Time - 18 - ns ID = -1.0A
td(0ff) Turn-Off Delay Time - 88 - Rs = 6.09
if Fall Time - 52 - l/tss = -10V
Ciss Input Capacitance - 510 - Vss = 0V
Coss Output Capacitance - 71 - pF VDs = -25V
Crss Reverse Transfer Capacitance - 43 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - -1.3 A showing the
ISM Pulsed Source Current - _ -24 integral reverse a
(Body Diode) co p-n junction diode. s
Vso Diode Forward Voltage - - -1.2 V To = 25°C, Is = -1.3A, Vss = 0V ©
trr Reverse Recovery Time - 17 26 ns To = 25°C, IF = -1.3A
Qrr Reverse Recovery Charge - 12 18 nC di/dt = -100A/ps ©
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature.
© Pulse width s: 400ps; duty cycle 3 2%.
Surface mounted on FR-4 board, ts Ssec.
© 2014 International Rectifier
Submit Datasheet Feedback
April 28, 2014
