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IRLML2803
30V Single N-Channel HEXFET Power MOSFET in a Micro 3 package
International
TOR Rectifier
Generation V Technology
Ultra Low On-Resistance
N-Channel MOSFET
SOT-23 Footprint
Low Profile (<1.1mm)
Available in Tape and Reel
Fast Switching
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, providesthe designerwith an extremely efficient
and reliable device for use in a widevariety ofapplications.
PD - 91258F
RLML2803
HEXFET© Power MOSFET
VDSS = 30V
RDS(on) = 0.259
A customized leadframe has been incorporated into the MicroSW
standard SOT-23 package to produce a HEXFET Power
MOSFET with the industry's smallest footprint. This
package, dubbed the Micro3, is ideal for applications
where printed circuit board space is at a premium. The low
profile (<1.1mm) of the Micro3 allows it to fit easily into
extremely thin application environments such as portable
electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, Vas @ 10V 1.2
In © TA = 70°C Continuous Drain Current, I/ss @ 10V 0.93 A
IDM Pulsed Drain Current CO 7.3
P D @TA = 25°C Power Dissipation 540 mW
Linear Derating Factor 4.3 mW/°C
VGS Gate-to-Source Voltage t20 V
EAS Single Pulse Avalanche Energy© 3.9 mJ
dv/dt Peak diode Recovery dv/dt© 5.0 V/ns
Tu ,TSTG Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Parameter Typ. Max. Units
ReJA Maximum Junction-to-Ambient © - 230 °C/W
1
12/14/11
IRLML2803
International
TOR Rectifier
Electrical Characteristics @ To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BRpss Drain-to-Source Breakdown Voltage 30 - - V VGs = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.029 - V/''C Reference to 25''C, ID = 1mA
. . . - - 0.25 VGS = 10V, ID = 0.91A ©
RDS(on) Static Drain-to-Source On-Resistance - - O. 40 Q VGS = 4.5V, '0 = o. 46 A ©
VGSM Gate Threshold Voltage 1.0 - - V N/os = l/ss, ID = 250pA
9ts Forward Transconductance 0.87 - --- S VDs = 10V, ID = 0.46A
loss Drain-to-Source Leakage Current - - 1.0 pA Vos = 24V, VGS = 0V
- - 25 l/cos = 24V, Vss = 0V, To = 125°C
less Gate-to-Source Forward Leakage - - -100 n A VGs = -20V
Gate-to-Source Reverse Leakage - - 100 VGS = 20V
% Total Gate Charge - 3.3 5.0 ID = 0.91A
Qgs Gate-to-Source Charge - 0.48 0.72 nC N/os = 24V
di Gate-to-Drain ("Miller") Charge - 1.1 1.7 Vss = 10V, See Fig. 6 and 9 ©
td(on) Turn-On Delay Time - 3.9 - VDD = 15V
tr Rise Time - 4.0 - ID = 0.91A
tdist) Turn-Off Delay Time - 9.0 - ns Rs = 6.29
tf Fall Time - 1.7 - RD =16Q,See Fig. 10 ©
Ciss Input Capacitance - 85 - VGS = 0V
Coss Output Capacitance - 34 - pF l/cos = 25V
Crss Reverse Transfer Capacitance - 15 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
. - - 0.54
(Body Diode) A showmg the
ISM Pulsed Source Current - - 7.3 Integral reverse G
(Body Diode) OD p-n junction diode. s
VSD Diode Forward Voltage - - 1.2 V To = 25°C, IS = 0.91A, Vss = 0V ©
trr Reverse Recovery Time - 26 40 ns T., = 25°C, IF = 0.91A
Qrr Reverse RecoveryCharge - 22 32 nC di/dt = 100A/ps ©
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© ' S 0.91A, di/dt S 120A/ps, VDD S V(BR)DSS:
Tu f 150°C
© Pulse width S 300ps; duty cycle I 2%.
© Surface mounted on FR-4 board, ts Ssec.
s Limited by TJmax, starting To = 25°C, L = 9.4mH, Rs = 259, IAS = 0.9A.
