IRLML2246TRPBF ,-20V Single P-Channel HEXFET Power MOSFET in a Micro 3 packagePD - 97630AIRLML2246TRPbFHEXFET Power MOSFETV-20 VDS
IRLML2246TRPBF
-20V Single P-Channel HEXFET Power MOSFET in a Micro 3 package
Infernoti
IEER Rectifier
PD - 97630A
IRLML2246TRPbF
H EXFET© Power MOSFET
VGS Max
RDS(on) max
(@ l/ss = -4.5V)
135 mn
RDS(on) max
(@ VGS = -2.5V)
Micro3TM (SOT-23)
Application(s)
IRLML2246TRPbF
o System/Load Switch
Features and Benefits
Features
Industry-standard pinout
Compatible with existing Surface Mount Techniques
RoHS compliant containing no lead, no bromide and no halogen
MSL1, Consumer qualification
Absolute Maximum Ratings
Benefits
Multi-vendor compatibility
results in Easier manufacturing
=r Environmentally friendly
Increased reliability
Symbol Parameter Max. Units
Vos Drain-Source Voltage -20 V
ID @ T, = 25°C Continuous Drain Current, Vss @ -10V -2.6
ID @ TA = 70°C Continuous Drain Current, Vas @ -10V -2.1 A
IDM Pulsed Drain Current -11
Po or, = 25°C Maximum Power Dissipation 1.3 W
Po OT, = 70°C Maximum Power Dissipation 0.80
Linear Derating Factor 0.01 WPC
Vss Gate-to-Source Voltage * 12 V
Ts, Tsm Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Symbol Parameter Typ. Max. Units
Rm Junction-to-Ambient © - 100 o C AV
ROJA Junction-to-Ambient (t<10s) © - 99
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes co through © are on page 10
1
03/09/12
IRLML2246TRPbF
International
TOR Rectifier
Electric Characteristics © To = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -20 - - V Vss = 0V, ID = -250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 9.5 - mV/°C Reference to 25°C, ID = -1mA
R0540”) Static Drain-to-Source On-Resistance - 90 135 mf2 Vss = -4.5V, ID = -2.6A co
- 157 236 Ves = -2.5V, lo = -2.1A ©
VGS(th) Gate Threshold Voltage -0.4 - -1.1 V 1/ros = Vas, ID = -10pA
loss Drain-to-Source Leakage Current - - -1.0 pA Vos = -16V, Vss = 0V
-- -- -150 VDs = -16V, Vss = 0V, T, = 125°C
less Gate-to-Source Forward Leakage - - 100 Vss = 12V
Gate-to-Source Reverse Leakage - - -100 nA VGS = -12V
Re Internal Gate Resistance - 16 - Q
gfs Forward Transconductance 3.4 - - S Vos = -1OV, ID = -2.6A
q, Total Gate Charge - 2.9 - ID = -2.6A
Qgs Gate-to-Source Charge - 0.52 - nC Vos =-1OV
di Gate-to-Drain ("Miller") Charge -- 1.2 -- Vss = -4.5V ©
tam) Turn-On Delay Time - 5.3 - VDD =-10V©
t, Rise Time - 7.7 - ID = -1.0A
tam) Turn-Off Delay Time - 26 - ns Re = 6.89
t, Fall Time - 16 - Ves = -4.5V
Ciss Input Capacitance - 220 - I/ss = 0V
Coss Output Capacitance - 7O - pF VDS = -16V
Crss Reverse Transfer Capacitance -- 48 -- f = 1.0KHz
Source - Drain Ratings and Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - _ -1 3 MOSFET symbol D
(Body Diode) . A showing the
ISM Pulsed Source Current - _ -11 integral reverse G
(Body Diode) CD p-n junction diode. S
Vso Diode Forward Voltage - - -1.2 V T: = 25°C, Is = -2.6A, Vss = 0V ©
tn Reverse Recovery Time -- 17 26 ns T, = 25°C, l/n = -15V, lr---2.6A
a,, Reverse Recovery Charge - 6.2 9.3 nC di/dt = 100A/ps ©
2
