IRLML2060TRPBF ,60V Single N-Channel HEXFET Power MOSFET in a Micro 3 packagePD - 97448AIRLML2060TRPbFHEXFET Power MOSFETV60 VDS
IRLML2060TRPBF
60V Single N-Channel HEXFET Power MOSFET in a Micro 3 package
International
IEER Rectifier
PD - 97448A
IRLML2060TRPbF
H EXFET© Power MOSFET
Vas Max
RDS(on) max
(OI/ss = 10V)
480 m9
RDS(on) max
(@ I/ss = 4.5V)
640 mn
Micro3TM (SOT-23)
IRLML2060TRPbF
Application(s)
. Load/ System Switch
Features and Benefits
Features
Industry-standard pinout
Compatible with existing Surface Mount Techniques
RoHS compliant containing no lead, no bromide and no halogen
Absolute Maximum Ratings
Benefits
Multi-vendor compatibility
results in Easier manufacturing
=> Environmentally friendly
Increased reliability
Symbol Parameter Max. Units
Vos Drain-Source Voltage 60 V
ID @ T, = 25°C Continuous Drain Current, Vss © 10V 1.2
ID @ TA = 70°C Continuous Drain Current, Ves @ 10V O.93 A
IDM Pulsed Drain Current 4.8
PD @TA = 25°C Maximum Power Dissipation 1.25 W
Pry @TA = 70°C Maximum Power Dissipation 0.80
Linear Derating Factor 0.01 WPC
l/ss Gate-to-Source Voltage t 16 V
Ts, TSTG Junction and Storage Temperature Range -55 to + 150 "C
Thermal Resistance
Symbol Parameter Typ. Max. Units
ROJA Junction-to-Ambient © - 100 °C/W
ROJA Junction-to-Ambient (t<10s) (E) - 99
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes co through © are on page 10
1
03/09/12
IRLM L2060TRPbF International
TOR Rectifier
Electric Characteristics © To = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 60 -- -- V Vss = 0V, ID = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.06 - V/°C Reference to 25°C, ID = 5.0mA
Roman) Static Drain-to-Source On-Resistance - 356 480 m9 Vss = lov, ID = 1.2A ©
- 475 640 Vas = 4.5V, ID = 0.96A ©
VGS(th) Gate Threshold Voltage 1.0 -- 2.5 V Vros = Vss, ID = 25pA
IDSS Drain-to-Source Leakage Current - - 20 pA Vos = 60V, l/ss = 0V
- - 150 Vos = 60V, Vas = OV, TJ = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Vss = 16V
Gate-to-Source Reverse Leakage - - -100 Vss = -16V
Re Internal Gate Resistance - 7.5 - Q
gfs Forward Transconductance 1.6 - - S Vos = 25V, ID = 1.2A
09 Total Gate Charge -- 0.67 -- ID = 1.2A
Qgs Gate-to-Source Charge - 0.18 - nC Vos = 30V
di Gate-to-Drain ("Miller") Charge - 0.40 - Vas = 4.5V ©
tam) Turn-On Delay Time - 4.9 - VDD = 30V©
t, Rise Time -- 3.8 -- ID = 1.2A
td(off) Turn-Off Delay Time - 3.7 - ns Rs = 6.89
tf Fall Time - 2.8 - Vas = 4.5V
Ciss Input Capacitance - 64 - Vss = 0V
Coss Output Capacitance - 13 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 6.6 - f = 1.0MHz
Source - Drain Ratings and Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 1 2 MOSFET symbol a
(Body Diode) . showing the " B
ISM Pulsed Source Current 4 8 A integral reverse C) /
(Body Diode) C) . p-n junction diode. R
Vso Diode Forward Voltage - - 1.2 V T, = 25°C, ls = 1.2A, Vss = 0V ©
trr Reverse Recovery Time - 14 21 ns T, = 25°C, l/n = 30V, IF=1.3A
l Reverse Recovery Charge - 8.3 12 nC di/dt = 100A/ps ©
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