IRLL024NQ ,55V Single N-Channel HEXFET Power MOSFET in a SOT-223 packageapplications. Power dissipation of 1.0W is possible in a typical surface mountapplication. Availa ..
IRLL024NTR ,55V Single N-Channel HEXFET Power MOSFET in a SOT-223 packagePD - 91895IRLL024N®HEXFET Power MOSFETl Surface MountDl Advanced Process TechnologyV = 55VDSSl Ultr ..
IRLL024NTR ,55V Single N-Channel HEXFET Power MOSFET in a SOT-223 packagePD - 91895IRLL024N®HEXFET Power MOSFETl Surface MountDl Advanced Process TechnologyV = 55VDSSl Ultr ..
IRLL024NTRPBF ,55V Single N-Channel HEXFET Power MOSFET in a SOT-223 packageapplications.The SOT-223 package is designed for surface-mountusing vapor phase, infra red, or wave ..
IRLL024Z ,55V Single N-Channel HEXFET Power MOSFET in a SOT-223 packageapplications.SOT-223Absolute Maximum RatingsParameter Max. Units(Silicon Limited)
IRLL024NQ
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
International
Tart Rectifier AUTOMOTIVE MOSFET
PD-94152
IRLL024NQ
Typical Applications
. Electronic Fuel Injection HEXFET© Power MOSFET
I Active Suspension
I Power Doors, Windows & Seats D
I Cruise Control VDSS = 55V
I Air Bags
Benefits
q Advanced Process Technology A RDS(on) = 0-0659
o Ultra Low On-Resistance G
o 175°C Operating Temperature ID = 3.1A
q Repetitive Avalanche Allowed up to Tjmax S
q Dynamic dv/dt Rating
q Automotive [0101] Qualified
Description
Specifically designed tor Automotive applications, this HEXFET® Power MOSFET
in a SOT-223 package utilizes the Iastest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of this Automotive
qualired HEXFET Power MOSFET are a 175°C junction operating temperature,
fast switching speed and improved repetitive avalanche rating. These benefits
combine to make this design an extremely efficient and reliable device for use in
Automotive applications and a wide variety of other applications.
The efficient SOT-223 package is designed for surface mount and the enlarged tab SOT-223
provides improved thermal characteristics making it ideal in a variety of power
applications. Power dissipation of 1.0W is possible in a typical surface mount
application. Available in Tape & Reel.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ 4.5V 3.1
ID @ Tc = 70°C Continuous Drain Current, VGS @ 4.5V 2.6 A
IDM Pulsed Drain Current (D 12
Po @Tc = 25°C Power Dissipation® 1.3 W
Linear Derating Factor 8.3 mW/°C
VGS Gate-to-Source Voltage i16 V
EAS Single Pulse Avalanche Energy© 87 mJ
IAR Avalanche Current© See Fig.160, 16d, 19, 20 A
EAR Repetitive Avalanche Energy© mJ
dv/dt Peak Diode Recovery dv/dt s 9.9 V/ns
TJ, Tsm Junction and Storage Temperature Range -55 to + 175 ''C
Thermal Resistance
Parameter Typ. Max. Units
ReJA Junction-to-Amb. (PCB Mount, steady state)" 90 120 o C NV
ReJA Junction-to/mb. (PCB Mount, steady state)" 50 60
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
03/16/01
IRLL024NQ International
TO.R Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 - - V VGS = 0V, ID = 250PA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coemcient - 0.057 - V/°C Reference to 25°C, ID = 1mA
RDSm Static Drain-to-Source On-Resistance - - 0.065 mg VGS = 10V, ID = 3.1A ©
- - 0.080 VGs = 5.0V, ID = 2.5A ©
VGS(th) Gate Threshold Voltage 1.0 - 2.0 V Vos = VGS, ID = 250pA
gts Forward Transconductance 4.5 - - S Vos = 25V, lo = 1.9A
loss Drain-to-Source Leakage Current _- _- 22550 pA x3: -] 32v x2: =" g, To = 125°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 16V
Gate-to-Source Reverse Leakage - - -100 I/ss = -16V
% Total Gate Charge - 11 17 ID = 1.9A
Qgs Gate-to-Source Charge - 1.9 - nC Vos = 44V
di Gate-to-Drain ("Miller") Charge - 4.3 - VGS = 10V
tum) Turn-On Delay Time - 12 - VDD = 28V ©
tr Rise Time - 41 - ns ID = 1.9A
tum) Turn-Off Delay Time - 48 - Rs = 249
tr Fall Time - 39 - RD = 159
Ciss Input Capacitance - 508 - I/ss = 0V
Coss Output Capacitance - 141 - pF I/os = 25V
Crss Reverse Transfer Capacitance - 62 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 3.1 showing the
ISM Pulsed Source Current - - 12 integral reverse G
(Body Diode) OD p-n junction diode. s
I/so Diode Forward Voltage - - 1.0 V Tu = 25°C, ls = 1.9A, VGS = 0V ©
trr Reverse Recovery Time - 40 60 ns To = 25''C, IF = 1.9A
Gr Reverse Recovery Charge - 65 97 nC di/dt = 100A/ps ©
Notes:
co Repetitive rating; pulse width limited by CO Starting To = 25°C, L = 18mH
max. junction temperature. Rs = 259, IAS = 3.1A. (See Figure 12).
co ISD S 1.9A, di/dt f 197/Ups, VDD S V(BR)DSSI
© Pulse width S 400ps; duty cycle 3 2%.
. T J 3 175°C
© Surface mounted on 1 In square Cu board
© Limited by TJmax , see Fig.16c, 16d, 19, 20 for typical repetitive
avalanche performance.
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