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IRLIZ44N
55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
PD - 9.1498A
IRLIZ44N
HEXFET® Power MOSFET
International
TOR, Rectifier
o Logic-Level Gate Drive D
0 Advanced Process Technology VDss = 55V
o Isolated Package
o High Voltage Isolation = 2.5KVRMS s af RDS(on) = 0.0220
0 Sink to Lead Creepage Dist. = 4.8mm G “T
o Fully 1valanche Rated ID = 30 A
Description s
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
arewell known for, providesthe designerwith an extremely
efficient and reliable device for use in a wide variety of r
applications. 5'-ti.'f.tii'T.'.C..rr,
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commerciaI-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab TO-220 FULLPAK
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 30
ID @ Tc = 100°C Continuous Drain Current, I/ss @ 10V 22 A
IDM Pulsed Drain Current COO) 160
PD @Tc = 25°C Power Dissipation 45 W
Linear Derating Factor 0.3 W/°C
VGS Gate-to-Source Voltage i 16 V
EAS Single Pulse Avalanche Energy©© 210 m]
IAR Avalanche Current0D© 25 A
EAR Repetitive Avalanche Energy00 4.5 mJ
dv/dt Peak Diode Recovery dv/dt ©© 5.0 V/ns
T: Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw 10 Ibf-in (1 .1N-m)
Thermal Resistance
Parameter Typ. Max. Units
ReJc Junction-to-Case - 3.3 o
RNA Junction-to-Ambient - 65 C/W
8/25/97
lRLIZ44N International
TOR Rectifier
Electrical Characteristics @ TJ = 25''C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 - - V Ves = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. CoefMient - 0.070 - V/°C Reference to 25°C, ID = 1mA©
- - 0.022 VGs = 10V, ID = 17A ©
RDS(on) Static Drain-to-Source On-Resistance - - 0.025 Q VGS = 5.0V, ID = 17A ©
- - 0.035 VGS = 4.0V, ID = 14A GD
Vesah) Gate Threshold Voltage 1.0 - 2.0 V VDS = VGs, ID = 250pA
gts Forward Transconductance 21 - - S Vos = 25V, ID = 25A©
. - - 25 VDS = 55V, VGS = 0V
bss Drain-to-Source Leakage Current - - 250 HA VDS = 44V, VGS = 0V, TJ = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGs = 16V
Gate-to-Source Reverse Leakage - - -100 VGS = -16V
Qg Total Gate Charge - - 48 ID = 25A
Qgs Gate-to-Source Charge - - 8.6 nC Vos = 44V
di Gate-to-Drain ("Miller") Charge - - 25 N/ss = 5.0V, See Fig. 6 and 13 @©
iti(on) Turn-On Delay Time - 11 - VDD = 28V
tr Rise Time - 84 - ns ID = 25A
td(off) Turn-Off Delay Time - 26 - RG = 3.49., N/ss = 5.0V
tf Fall Time 15 RD =1.1Q,See Fig. 10 COO)
. Between lead, D
LD Internal Drain Inductance - 4.5 - 6mm (0.25in.) E
nH from package G )
Ls Internal Source Inductance - 7.5 - .
and center of die contact s
Ciss Input Capacitance - 1700 - I/ss = 0V
Cogs Output Capacitance - 400 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 150 - f = 1.0MHz, See Fig. 56)
C Drain to Sink Capacitance - 12 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 30 MOSFET symbol D
(Body Diode) A showing the R7:
ISM Pulsed Source Current - - 160 integral reverse G (to-a,
(Body Diode) coco p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V To = 25°C, Is = 17A, VGS = 0V co
trr Reverse Recovery Time - 80 120 ns To = 25°C, I]: = 25A
Qrr Reverse RecoveryCharge - 210 320 pC di/dt = 100A/ps @©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (turn-on is dominated by L3+LD)
Notes:
co Repetitive rating; pulse width limited by GD Pulse width S 300ps; duty cycles 2%.
max. junction temperature. ( See Rr 11 )
© VDD = 15V, starting Tu = 25°C, L = 470pH s t=60s, f=60Hz
Rs = 259, IAS = 25A. (See Figure 12)
© Isro 3 25A, di/dt g 270A/ps, VDD g V(BR)ross, © Uses IRLZ44N data and test conditions
T us: 175°C
