IRLIZ24G ,60V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications. The moulding compound used provides a
high isolation capability and a low thermal re ..
IRLIZ24N ,55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageInternational
TOR Rectifier
PRELIMINARY
PD -9.1344A
IRLIZ24N
Logic-Level Gate Drive
..
IRLIZ24N. ,55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications.
The moulding compound used provides a high isolation
capability and a low thermal r ..
IRLIZ34G ,60V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications. The moulding compound used provides a
high isolation capability and a low thermal re ..
IRLIZ34N ,55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications.The moulding compound used provides a high isolationcapability and a low thermal resis ..
IRLIZ44G ,60V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packagePD-9.849
IRLIZ44G
Intetpatipytl
EOR Rectifier
HEXFET+ Power MOSFET
q Isolated Package
..
ISPGDX160VA-5B208 , In-System Programmable 3.3V Generic Digital CrosspointTM
ISPGDX240VA-7B388I , In-System Programmable 3.3V Generic Digital CrosspointTM
ISPLSI1016 , In-System Programmable High Density PLD
ISPLSI1016 , In-System Programmable High Density PLD
ISPLSI1016 , In-System Programmable High Density PLD
ISPLSI1016E-100LJN , In-System Programmable High Density PLD
IRLIZ24G
60V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
PD-9.847
IRLIZZ4G
1rttett'atiip,t'all
EOR Rectifier
HEXFET6 Power MOSFET
o isolated Package
0 High Voltage Isolation: 2.5KVRMS © D V - 60V
0 Sink to Lead Creepage Dist.= 4.8mm DSS -
o Logic-Level Gate Drive
o RDs(on)Specified at VGs=4V & 5V G L " _ RDS(on) = 0.1 on
0 Fast Switching
Ease of Paralleling
S |D=14A
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness. .
The TO-220 Fullpak eliminates the need for additional insulating hardware in
commercial-industrial applications. The moulding compound used provides a
high isolation capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100 micron mica
barrier with standard TO-220 product. The Fullpak is mounted to a heatsink
using a single clip or by a single screw fixing.
Absolute Maximum Ratings
TO-220 FULLPAK
Parameter Max. Units
lo @ Ts = 25°C Continuous Drain Current, l/tss @ 5.0 V 14
in @ To = 100°C 1,Continuous Drain Current, sz @ 5.0 v 10 A
IDM Pulsed Drain Current CI) 56
Po @ To = 25°C Power Dissipation 37 W
Linear Derating Factor 0.24 WPC
l/ss Gate-to-Source Voltage i10 V
EAs Single Pulse Avalanche Energy © 100 ml
dv/dt Peak Diode Recovery dv/dt © 4.5 l V/ns
TJ Operating Junction and -55 to +175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 ibf-in (1.1 N-m)
Thermal Resistance
Parameter Min. T Typ. Max. Units
Rac Junction-to-Case - i - 4.1 °C/W
ReJA Junction-to-Ambient - - 65
|RLIZ24G
Electrical Characteristics tii) Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(BRJDSS Drain-to-Source Breakdown Voltage 60 - - V Vss--0V, Io: 250gA
AV(BH)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.065 - V/°C Reference to 25°C, In: 1mA
Fusion) Static Drain-to-Source On-Resistance - - 0.10 n VGS=5'0V’ b=8.4A ©
- - 0.14 VGS=4.0V, |D=7.OA ©
VGS(th) Gate Threshold Voltage 1 .0 - 2.0 V VDs=VGs, 1:): 250pA
gm Forward Transconductance 7.3 - - S VDS=25V, ID=8.4A (I)
loss Drain-to-Source Leakage Current - - 25 pA Vios--60V, Vss=OV
- - 250 Vmr--48V,Vtss--OV,Tr--150oC
less Gate-to-Source Forward Leakage - - 100 n A Ves=10V
Gate-to-Source Reverse Leakage - - -100 I/Gs-c-ION/
09 Total Gate Charge - - 18 |D=17A
Qgs Gate-to-Source Charge - - _ 4.5 nC Vos=48V
di Gate-to-Drain ("Miller") Charge - - 12 Ves=5.0V See Fig. 6 and 13 ©
tum) Turn-On Delay Time ._..- 11 - VDD=3OV
tr Rise Time ..r.l..- 110 - ns |D=17A
tam) Turn-Off Delay Time - 23 - RG=9.OQ
tf Fall Time - 41 - RD=1.7Q See Figure 10 ©
Ln Internal Drain Inductance - 4.5 - t'htg,ron.lti1nd.') D
nH from package GE
Ls Internal Source Inductance - 7.5 - Ind center of
die contact s
Ciss Input Capacitance - 870 - VGs=0V
Coss Output Capacitance -- 360 - pF Vos= 25V
Crss Reverse Transfer Capacitance - 53 - f=1.0MHz See Figure 5
C Drain to Sink Capacitance -._ 12 - pF f=1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
ls Continuous Source Current - - 14 MOSFET symbol D
(Body Diode) A showing the 1“}:
ISM Pulsed Source Current - - 56 integral reverse G (tr,
(Body Diode) (D p-n junction diode. S
Van Diode Forward Voltage F-- - 1.5 V TJ=25°C, Is=14A, Ves=OV ©
tn Reverse Recovery Time - 130 260 ns TJ=25°C, |F=17A
er Reverse Recovery Charge 'r-.-- 0.75 1.5 p1C di/dt=100A/ws co
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
(IC) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=25V, starting TJ=25°C, L=595pH
RG--25n, |As=14A (See Figure 12)
CC) 150:17A, di/dts140A/ps, VDDSV(BR)DSS,
TJS175°C
co t=60s, f=60Hz
© Pulse width S 300 ps; duty cycle 32%.
