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IRL620
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
IOR Rectifier
PD -9.1217
IRL620
HEXFET© Power MOSFET
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low on-
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Logic-Level Gate Drive
RDS(ON) Specified at VGS = 4V & 5V
Fast Switching
Ease of paralleling
Simple Drive Requirements
VDSS = 200V
RDS(on) = 0.809
ID=5.2A
resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute to its wide acceptance
throughout the industry.
Absolute Maximum Ratings
TO-220AB
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, V GS @ 5.0V 5.2
ID @ Tc = 100°C Continuous Drain Current, V GS @ 5.0V 3.3 A
IDM Pulsed Drain Current (D 21
PD @Tc = 25°C Power Dissipation 50 W
Linear Derating Factor 0.40 W/''C
VGs Gate-to-Source Voltage t10 V
EAS Single Pulse Avalanche Energy © 125 mJ
IAR Avalanche Current OD 5.2 A
EAR Repetitive Avalanche Energy (D 5.0 mJ
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
TJ Operating Junction and -55 to + 150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw. 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Min. Typ. Max. Units
Rsuc Junction-to-Case - - 2.5
Recs Case-to-Sink, Flat, Greased Surface - 0.50 - "CM/
ROJA Junction-to-Ambient - - 62
Revision 0
IRL620 TOR
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 200 - - V VGS = 0V, ID = 250PA
AV(BRpss/ATo Breakdown Voltage Temp. Coefhcient - 0.27 - V/°C Reference to 25°C, ID = 1mA
RDS(ON) Static Drain-ttFS- On-Resistant - - 0.80 n VGS = 5.0V, Io = 3.1A (4C)
- - 1.0 l/ss = 4.0V, ID = 2.6A ®
Vegan) Gate Threshold Voltage 1.0 - 2.0 V Vros = VGs, ID = 250pA
9ts Forward Transconductance 1.2 - - S Vros = 50V, ID = 3.1A
loss DrairFttA%urtzs Leakage Current - - 25 pA VDS = 200V, l/ss = 0V
- - 250 Vros = 160V, VGs = 0V, Tu = 125°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 10V
Gate-to-Source Reverse Leakage - - -100 VGS = -10V
Qg Total Gate Charge - - 16 ID = 5.2A
Qgs Gate-to-Source Charge - - 2.7 nC I/rss = 160V
di Gate-to-Drain ("Miller") Charge - - 9.6 I/ss = 5.0V, See Fig. 6 and 13 ©
td(on) Turn-On Delay Time - 4.2 - ns VDD = 100V
tr Rise Time - 31 - ID = 9.0A
tts(oit) Turn-Off Delay Time - 18 - Rs = 6.09
tr Fall Time - 17 - R9 = 119, See Fig. 10 ©
. Between lead, 0
u, Internal Drain Inductance - 4.5 - nH 6mm (0.25in.)
Ls Internal Source Inductance - 7.5 - 2:310:32] die contact i)
Ciss Input Capacitance - 360 - VGS = 0V
Coss Output Capacitance - 91 - pF Vros = 25V
Crss Reverse Transfer Capacitance - 27 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current MOSFET symbol 7..-“;
. - - 5.2 . A "h,
(Body Diode) A showing the i] Hm
ISM Pulsed Source Current integral reverse 'UP, " 1 7‘.-
(Body Diode) OD - - 21 p-n junction diode. Hg ',
VSD Diode Fowvard Voltage - - 1.8 V To = 25°C, ls = 5.2A, VGS = 0V ©
trr Reverse Recovery Time - 180 270 ns To = 25°C, IF = 5.2A
Qrr Reverse Recovery Charge - 1.1 1.7 pC di/dt = 100/Vps (4)
ton Forward Tum-On Time Intrinsic tumon time is negligible (tum-on is dominated by L S+LD)
Notes:
co Repetitive rating; pulse width limited by (3 'SDS 5.2A, di/dt s: 120A/ps, VDDS V(BR)DSSv
max. junction temperature. (See fig. 11 ) T J f 150°C
© VDD = 50V, starting To = 25°C, L = 6.9mH © Pulse width S 300ps; duty cycle 5 2%.
Rs = 259, lAs = 5.2A. (See Figure 12)
