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IRL540
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Mtternational
TOR Rectifier
PD-9.563C
IRL540
HEXFET6 Power MOSFET
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Logic-Level Gate Drive
RDs(on)Specified at VGs=4V & 5V
175°C Operating Temperature
Fast Switching
Ease of Paralleling
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the T0220 contribute to its wide
acceptance throughout the industry.
s ID = 28A
RDS(on) = 0.0779
TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
ID © Tc = 25°C Continuous Drain Current, Ves @ 5.0 V 28
lo © Tc =100°C Continuous Drain Current, VGs @ 5.0 V 20 A
lou Pulsed Drain Current C) 110
PD © Tc = 25°C Power Dissipation 150 W
Linear Derating Factor 1.0 WPC
Ves Gate-to-Source Voltage :10 V
EAS Single Pulse Avalanche Energy (2) 440 mJ
IAR Avalanche Current (i) 28 A
EAR Repetitive Avalanche Energy C) 15 mJ
dv/dt Peak Diode Recovery dv/dt Cj) 5.5 V/ns
Tu Operating Junction and -55 to +175
Tsrs Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 lbf-in (1.1 Nun)
Thermal Resistance
Parameter Min. Typ. Max. Units
Rac Junction-to-Case - - 1 .0
Recs Case-to-Sink, Flat, Greased Surface - 0.50 - DC/W
RHJA Junction-to-Ambient - - 62
1RLS4.0
Electrical Characteristics © TJ = 25°C (unless otherwise specified)
:llir.hit
Parameter Min. Typ. Max. Units Test Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 - - V Ves=OV, ID: 250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.12 - 1//oC Reference to 25°C, ID: 1mA
Rns(on) Static Drain-to-Source On-Resistance - - 0.077 n 1/tas=5.0V, Io=17A C4)
- - 0.11 VGs=4.0V, b--14A ©
Vegan) Gate Threshold Voltage 1.0 - 2.0 V VDs=VGs, ID: 250VA
gs Forward Transconductance 12 - - S VDs=5OV, |D=17A ©
loss Drain-to-Source Leakage Current - - 25 uA VDS=1OOV’ l/ss-HN
- - 250 Vos=80V, Vss---01/, TJ=150°C
less Gate-to-Source Forward Leakage - -.... 100 n A VGs=10V
Gate-to-Source Reverse Leakage - - -100 VGs=-1OV
ch Total Gate Charge - - 64 lo=28A
Qgs Gate-to-Source Charge - - 9.4 nC VDS=80V
di Gate-to-Drain ("Miller") Charge - - 27 Ves=5.0V See Fig. 6 and 13 ©
Hon) Turn-On Delay Time - 8.5 - 1hoo--50V
tr Rise Time - 170 - ns Io=28A
td(off) Turn-Off Delay Time - 35 - Rs--.9.0f2
t, Fall Time - 80 - RD=1.7Q See Figure 10 C4)
LD Internal Drain Inductance - 4.5 - titl1Tn.irnd.') t)
nH from package GE )
Ls Internal Source Inductance - 7.5 - Ind center of
die contact s
Ciss Input Capacitance - 2200 - VGs=0V
Coss Output Capacitance -.-e 560 - pF VDs=25V
Crss Reverse Transfer Capacitance - 140 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
Is Continuous Source Current - - 28 MOSFET symbol D
(Body Diode) A showing the (ro-j)
ISM Pulsed Source Current - - 1 10 integral reverge G Il
(Body Diode) co p-n junction diode. s
Vso Diode Forward Voltage - 2. 2.5 V TJ=25°C, 15:28A, Vas--0V CO
tr, Reverse Recovery Time - 200 260 ns TJ=25°C, ir=28A
er Reverse Recovery Charge - 1.7 2.9 PC di/dt=100Atis ©
ton Forward Turn-On Time Intrinsic turn-on time is negiegible (turn-on is dominated by Ls+LD)
Notes:
Ci) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=25V, starting TJ=25°C, L=841uH
Re=25§2, |As=28A (See Figure 12)
TJS175°C
© Isos28A, di/de170/Urcs, VDD$V(BR)DSS,
© Pulse width S 300 vs; duty cycle C2%.
