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bsolute Maximum Ratings
Parameter Max. Units
ID tp To = 25''C Contin ..
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IRL520N
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
PD - 91494A
International
Tart, Rectifier IRL520N
HEXFET® Power MOSFET
Logic-Level Gate Drive D
Advanced Process Technology VDSS = 100V
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching G
0 Fully Avalanche Rated
Description s
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
A RDS(on) = 0.189
ID =1OA
The TO-220 package is universally preferred for all
commerciaI-industrial applications at powerdissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 TO-220AB
contribute to its wide acceptance throughout the
industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V 10
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V 7.1 A
IDM Pulsed Drain Current C) 35
Pro @Tc = 25°C Power Dissipation 48 W
Linear Derating Factor 0.32 W/''C
VGS Gate-to-Source Voltage i 16 V
EAs Single Pulse Avalanche Energy© 85 mJ
IAR Avalanche Current0) 6.0 A
EAR Repetitive Avalanche Energy(0 4.8 mJ
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °c
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew IO Ibf-in (1.1Nom)
Thermal Resistance
Parameter Typ. Max. Units
ReJc Junction-to-Case - 3.1
Recs Case-to-Sink, Flat, Greased Surface 0.50 - "C/W
ReJA Junction-to-Ambient - 62
5/13/98
IRL520N
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 - - V VGS = 0V, ID = 250pA
AV
- - 0.18 l/ss =10V,ID = 6.0A ©
Rrosom Static Drain-to-Source On-Resistance - - 0.22 Q Ves = 5.0V, ID = 6.0A ©
- - 0.26 VGS = 4.0V, ID = 5.0A ©
VGsah) Gate Threshold Voltage 1.0 - 2.0 V Ws = VGs, ID = 250pA
9ts Forward Transconductance 3.1 - - S Vros = 25V, ID = 6.0A
loss Drain-to-Source Leakage Current T, T, Ji, PA VS: =" 1t(//)tt,',C),, = 150°C
less Gate-to-Source Forward Leakage - - 100 n A l/ss = 16V
Gate-to-Source Reverse Leakage - - -100 VGS = -16V
09 Total Gate Charge - - 20 ID = 6.0A
Qgs Gate-to-Source Charge - - 4.6 no Vros = 80V
di Gate-to-Drain ("Miller") Charge - - IO Vss = 5.0V, See Fig. 6 and 13 ©
tdmn) Turn-On Delay Time - 4.0 _-.- VDD = 50V
tr Rise Time - 35 - ns ID = 6.0A
td(off) Turn-Off Delay Time - 23 - Rs = 119, VGS = 5.0V
tr Fall Time 22 R9 = 8.29, See Fig. 10 ©
. Between lead, D
u, Internal Drain Inductance - 4.5 - nH 6mm (0.25in.) E )
Ls Intemal Source Inductance - 7.5 --.- from package . G _
and center of die contact s
Ciss Input Capacitance - 440 - Was = 0V
Coss Output Capacitance - 97 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 50 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current _ - 10 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) Coco - - 35 p-n junction diode. s
I/so Diode Forward Voltage - - 1.3 V TJ = 25°C, Is = 6.OA, I/ss = 0V ©
tn Reverse Recovery Time - 110 160 ns To = 25°C, IF =6.0A
G, Reverse RecoveryCharge - 410 620 nC di/dt = 100Alps co
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by Ls+Lo)
Notes:
C) Repetitive rating; pulse width limited by © Iso g 6.0A, di/dt g 340Alps, VDD g V(BR)Dss.
max. junction temperature. (See fig. 11 ) TJs 175°C
© Starting Tu = 25°C, L = 4.7mH
Rs-- 259, IAS-- 6.0A. (See Figure 12)
© Pulse width s: 300ps; duty cycle I 2%.
