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IRL3803IORN/a30avai30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
IRL3803. |IRL3803IRN/a6avai30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
IRL3803PBFIRN/a12000avai30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package


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IRL3803-IRL3803.-IRL3803PBF
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
:rartR3ctifier
Logic-Level Gate Drive
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efhcient
device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
PD - 91301D
IRL3803
HEXFET® Power MOSFET
VDSS = 30V
rn, RDS(on) = 0.006n
ID = 140AS
levels to approximately 50 watts. The lowthermal resistance TO-220AB
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V 140©
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V 986) A
IDM Pulsed Drain Current (D 470
Pro @Tc = 25°C Power Dissipation 200 W
Linear Derating Factor 1.3 W/°C
VGs Gate-to-Source Voltage 116 V
EAS Single Pulse Avalanche Energy © 610 mJ
IAR Avalanche Currentc0 71 A
EAR Repetitive Avalanche Energy© 20 mJ
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw. 10 Ibf-in (1 Atom)
Thermal Resistance
Parameter Min. Typ. Max. Units
ReJC Junction-to-Case - - 0.75
Recs Case-to-Sink, Flat, Greased Surface - 0.50 - °C/W
ReJA Junction-to-Ambient —— - 62
1/5/04
IRL3803 International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 - - V VGS = 0V, ID = 250pA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coefhcient - 0.052 - W''C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance : : 3-83: n V2: ; 4'f/,(,/y-dt(l,,'
VGS(th) Gate Threshold Voltage 1.0 - - V Vos = VGs, ID = 250pA
grs Forward Transconductance 55 - - S Vros = 25V, ID = 71A
loss Drain-to-Source Leakage Current - - 25 pA Vros = 30V, VGS = 0V
- - 250 Vos = 24V, Ves = 0V, To = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 16V
Gate-to-Source Reverse Leakage - - -100 VGS = -16V
% Total Gate Charge - - 140 ID = 71A
Qgs Gate-to-Source Charge - - 41 nC Ws = 24V
di Gate-to-Drain ("Miller") Charge - - 78 Vss = 4.5V, See Fig. 6 and 13 ©
td(on) Turn-On Delay Time - 14 - VDD = 15V
tr Rise Time - 230 - I ns ID = 71A
td(oit) Turn-Off Delay Time - 29 - l Rs = 1.39, VGS = 4.5V
tf Fall Time - 35 - Ro = 0.209, See Fig. 10 ©
u, Internal Drain Inductance - 4.5 - tl,',)',,")',."):':,'' E D
nH G )
from package
Ls Internal Source Inductance - 7.5 - .
and center of die contact s
Ciss Input Capacitance - 5000 - VGs = 0V
Cogs Output Capacitance - 1800 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 880 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
. _ - - 140S
(Body Diode) A snowmg the
ISM Pulsed Source Current . - - 470 integral reverse G
(Body Diode) (D p-n junction diode. s
I/sro Diode Forward Voltage - - 1.3 V To = 25°C, Is = 71A, VGS = 0V G)
trr Reverse Recovery Time - 120 180 ns TJ = 25''C, IF = 71A
Qrr Reverse RecoveryCharge - 450 680 nC di/dt = 100Alps GD
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by G) Pulse width f 300ps; duty cycle S 2%.
max. junction temperature. ( See Fig. 11 )
© VDD = 15V, starting TJ = 25°C, L = 180pH s Caculated continuous current based on maximum allowable
Rs = 25Q, 'As = 71A. (See Figure 12) junction temperature;for recommended current-handling of the
© Iso f TIA, di/dt S BONUS V00 s: V(BR)DSSv package refer to Design Tip # 93-4
TJS 175°C
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