IRL3202S ,20V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications becauseof its low internal connection resistance and can2dissipate up to 2.0W in a typ ..
IRL3215 ,150V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipation levels to approximately 50 watts. The lowthermal resistance and ..
IRL3215PBF ,150V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipation levels to approximately 50 watts. The lowthermal resistance and ..
IRL3302 ,20V Single N-Channel HEXFET Power MOSFET in a TO-220AB packagePD 9.1696AIRL3302PRELIMINARY®HEXFET Power MOSFETl Advanced Process TechnologyDl Optimized for 4.5V ..
IRL3302S ,20V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications because2D Pakof its low internal connection resistance and candissipate up to 2.0W in ..
IRL3303 ,30V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipationlevels to approximately 50 watts. The low thermal resistanceTO-22 ..
ISP321-1 , HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS
ISP321-1 , HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS
ISP521-4 , HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS
ISP742RI , Smart Power High-Side-Switch for Industrial Applications
ISP742RI , Smart Power High-Side-Switch for Industrial Applications
ISP752R , Smart Power High-Side-Switch for Industrial Applications
IRL3202S
20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
PD 9.1675B
IRL3202S
International
ISER Rectifier
PRELIMINARY
HEXFET® Power MOSFET
o Advanced Process Technology
o Surface Mount D V - 20V
o Optimized for 4.5v-7.ov Gate Drive DSS
o Ideal for CPU Core DC-DC Converters R - O 016W
o Fast Switching G DS(on) - .
Description ID = 48A
These HEXFET Power MOSFETs were designed S
specifically to meet the demands of CPU core DC-DC
converters in the PC environment. Advanced
processing techniques combined with an optimized
gate oxide design results in a die sized specifically to
offer maximum efficiency at minimum cost.
The D2Pak is a surface mount power package capable
of accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because
of its low internal connection resistance and can
dissipate up to 2.0W in a typical surface mount
application.
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, VGS @ 4.5VCO 48
ID @ To = 100°C Continuous Drain Current, VGS @ 4.5VS 30 A
IDM Pulsed Drain Current cos 190
PD @Tc = 25°C Power Dissipation 69 W
Linear Derating Factor 0.56 W/°C
VGS Gate-to-Source Voltage i 10 V
VGSM Gate-to-Source Voltage 14 V
(Start Up Transient, tp = 100ps)
fis Single Pulse Avalanche Energy©6) 270 ntl
IAR Avalanche CurrentCD 29 A
EAR Repetitive Avalanche Energy0) 6.9 ml
dv/dt Peak Diode Recovery dv/dt ©6) 5.0 V/ns
Tu Operating Junction and -55 to + 150
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
Ric Junction-to-Case - 1.8
RVA Junction-to-Ambient ( PCB Mounted,steady-state)** - 40 °CNV
11/18/97
IRL.3202S International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 20 - - V N/ss = 0V, ID = 250pA
DV(BR)Dss/DTJ Breakdown Voltage Temp. CoefMient - 0.029 - V/°C Reference to 25°C, ID = ImA6)
. . . - - 0.019 VGS = 4.5V, ID = 29A (4)
RDS(on) Static Drain-to-Source On-Resistance - - 0.016 W VGS = 7.0V, ID = 29 A CO
VGS(th) Gate Threshold Voltage 0.70 - - V 1hos = VGS, ID = 250pA
gm Forward Transconductance 28 - - S Vos = 16V, lo = 29AS
loss Drain-to-Source Leakage Current - - 25 PA Vros = 20V, I/ss = 0V
- - 250 VDS = 10V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage - - 100 VGs = 10V
IGSS Gate-to-Source Reverse Leakage - - -100 nA VGS = -10V
ck, Total Gate Charge - - 43 ID = 29A
Q95 Gate-to-Source Charge - - 12 nC Vos = 16V
di Gate-to-Drain ("Miller") Charge - - 13 I/ss = 4.5V, See Fig. 6 cos
td(on) Turn-On Delay Time - 9.8 - VDD = 10V
tr Rise Time - 100 - ns ID = 29A
td(ott) Turn-Off Delay Time - 63 - RG = 9.5W, I/ss = 4.5V
tf FallTime - 82 - Ro = 0.3W, (406)
Between lead,
LS Internal Source Inductance - 7.5 - nH .
and center of die contact
Ciss Input Capacitance - 2000 - VGs = 0V
Cogs Output Capacitance - 800 - pF Vos = 15V
Crss Reverse Transfer Capacitance -- 290 -- f = 1.0MHz, See Fig. 5(S)
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current 48 MOSFETsymbol D
(Body Diode) - - A showing the if
ISM Pulsed Source Current 190 integral reverse G fl
(Body Diode) cos - - p-n junction diode. s
I/sro Diode Forward Voltage - - 1.3 V T: = 25°C, Is = 29A, I/ss = 0V ©
trr Reverse Recovery Time - 68 100 ns Tu = 25°C, IF = 29A
er Reverse Recovery Charge - 130 190 nC di/dt = 100A/ps @(5)
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
C) Repet.itive rating; pulse width limited by C3) ED E 29A, di/dt 2 63A/ps, VDD f V(BR)DSS»
max. junction temperature. T J 2 150°C
© Starting Tu = 25°C, L = 0.64mH co Pulse width f 300ps; duty cycle E 2%.
RG = 25W , IAS = 29A.
s Uses IRL3202 data and test conditions
** When mounted on FR-4 board using minimum recommended footprint.
For recommended footprint and soldering techniques refer to application note #AN-994.
