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IRL3103STRLPBF-IRL3103STRRPBF
30V Single N-Channel HEXFET Power MOSFET in a TO-262 package
International
TOR Rectifier
Advanced Process Technology
Surface Mount (IRL3103S)
Low-profile through-hole (IRL3103L)
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free
Description
Advanced HEXFETO Power MOSFETs from International
Rectifier utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
This benefit, combined with the fastswitching speed and
ruggedized device design that H EXFET power MOSFETs
are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide
variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
PD - 95150
lRL3103SPbF
lRL3103LPbF
HEXFET© Power MOSFET
VDSS = 30V
A RDS(on) = 12mf2
ID = 64A
D2Pak is suitable for high current applications because of its D2Pak TO-262
low internal connection resistance and can dissipate up to IRL3103S IRL3103L
2.0W in a typical surface mount application.
The through-hole version (IRL3103L) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, Vas @ 10V 64
ID © To = 100°C Continuous Drain Current, l/ss © 10V 45 A
IDM Pulsed Drain Current OD 220
PD @Tc = 25°C Power Dissipation 94 W
Linear Derating Factor 0.63 W/°C
Ves Gate-to-Source Voltage t 16 V
IAR Avalanche CurrentCD 34 A
EAR Repetitive Avalanche Energy00 22 mJ
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTS Storage Temperature Range 'C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew IO Ibf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 1 .6 o
ReJA Junction-to-Ambient (PCB mount)" - 40 C/W
1
04/1 9/04
IRL3103S/LPbF
International
TOR Rectifier
Electrical Characteristics © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(Bmpss Drain-to-Source Breakdown Voltage 30 - - V Vss = 0V, ID = 250pA
AV(BR)DSs/ATJ Breakdown Voltage Temp. Coefficient - 0.028 - V/°C Reference to 25°C, ID = 1mA
. . . - - 12 Vss--10V,L=34A ©
Roam) Static Drain-to-Source On-Resistance - - 16 mn Vss = 4.5V, ID = 28A ©
Vesuh) Gate Threshold Voltage 1.0 - - V Vos = Vss, ID = 250pA
gfs Forward Transconductance 22 - - S Vos = 25V, ID = 34A©
loss Drain-to-Source Leakage Current _- _- 22550 pA V: , ::x V: =" 8:: To = 150°C
Gate-to-Source Forward Leakage - - 100 Vss = 16V
lass Gate-to-Source Reverse Leakage - - -100 nA Vss = -16V
% Total Gate Charge - - 33 ID = 34A
095 Gate-to-Source Charge - - 5.9 no Vos = 24V
di Gate-to-Drain ("Miller") Charge - - 17 Vas = 4.5V, See Fig. 6 and 13
tdwn) Turn-On Delay Time - 8.9 - VDD = 15V
t, Rise Time - 120 - ID = 34A
td(off) Turn-Off Delay Time - 14 - Rs = 1.89
tf Fall Time - 9.1 - Vss = 4.5V, See Fig. 10 ©
Lo Internal Drain Inductance - 4.5 - Between Isad, D
6mm (0.25in.)
nH from package GE )
Ls Internal Source Inductance - 7.5 - and center of die contact s
Ciss Input Capacitance - 1650 - VGS = 0V
Cogs Output Capacitance - 650 - VDs = 25V
Crss Reverse Transfer Capacitance - 110 - pF f = 1.0MHz, See Fig. 5
EAS Single Pulse Avalanche Energy© - 1320C2130© mJ IAS = 34A, L = 0.22mH
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 64 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 220 integral reverse G
(Body Diode)© p-n junction diode. s
VSD Diode Forward Voltage - - 1.2 V TJ = 25°C, Is = 34A, Vas = 0V ©
trr Reverse Recovery Time - 57 86 ns TJ = 25°C, IF = 34A
G, Reverse Recovery Charge - 110 170 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
© Starting T, = 25°C, L = 220pH
Ra = 259, [AS = 34A, Vas=10V (See Figure 12)
Cs) ISD S 34A, di/dt S 120A/ps, VDD S V(BH)DSS!
T J 3 175°C
GD Pulse width S 400ps; duty cycle S 2%.
s This is a typical value at device destruction and represents
operation outside rated limits.
© This is a calculated value limited to T, = 175°C .
"When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniques refer to
application note #AN-994
