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IRL2910S-IRL2910STRL
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package
International
PD - 91376C
TOR Rectifier IFC29'10S/L
HEXFET© Power MOSFET
o Logic-Level Gate Drive
0 Surface Mount D
q Advanced Process Technology VDSS - 100V
0 Ultra Low On-Resistance
o Dynamic dv/dt Rating A RDS(on) = 00259
0 Fast Switching
0 Fully Avalanche Rated ID = 55A
Description s
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that H EXFET Power MOSFETs
are well known for, providesthe designerwith an extremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on- D2Pak TO-262
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0W in a typical surface mount application.
The through-hole version (IRL2910L) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V© 55
ID @ To = 100°C Continuous Drain Current, VGs @ 10V© 39 A
IDM Pulsed Drain Current (D6) 190
Pro @TA = 25''C Power Dissipation 3.8 W
Pro ttTc = 25°C Power Dissipation 200 W
Linear Derating Factor 1.3 W/°C
Vss Gate-to-Source Voltage 1 16 V
EAS Single Pulse Avalanche EnergyOS 520 mJ
IAR Avalanche Currents 29 A
EAR Repetitive Avalanche Energy© 20 mJ
dv/dt Peak Diode Recovery dv/dt @C0 5.0 V/ns
Tu Operating Junction and -55 to + 175
Tsms Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
Rouc Junction-to-Case - 0.75 "CIW
RQJA Junction-to-Ambient ( PCB Mounted,steady-state)** - 40
10/09/03
IRL29'10S/L International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 - - V VGs = 0V, ID = 250PA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.12 - 1//''C Reference to 25''C, ID = 1mA©
- - 0.026 Vss = 10V, ID = 29A ©
Ros(on) Static Drain-to-Source On-Resistance - - 0.030 g VCs = 5.0V, ko = 29A ©
- - 0.040 VGs = 4.0V, ID = 24A (9
VGsm Gate Threshold Voltage 1 .0 - 2.0 V Vos = VGS, In = 250pA
gfs Forward Transconductance 28 - - S Vos = 50V, ID = 29A©
. - - 25 Vos = 100V, VGS = 0V
loss Drain-to-Source Leakage Current - - 250 HA Vos = 80V, Ves = 0V, Tu = 150°C
less Gate-to-Source Forward Leakage - - 100 nA Vss = 16V
Gate-to-Source Reverse Leakage - - -100 VGs = -16V
% Total Gate Charge - - 140 ID = 29A
Qgs Gate-to-Source Charge - - 20 nC I/ns = 80V
di Gate-to-Drain ("Miller") Charge - - 81 V65 = 5.0V, See Fig. 6 and 13 ©©
td(on) Turn-On Delay Time - 1 1 - Voc, = 50V
t, Rise Time - 100 - ns ID = 29A
td(ott) Turn-Off Delay Time - 49 - Rs = 1.49, Vss = 5.0V
tf Fall Time 55 Rn = 1.79, See Fig. 10 ©S
LS Internal Source Inductance - 7.5 - Between lead,
nH and center of die contact
Ciss Input Capacitance - 3700 - I/ss = ov
Cass Output Capacitance - 630 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 330 - f = 1.0MHz, See Fig. 5©
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current MOSFET symbol D
(Body Diode) - - 55 A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) OS - _ 190 p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V Tu = 25°C, ls = 29A, Ves = 0V (0
trr Reverse Recovery Time - 240 350 ns Tu = 25°C, I; = 29A
Qrr Reverse RecoveryCharge - 1.8 2.7 pC di/dt = 1OOA/ps © s
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
OD Repetitive rating; pulse width limited by © Pulse width g 300ps; duty cycle 3 2%.
max. junction temperature. ( See fig. 11 )
© VDD = 25V, starting Tu = 25°C, L = 1.2mH s Uses IRL2910 data and test conditions
Rs = 259, IAS-- 29A. (See Figure 12)
© ISD S 29A, di/dt s 490A/ps, Von s V(BR)DSSr
T JS 175°C
** When mounted on 1" square PCB ( FR-4 or G-1O Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
