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IRL2203STRR
30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
PRELIMINARY PD 9.1091A
International
ISZR Rectifier IRL2203S
H EXFET© Power MOSFET
o Logic-Level Gate Drive D VDSS = 30V
o Surface Mount
o Advanced Process Technology _ =
o Dynamic dv/dt Rating G "n A Rroson) 0.007Q
0 175°C Operating Temperature -
0 Fast Switching ID - 100AS
o Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on- D2Pak
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, VGS @ 10V© 100S
b @ To = 100°C Continuous Drain Current, VGS @ 10V© 71 A
IDM Pulsed Drain Current C06D 400
PD @TA = 25°C PowerDissipation 3.8 W
PD @Tc = 25°C PowerDissipation 130 W
Linear Derating Factor 0.83 W/°C
VGS Gate-to-Source Voltage i 20 V
EAS Single Pulse Avalanche Energy©© 390 m]
IAR Avalanche Current0) 60 A
EAR Repetitive Avalanche Energy© 13 mJ
dv/dt Peak Diode Recovery du/dt©© 1.2 V/ns
T J Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 1.2 o
RNA Junction-to-Ambient ( PCB Mounted/steady-state)" - 40 C/W
IRL2203S
International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 - - V VGS = 0V, ID = 250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefrcient - 0.035 - V/°C Reference to 25°C, ID = 1mA©
. . . -.-.- -.-.- 0.007 VGS = 10V, ID = 60A GD
Rosm Static Drain-to-Source On-Resistance - - 0.01 VGS = 4.5V, ID = 50A co
VGS(th) Gate Threshold Voltage 1.0 - 2.5 V VDs = VGs, ID = 250pA
gig Forward Transconductance 47 - - S l/os = 25V, ID = 60A©
bss Drain-to-Source Leakage Current : : 22550 pA I: =" 'lt,' V: =" g, Tu = 150°C
Gate-to-Source Forward Leakage - - 100 VGS = 20V
IGSS Gate-to-Source Reverse Leakage - - -100 nA VGS = -20V
Qg Total Gate Charge - - 110 ID = 60A
Qgs Gate-to-Source Charge - - 31 n0 Vos = 24V
di Gate-to-Drain ("Miller") Charge - - 57 l/ss = 4.5V, See Fig. 6 and 13 COO)
tam) Turn-On Delay Time - 15 - VDD = 15V
tr Rise Time --.- 210 --.- ns ID = 60A
td(off) Turn-Off Delay Time - 29 - Rs = 1.89, VGS = 4.5V
tf Fall Time - 54 - RD = 0.250, See Fig. 10 COO)
Ls Internal Source Inductance - 7.5 - nH Between lead,
and center of die contact
Ciss Input Capacitance 3500 l/ss = 0V
Cass Output Capacitance - 1400 - pF VDs = 25V
Crss Reverse Transfer Capacitance - 690 - f = 1.0MHz, See Fig. 5(6)
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
. - - 1006) . _
(Body Diode) A showing the ar
ISM Pulsed Source Current - - 400 integral r-evers_e G E
(Body Diode) C) p-n junction diode. s
VSD Diode ForwardVoltage - - 1.3 V To = 25°C, Is = 60A, I/ss = 0V ©
trr Reverse RecoveryTime - 94 140 ns To = 25°C, IF = 60A
Qrr Reverse RecoveryCharge - 280 410 nC di/dt = 100A/us @©
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© VDD = 15V, starting TJ = 25°C, L = 220pH
R6 = 259, 'As = 60A. (See Figure 12)
© ISD 3 60A, di/dt s 140A/ps, vDDs V(BR)Dss,
TJs175°C
© Pulse width 3 300ps; duty cycle S: 2%.
G) Calculated continuous current based on maximum allowable
junction temperature; for recommended current-handling of the
package refer to Design Tip # 93-4
© Uses IRL2203N data and test conditions.
** When mounted on FR-4 board using minimum recommended footprint.
For recommended footprint and soldering techniques refer to application note #AN-994.
