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IRL1404ZSIRN/a4800avai40V Single N-Channel HEXFET Power MOSFET in a D2Pak package


IRL1404ZS ,40V Single N-Channel HEXFET Power MOSFET in a D2Pak packageapplications.IRL1404Z IRL1404ZS IRL1404ZLAbsolute Maximum RatingsParameter Max. UnitsI @ T = 25°C 2 ..
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IRL1404ZS
40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
TOR 'Uctifier
Features
q Logic Level
Advanced Process Technology
AUTOMOTIVE MOSFET
PD - 94804B
IRL1404Z
IRL1404ZS
|RL1404ZL
HEXFET® Power MOSFET
q Ultra Low On-Resistance
. 175°C Operating Temperature
. Fast Switching
o Repetitive Avalanche Allowed up to Tjmax
Description
Specifically designed for Automotive applications,
this HEXFET®
processing techniques to achieve extremely low
on-resistance persilicon area. Additional features ,. iii
of this design
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient and
reliable device
VDSS = 40V
RDS(on) = 3.1mS2
i0 = 75A
Power MOSFET utilizes the latest
are a 175°C junction operating
for use in Automotive applications
s:gji,')ti
ksi,itt
TO-220AB D2Pak TO-262
and a wide variety of other applications. IRL1404Z IRL1404ZS IRL1404ZL
Absolute Maximum Ratings
Parameter Max. Units
'0 @ To = 25°C Continuous Drain Current, VGS © 10V (Silicon Limited) 200
ID @ To = 100°C Continuous Drain Current, Vss @ 10V 140 A
ID @ To = 25°C Continuous Drain Current, Vas © 10V (Package Limited) 75
IBM Pulsed Drain Current CD 790
PD @Tc = 25°C Power Dissipation 230 W
Linear Derating Factor 1.5 W/°C
VGS Gate-to-Source Voltage t 16 V
EAS(Thermallylimi1ed) Single Pulse Avalanche Energy© 220 mJ
EAS (Tested ) Single Pulse Avalanche Energy Tested Value © 490
'AR Avalanche Current co See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy S mJ
Tu Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting Torque, 6-32 or M3 screw 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
ROJC Junction-to-Case - 0.65 "C/W
Rocs Case-to-Sink, Flat, Greased Surface © 0.50 -
ROJA Junction-to-Ambient © -- 62
ROJA Junction-to-Ambient (PCB Mount) - 40


6/1/04
IRL1404Z/S/L
International
TOR Rectifier
Electrical Characteristics © T, = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 40 - - V Vss = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient -- 0.034 -- VPC Reference to 25°C, lo = 1mA
__- 2.5 3.1 Vss=10V, ID=75A co
RDS(on) Static Drain-to-Source On-Resistance - - 4.7 m12 Vss = 5.0V, ID = 40A ©
- - 5.9 Vss = 4.5V, ID = 40A ©
VGS(th) Gate Threshold Voltage 1.4 - 2.7 V Ws = Veg, ID = 250pA
gfs Forward Transconductance 120 - - S VDS = 10V, ID = 75A
loss Drain-to-Source Leakage Current - - 2O pA Vos = 40V, Vas = 0V
- - 250 Vos = 40V, Vas = 0V, T, = 125°C
less Gate-to-Source Forward Leakage - - 200 nA I/ss = 16V
Gate-to-Source Reverse Leakage - - -200 Ves = -16V
Qg Total Gate Charge - 75 110 ID = 75A
Qgs Gate-to-Source Charge - 28 - nC Vos = 32V
di Gate-to-Drain ("Miller") Charge --.- 40 - Vss = 5.0V oo
tum) Turn-On Delay Time -- 19 -- VDD = 20V
tr Rise Time -- 180 -- ID = 75A
tam) Turn-Off Delay Time - 30 - ns Rs = 4.0Q
t, Fall Time - 49 - Vss = 5.0V ©
LD Internal Drain Inductance - 4.5 - Between lead,
nH 6mm (0.25in.)
Ls Internal Source Inductance - 7.5 - from package
and center of die contact
Ciss Input Capacitance - 5080 - Vas = 0V
Coss Output Capacitance - 970 - I/os = 25V
Crss Reverse Transfer Capacitance - 570 - pF f = 1.0MHz
Coss Output Capacitance - 3310 - Vss = 0V, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance -- 870 -- Vas = OV, Vos = 32V, f = 1.0MHz
Coss eff. Effective Output Capacitance -- 1280 -- Vss = 0V, Vos = 0V to 32V ©
Source-Dram Ratings and Characteristics
Parameter Min Typ. Max. Units Conditions
Is Continuous Source Current - - 180 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 720 integral reverse G
(Body Diode) OD p-n junction diode. S
VSD Diode Forward Voltage - - 1.3 V Tu = 25°C, IS = 75A, Vas = 0V ©
tr, Reverse Recovery Time - 26 39 ns TJ = 25°C, IF = 75A, l/oo = 20V
Qrr Reverse Recovery Charge - 18 27 n0 di/dt = 100A/ps co
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
C) Limited by TJmax, starting TJ = 25°C,
L = 0.079mH, Rs = 259, IAS = 75A, Vas =1OV.
Part not recommended for use above this value.
© Pulse width
co Coss eff. is a fixed capacitance that gives the same
charging tim
80% VDSS .
S 1.0ms; duty cycle f 2%.
e as Coss while Vos is rising from 0 to

© Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical
repetitive avalanche performance.
© This value determined from sample failure population. 100%
tested to this value in production.
© This is only applied to TO-22OAB package.
When mounted on I" square PCB (FR-4 or G-1O Material).
For recommended footprint and soldering techniques
refer to application note #AN-994.

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