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IRKU91/12A-IRKV91/12A
400V 75A Center-Tap Common Anode Phase Control Thyristor/Thyristor in a ADD-A-Pak (GEN I) package
Bulletin |27135 rev.F 10/02
International
ISZR Rectifier |RKUN71, 91 SERIES
THYRISTORI THYRISTOR ADD-A-pakTM GEN V Power Modules
Features Benefits
ll High Voltage II Up to 1600V
ll Industrial Standard Package ll Full compatible TO-240AA 75 A
ll Thick AI metal die and double stick bonding ll High Surge capability 95 A
ll Thick copper baseplate D Easy Mounting on heatsink
[1 UL E78996 approved El AI203 DBC insulator
ll 3500VRMsisolating voltage II Heatsink grounded
Mechanical Description
The Generation V of Add-A-pak module combine the Theelectricalterminalsaresecured againstaxialpulI-out:
excellentthermal performance obtained by the usage of they are fixed to the module housing via a click-stop
Direct Bonded Copper substrate with superior feature already tested and proved as reliable on other IR
mechanical ruggedness, thanks to the insertion ofa solid modules.
Copper baseplate at the bottom side of the device.
The Cu baseplate allow an easier mounting on the . . .
majority of heatsink with increased tolerance of surface Electrical Description
roughness and improve thermal spread. These modules are intended for general purpose high
The Generation V of AAP module is manufactured voltage applications such as high voltageregulated power
without hard mold, eliminating in this way any possible supplies, lighting circuits, temperature and motor speed
direct stress on the leads. control circuits, UPS and battery charger.
Major Ratings and Characteristics
Parameters |RKUN71 IRKU/V91 Units
IT(AV)@85°C 75 95 A
IHRMS) 115 150 A
ITSM @50Hz 1665 1785 A
@60Hz 1740 1870 A
121 @50Hz 13.86 15.91 KA2s
@60Hz 12.56 14.52 KA2s
1211 138.6 159.1 KA2\/s
VRRM range 400to1600 V
TSTG - 40 to 125 00
TJ -40to125 oC
1
IRKUN71, 91 Series
127135 rev.F 10/02
Bulletin
International
ICm Rectifier
ELECTRICAL SPECIFICATIONS
Voltage Ratings
VRRIVI , maximum VRSM, maximum VDRM , max. repetitive |RRM
T b Voltage repetitive non-repetitive peak off-state voltage, |DRM
ype num er Code peak reverse voltage peak reverse voltage gate open circuit 125°C
- V V V mA
04 400 500 400
IRKUN71, 91 08 800 900 800 15
12 1200 1300 1200
16 1600 1700 1600
On-state Conduction
Parameters IRKUN71 IRKUA/91 Units Conditions
ITW) Max. average on-state 75 95 180° conduction, half sine wave,
current A Tc=85°C
INRMS) Max. RMS on-state 115 150 DC
current
@Tc 80 75 "C
|TSM Max. peak, one cycle 1665 1785 t=10ms No voltage
. . . Sinusoidal
non-repetitive on-state 1740 1870 t=8.3ms reapplied
half wave,
current 1400 1500 A t 10ms 100/oVRRM InitiaITJ=TJ max.
1470 1570 t=8.3ms reapplied
1850 2000 t=10ms T, =25°C.
1940 2100 t=8.3ms no voltage reapplied
Izt Max. I2tforfusing 13.86 15.91 t=10ms No voltage
12.56 14.52 t=8.3ms reapplied InitialTJ=TJ max.
9.80 11.25 KA2 t=10ms 100%VRRM
8.96 10.27 t=8.3ms reapplied
17.11 20.00 t=10ms TJ=25°C,
15.60 18.30 t=8.3ms no voltage reapplied
|th Max. PVttortusing (1) 138.6 159.1 M45 t=0.1 to 10ms, no voltage reapplied
Vnm) Max.value ofthreshold 0.82 0.80 V L0w|evel (3) T, = T, max
voltage(2) 0.85 0.85 High level (4)
rt Max. "r ofon-state 3.00 2.40 mn L6wlevel (3) T: = To max
sloperesistance(2) 2.90 2.25 Highlevel (4)
V Max. peak on-state I =axl
TM 1.59 1.58 v TM T(AV) T J = 25''C
voltage |FM=anF(AV)
di/dt Max. non-repetitive rate T J = 25°C, from 0.67 VDRM.
of use of turned on 150 Alps ITM =n x IWW), I9 = 500mA,
current tr< 0.5 ps,tp>6ps
. TJ=25°C,anodesupp|y=6V,
le, Max. holding current 200 . . . .
mA resistive load, gate open circuit
IL Max. latching current 400 T J = 25°C, anode supply = 6V, resistive load
(1) Pt for time tx = Wt x l. (2) Average power = VT(TO) x IHAV) + rtx (IT(RMS))2
(3)16.7%xrtxlAv
TCX|AV
