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IRHF7430SEIORN/a100avai500V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-205AF package


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IRHF7430SE
500V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-205AF package
International
TOR Rectifier
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-39)
Product Summary
PD-91863E
IRHF743OSE
JANSR2N7464T2
500V, N-CHANNEL
REF: MIL-PRF-19500/675
RAD HardeEXFET® TECHNOLOGY
International Rectifier’s FiADHardTM HEXFET® MOSFET
technology provides high performance power MOSFETs
for space applications. This technology has over a
Part Number Radiation Level RDS(on) ID QPL Part Number :1).
IRHF7430SE 100K Rads(Si) 1.779 2.5A JANSR2N7464T2 r-""
decade of proven performance and reliability in satellite Features:
applications. These devices have been characterized a Single Event Effect (SEE) Hardened
for both Total Dose and Single Event Effects (SEE). The " Ultra Low RDS(on)
combination of low RDS(on) and low gate charge reduces " Low Total Gate Charge
the power losses in switching applications such as DC to n Neuton Tolerant
DC converters and motor control. These devices retain " Simple Drive Requirements
all of the well established advantages of MOSFETs such " Ease of Paralleling
as voltage control, fast switching, ease of paralleling and I Hermetically Sealed
temperature stability of electrical parameters. " Light Weight
Absolute Maximum Ratings Pre-Irradiation
Parameter Units
t @ VGS = 12V, TC = 25°C Continuous Drain Current 2.5
t @ VGS = 12V, To = 100°C Continuous Drain Current 1.6 A
IDM Pulsed Drain Current (D 10
PD @ TC = 25°C Max. Power Dissipation 25 W
Linear Derating Factor 0.2 W/°C
VGS Gate-to-Source Voltage t20 V
EAS Single Pulse Avalanche Energy (2 154 mJ
IAR Avalanche Current Ct) 2.5 A
EAR Repetitive Avalanche Energy C) 2.5 mJ
dv/dt Peak Diode Recovery dv/dt Ct) 8.0 V/ns
TJ Operating Junction -55 to 150
TSTG Storage Temperature Range 0C
Lead Temperature 300 (0.063 in. (1.6mm) from case for 10 sec.)
Weight 0.98 (Typical) g
For footnotes refer to the last page
1
07/25/12

IRHF743OSE, JANSR2N7464T2
Pre-lrradiation
Electrical Characteristics @ Tl = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BVDss Drain-to-Source Breakdown Voltage 500 - - V VGS = 0V, ID = 1.0mA
ABVDss/ATJ Temperature Coefficient of Breakdown - 0.56 - V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State - - 1.77 Q VGS = 12V, t = 1.6A ©
Resistance
VGS(th) Gate Threshold Voltage 2.5 - 4.5 V VDs = VGS, ID = 1.0mA
gfs Forward Transconductance 0.4 - - S VDS >= 15V, IDS = 1.6A GD
loss Zero Gate Voltage Drain Current - - 50 A VDs= 400V ,VGs=OV
- - 250 " N/DS = 400V,
VGS = 0V, TJ = 125°C
less Gate-to-Source Leakage Forward - - 100 VGS = 20V
less Gate-to-Source Leakage Reverse - - -100 nA VGS = -20V
Qg Total Gate Charge - - 30 VGS =12V, ID = 2.5A
Qgs Gate-to-Source Charge - - 8.0 nC VDS = 250V
di Gate-to-Drain ('Miller') Charge - - 18
td(on) Turn-On Delay Time - - 35 VDD = 250V, ID = 2.5A,
tr Rise Time - - 60 ns VGS =12V, RG = 7.59
td(off) Turn-Off Delay Time - - 67
tf Fall Time - - 52
LS + LD Total Inductance - 7.0 - nH Measured from drain lead (6mm /O.25in
from package) to source lead (6mm /
0.25m. from package)
Ciss Input Capacitance - 620 - VGS = 0V, VDS = 25V
Coss Output Capacitance - 148 - pF f = 1.0MHz
Crss Reverse Transfer Capacitance - 52 -
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
Is Continuous Source Current (Body Diode) - - 2.5 A
ISM Pulse Source Current (Body Diode) G) - - 10
VSD Diode Forward Voltage - - 1.2 V T] = 25°C, ls = 2.5A, VGS = 0V ©
tn Reverse Recovery Time - - 400 ns Tj = 25°C, IF = 2.5A, di/dt S 1OOA/ps
QRR Reverse Recovery Charge - - 2.2 “C VDD I 50V (E)
ton Forward Turn-On Time Intrinsic tum-on time is negligible. Turn-on speed is substantially controlled by Ls + LD.
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction-to-Case - - 5.0 °C/W
RthJA Junction-to-Ambient - - 175 Typical socket mount
Nate: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page


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