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IRHF57130
100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-205AF package
International
TOR Rectifier
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-39)
Product Summary
PD-93789F
IRHF57130
JANSR2N7493T2
100V, N-CHANNEL
REF: MlL-PRF-19500/701
Rie TECHNOLOGY
Part Number Radiation Level RDS(on) ID QPL Part Number
IRHF57130 100K Rads (Si) 0.089 11.7A JANSR2N7493T2
IRHF53130 300K Rads (Si) 0.089 11.7A JANSF2N7493T2 1;;
IRHF54130 500K Rads (Si) 0.089 11.7A JANSG2N7493T2 I, :3:
IRHF58130 1000K Rads (Si) 0.109 11.7A JANSH2N7493T2 '
International Rectifier's RSTM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized F t .
for Single Event Effects (SEE) with useful performance ea_ures'
upto an LET of 80 (MeV/(mg/cm2)). The combination " Single Event Effect (SEE) Hardened
of low RDS(on) and low gate charge reduces the " Ultra Low RDS(on)
power losses in switching applications such as DC I Identical Pre- & Post-Electrical Test Conditions
to DC converters and motor control. These devices I: Repetitive Avalanehe Ratings
retain all of the well established advantages of " .yna.mi.Y.iv/d! Rati.ngs
MOSFETs such as voltage control, fast switching, l Simple Drive Requirements
ease of paralleling and temperature stability of II Ease of Paralleling
electrical parameters. II Hermetically Sealed
Absolute Maximum Ratings
Pre-lrradiation
Parameter Units
t @ VGS = 12V, TC = 25°C Continuous Drain Current 11.7
ID @ VGS = 12V, TC = 100°C Continuous Drain Current 7.4 A
IDM Pulsed Drain Current (D 47
PD @ TC = 25°C Max. Power Dissipation 25 W
Linear Derating Factor 0.2 W/°C
VGS Gate-to-Source Voltage t20 V
EAS Single Pulse Avalanche Energy (2 173 mJ
IAR Avalanche Current Ct) 11.7 A
EAR Repetitive Avalanche Energy C) 2.5 mJ
dv/dt Peak Diode Recovery dv/dt © 4.9 V/ns
TJ Operating Junction -55 to 150
TSTG Storage Temperature Range °C
Lead Temperature 300 (0.063 in./1.6mm from case for 10s)
Weight 0.98 (Typical) g
For footnotes refer to the last page
1
10/27/11
IRHF57130, JANSR2N7493T2
Pre-lrradiation
Electrical Characteristics @ TI = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max unit) Test Conditions
BVDss Drain-to-Source Breakdown Voltage 100 - - V VGS = 0V, ID = 1.0mA
ABVDSS/ATJ Temperature Coefficient of Breakdown - 0.12 - V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State - - 0.08 Q VGS = 12V, ID = 7.4A C4)
Resistance
Vegan) Gate Threshold Voltage 2.0 - 4.0 V VDS = VGS, ID = 1.0mA
gfs Forward Transconductance 8.7 - - S VDs = 15V, ts = 7.4A (4)
loss Zero Gate Voltage Drain Current - - 10 H A VDs= 80V NGS = 0V
- - 25 VDS = 80V,
VGS = 0V, TJ = 125°C
less Gate-to-Source Leakage Forward - - 100 n A VGS = 20V
less Gate-to-Source Leakage Reverse - - -100 VGS = -20V
Qg Total Gate Charge - - 50 VGS =12V, ID = 11.7A
Qgs Gate-to-Source Charge - - 7.4 no VDS = 50V
di Gate-to-Drain ('Miller') Charge - - 20
td(on) Turn-On Delay Time - - 25 VDD = 50V, ID =11.7A
tr Rise Time - - 100 ns VGS =12V, RG = 7.59
tti(oft) Turn-Off Delay Time - - 35
tt FallTime - - 30
LS + LD Total Inductance - 7.0 - nH Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
bonded from Source Pin to Drain Pad
Ciss Input Capacitance - 1038 - VGS = 0V, VDS = 25V
Coss Output Capacitance - 362 - pF t= 1.0MHz
Crss Reverse Transfer Capacitance - 45 -
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
Is Continuous Source Current (Body Diode) - - 11.7 A
ISM Pulse Source Current (Body Diode) G) - - 47
VSD Diode Forward Voltage - - 1.5 V T] = 25°C, ls = 11 .7A, VGS = 0V ©
trr Reverse Recovery Time - - 202 ns T] = 25°C, IF = 11.7A, di/dt S 100A/ps
QRR Reverse Recovery Charge - - 850 0C VDD 3 25V ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible. Tum-on speed is substantially controlled by Ls + LD.
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction-to-Case - - 5.0 °CNV
RthJA Junction-to-Ambient - - 175 Typical socket mount
Nate: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
