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IRGPC50F
600V Discrete IGBT in a TO-3P (TO-247AC) package
International
1:212 Rectifier
PD - 9.695A
IRGPC50F
INSULATED GATE BIPOLAR TRANSISTOR
Features
. Switching-loss rating includes all "tail" losses -
. Optimized for medium operating frequency (1 to VCES - 600V
10kHz) See Fig. 1 for Current vs. Frequency
curve VCE(sat) S 1.7V
E @VGE = 15V, lc = 39A
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have © E
higher usable current densities than comparable bipolar transistors, while at m
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high- /
Fast Speed IGBT
current applications.
/f/f/'//'
TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
lc @ Tc = 25°C Continuous Collector Current 70
k: @ Tc = 100°C Continuous Collector Current 39 A
ICM Pulsed Collector Current OD 280
ILM Clamped Inductive Load Current © 280
VGE Gate-to-Emitter Voltage 120 V
EARV Reverse Voltage Avalanche Energy © 20 mJ
PD @ Tc = 25°C Maximum Power Dissipation 200 W
Pro @ TC = 100°C Maximum Power Dissipation 78
Tu Operating Junction and -55 to +150
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Min Typ. Max. Units
Roos Junction-to-Case - - 0.64
Recs Case-to-Sink, flat, greased surface - 0.24 - “CNV
ReJA Junction-to-Ambient, typical socket mount - - 40
N Weight - 6 (0.21) - g (oz)
Revision 0
IRGPC50F TOR
Electrical Characteristics @ ll = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emi) Breakdown Voltage 600 - - V VGE = 0V, lc = 250PA
V(BR)ECS Emitter-to-Collector Breakdown Voltage © 20 - - V VGE = 0V, Ic = 1.0A
AV(BR)CEs/ATJ Temp. Coeff. of Breakdown Voltage - 0.62 - V/°C VGE = 0V, Ic = 1.0mA
Vcaon) Collector-to-emitter Saturation Voltage - 1.4 1.7 lc = 39A VGE = 15V
- 2.0 - V Ic = 70A See Fig. 2, 5
- 1.7 - Ic = 39A, T: =150°C
VGEW Gate Threshold Voltage 3.0 - 5.5 VCE = VGE, lc = 250pA
AVGE(m)/ATJ Temp. Coeff. of Threshold Voltage - -14 - mV/°C VCE = VGE, lc = 250pA
gfe Forward Transconductance © 21 30 - S VCE = 100V, Ic = 39A
ICES Zero Gate Voltage Collector Current - - 250 pA VGE = 0V, VCE = 600V
- - 2000 VGE = 0V, VCE = 600V, Tu = 150°C
IGES Gate-to-Emitler Leakage Current - - A100 nA VGE = iZOV
Switching Characteristics @ T, = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
% Total Gate Charge (tum-on) - 84 100 lc = 39A
Qge Gate - Emitter Charge (turn-on) - 20 25 nC Vcc = 400V See Fig. 8
Qgc Gate - Collector Charge (tum-on) - 51 67 Vas = 15V
td(0n) Tum-On Delay Time - 24 - To = 25°C
tr Rise Time - 50 - ns lc = 39A, Vcc = 480V
tum“) Tum-Off Delay Time - 270 540 VGE = 15V, Rs = 5.on
tf Fall Time - 210 360 Energy losses include "tail"
Eon Turn-On Switching Loss - 1.7 -
Eoff Turn-Off Switching Loss - 4.3 - mJ See Fig. 9, 10, 11, 14
Eu Total Switching Loss - 6.0 9.0
tdwn) Tum-On Delay Time - 25 - To = 150°C,
tr Rise Time - 49 - ns lc = 39A, Vcc = 480V
tuiott) Tum-Off Delay Time - 440 - VGE = 15V, Rs = 5.09
tf Fall Time - 410 - Energy losses include "tail"
Ets Total Switching Loss - 9.0 - mJ See Fig. 10, 14
LE Internal Emitter Inductance - 13 - nH Measured 5mm from package
Cies Input Capacitance - 3000 - VGE = 0V
Coes Output Capacitance - 340 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 40 - f = 1.0MHz
Notes:
© Repetitive rating; VGE=20V, pulse width
limited by max. junction temperature.
( See fig. 13b)
C) Vcc=80%(VcEs), VGE=20V, L=10pH,
Rs-- 5.09, (See fig. 13a)
(3 Repetitive rating; pulse width limited
by maximum junction temperature.
© Pulse width s: 80ps; duty factor 3 0.1%.
s Pulse width 5.0ps,
single shot.
