IRG4RC10UTRR ,600V UltraFast 8-60 kHz Discrete IGBT in a D-Pak packageFeatures C• UltraFast: Optimized for high operatingV = 600VCES frequencies ( 8-40 kHz in hard sw ..
IRG6I320U ,330V Plasma Display Panel Trench IGBT in a TO-220AB Full-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsV ±30Gate-to-Emitter Voltage VGEI @ T = 25 ..
IRG6I330U ,330V Plasma Display Panel Trench IGBT in a TO-220AB Full-Pak packageapplications I max @ T = 25°C250 ARP CTM Low V and Energy per Pulse (E )CE(on) PULSE T max150 °CJf ..
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IRG4RC10U-IRG4RC10UTR-IRG4RC10UTRL-IRG4RC10UTRR
600V UltraFast 8-60 kHz Discrete IGBT in a D-Pak package
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TOR, Rectifier
INSULATED GATE BIPOLAR TRANSISTOR
PD - 91572A
IRGARC1OU
UltraFast Speed IGBT
Features
. UltraFast: Optimized for high operating
frequencies ( 8-40 kHz in hard switching, >200
kHz in resonant mode)
. Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
previous generation
. Industry standard TO-252AA package
Benefits
. Generation 4 IGBT's offer highest efficiency available
. IGBT's optimized for specihed application conditions
VCES = 600V
G VCE(on) typ. = 2.15V
E @VGE = 15V, lc = 5.0A
n-chan nel
TO-252AA
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
lc @ TC = 25°C Continuous Collector Current 8.5
k: @ Tc = 100°C Continuous Collector Current 5.0 A
ICM Pulsed Collector Current C) 34
ILM Clamped Inductive Load Current © 34
VGE Gate-to-Emitter Voltage t20 V
EARV Reverse Voltage Avalanche Energy S 110 mJ
Pro @ Tc = 25°C Maximum Power Dissipation 38 W
Pro @ Tc = 100°C Maximum Power Dissipation 15
TJ Operating Junction and -55 to +150
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case )
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 3.3 "C/W
RQJA Junction-to-Ambient (PCB mount)* - 50
Wt Weight 0.3 (0.01) - g (oz)
* When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994
1
8/30/99
Downloaded from: http://www.datas
heetcataloq.com/
International
IRG4RC10U ISZR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emi Breakdown Voltage 600 - - V VGE = 0V, Ic = 250PA
V(BR)ECS Emitter-to-Collector Breakdown Voltage © 14 - - V VGE = 0V, Ic = 1.0A
AV(BR,CESIATJ Temperature Coeff. of Breakdown Voltage - 0.54 - V/°C VGE = 0V, IC = 1.0mA
- 2.15 2.6 lc = 5.0A VGE =15V
VCE(0N) Collector-to-Emi) Saturation Voltage - 2.61 - V k: = 8.5A See Fig.2, 5
- 2.30 - k: = 5.0A , To = 150°C
VGE(th) Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, Ic = 250pA
AVGE(m)/ATJ Temperature Coeff. of Threshold Voltage - -8.7 - mV/°C VCE = VGE, Ic = 250pA
gfe Forward Transoonductanoe 6) 2.8 4.2 - S VCE = 100V, lc = 5.0A
ICES Zero Gate Voltage Collector Current - - 250 VGE = ov, VCE = 600V
- - 2.0 PA VGE = 0V, VCE = 10V, To = 25''C
- - 1000 V95 = 0V, VCE = 600V, To = 150°C
IGES Gate-to-Emilia' Leakage Current - - i100 nA VGE = 120V
Switching Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
09 Total Gate Charge (turn-on) - 15 22 IC = 5.0A
Qge Gate - Emitter Charge (turn-on) - 2.6 4.0 nC Vcc = 400V See Fig. 8
Qgc Gate - Collector Charge (turn-on) - 5.8 8.7 VGE = 15V
tdmn) Turn-On Delay Time - 19 -
tr Rise Time - 11 - ns To = 25°C
td(off) Turn-Off Delay Time - 116 240 lc = 5.0A, Vcc = 480V
tr Fall Time - 81 180 VGE = 15V, RG = 1000
E0n Turn-On Switching Loss - 0.08 - Energy losses include "tail"
Es, Turn-Off Switching Loss - 0.16 - mJ See Fig. 9, 10, 14
Ets Total Switching Loss - 0.24 0.36
tdmn) Turn-On Delay Time - 18 - Tu = 150°C,
tr Rise Time - 14 - ns lc = 5.0A, Vcc = 480V
td(off) Turn-Off Delay Time - 180 - VGE = 15V, RG = 1009
tr Fall Time - 150 - Energy losses include "tail"
Ets Total Switching Loss - 0.36 - mJ See Fig. 11, 14
LE Internal Emitter Inductance - 7.5 - nH Measured 5mm from package
Cies Input Capacitance - 270 - VGE = 0V
Coes Output Capacitance - 21 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 3.5 - f = 1.0MHz
Notes:
C) Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
© Vcc = 80%(Vcss), VGE = 20V, L = 10pH, Re = 100f2, © Pulse width S 80ps; duty factors 0.1%.
(See fig. 13a) s Pulse width 5.0ps, single shot.
© Repetitive rating; pulse width limited by maximum
junction temperature.
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