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IRG4PSH71UDIRN/a12000avai1200V UltraFast 4-20 kHz CoPack IGBT in a TO-274AA package


IRG4PSH71UD ,1200V UltraFast 4-20 kHz CoPack IGBT in a TO-274AA packageFeaturesC• UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard swit ..
IRG4RC10K ,600V UltraFast 8-25 kHz Discrete IGBT in a D-Pak packageFeaturesC• Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and ..
IRG4RC10KD ,600V UltraFast 8-25 kHz Copack IGBT in a D-Pak packageFeatures Short Circuit Rated UltraFast: Optimized forV = 600VCES high operating frequencies >5.0 ..
IRG4RC10S ,600V DC-1 kHz (Standard) Discrete IGBT in a D-Pak packageInternational TOR RectifieruanDTahTelJemD c E n-channel Vcss = 600V Vcson) typ. = 1.10V ..
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IRG4RC10SDTR ,600V DC-1 kHz (Standard) Copack IGBT in a D-Pak packagePD-91678BIRG4RC10SD Standard Speed CoPackINSULATED GATE BIPOLAR TRANSISTOR WITHIGBTULTRAFAST SOFT R ..
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IRG4PSH71UD
1200V UltraFast 4-20 kHz CoPack IGBT in a TO-274AA package
International
IsaR Rectifier
PD - 91686
IRG4PSH71UD
INSULATED GATE BIPOLAR TRANSISTOR WITH UItraFast Copack IGBT
ULTRAFAST SOFT RECOVERY DIODE
Features
. UItraFast switching speed optimized for operating
frequencies 8 to 40kHz in hard switching, 200kHz
in resonant mode soft switching
. Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency
(minimum switching and conduction losses) than
prior generations
. Industry-benchmark Super-247 package with
higher power handling capability compared to
same footprint TO-247
. Creepage distance increased to 5.35mm
Benefits
. Generation 4 IGBT's offer highest efficiencies
available
. Maximum power density, twice the power
handling of the TO-247, less space than TO-264
. IGBTs optimized for specific application conditions
I Cost and space saving in designs that require
VCES = 1200V
E @VGE =15V, Ic = 50A
n-channel
multiple, paralleled IGBTs SUPER - 247
. HEXFREDTM antiparallel Diode minimizes
switching losses and EMI
Absolute Maximum Ratings
Parameter Max. Units
chs Collector-to-Emitter Voltage 1200 V
IC © Tc = 25°C Continuous Collector Current 99 A
'0 @ To = 100°C Continuous Collector Current 50
G, Pulse Collector Current C) 200
ILM Clamped Inductive Load current © 200
Vas Gate-to-Emitter Voltage t20 V
V @ To = 100°C Diode Continuous Forward Current 70
Iss, Diode Maximum Forward Current 200
PD @ TC = 25°C Maximum Power Dissipation 350 W
PD @ Tc = 100°C Maximum Power Dissipation 140
T, Operating Junction and -55 to +150
Tsre Storage Temperature Range ''C
Storage Temperature Range, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Thermal / Mechanical Characteristics
Parameter Min. Typ. Max. Units
RoJc Junction-to-Case- IGBT - - 0.36 °CNV
ROJC Junction-to-Case- Diode - - 0.36
Recs Case-to-Sink, flat, greased surface - 0.24 -
RNA Junction-to-Ambient, typical socket mount - - 38
Recommended Clip Force 20 (2.0) N (kgf)
Wt Weight - 6 (0.21) - g (oz.)
1
5/24/04
IRG4PSH71UD
International
IEER Rectifier
Electrical Characteristics © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emilie, Breakdown Voltage 6) 1200 - - V VGE = 0V, IC = 250PA
V(BR)ECS Emitter-to-Collector Breakdown Voltage 19 - - V l/ss = 0V, Ic = 1.0A
AV(BR)CEs/ATJ Temperature Coeff. of Breakdown Voltage - 0.78 - V/°C l/ss = 0V, Ic = 1mA
- 2.52 2.70 v IC = 70A l/se = 15V
VCE(on) Collector-to-Emitter Saturation Voltage - 3.17 - IC = 140A See Fig.2, 5
- 2.68 - IC = 70A, T: =150°C
VGE(th) Gate Threshold Voltage 3.0 - 6.0 VCE = Vas, lc = 250PA
AN/som/ATO Threshold Voltage temp. coefficient - -9.2 - mV/°C VcE = VGE, Ic = 1.0mA
gfe Forward Transconductance C9 48 72 - S Vcs = 100V, lc = 70A
ICES Zero Gate Voltage Collector Current - - 500 PA Vss = 0V, VCE = 1200V
- - 2.0 l/ss = 0V, VCE = 10V
- - 5000 l/ss = 0V, VCE = 1200V, TJ = 150°C
VFM Diode Forward Voltage Drop - 2.92 3.9 V V = 70A See Fig.13
- 2.88 3.7 V = 70A, T, = 150°C
lass Gate-to-Emitter Leakage Current - - 1100 nA VGE = t20V
Switching Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
q, Total Gate Charge (turn-on) - 380 570 lc = 70A
Qge Gate-to-Emitter Charge (turn-on) - 61 24 n0 Vcc = 400V See Fig.8
Qgc Gate-to-Collector Charge (turn-on) - 130 200 VGE = 15V
two", Turn-On delay time - 46 - IC = 70A, Vcc = 960V
t, Rise time - 77 - ns VGE = 15V, Rs = 5.09
tdom Turn-Off delay time - 250 350 Energy losses include "tail"
t, Fall time - 220 330 See Fig. 9, 10, 11, 14
Eon Turn-On Switching Loss - 8.8 -
Es, Turn-Off Switching Loss - 9.4 - mJ
Etat Total Switching Loss - 18.2 19.7
td(on) Turn-On delay time - 43 - To = 150°C, See Fig. 9, IO, 11, 14
t, Rise time - 78 - ns lc = 70A, Vcc = 960V
tdiom Turn-Off delay time - 330 - VGE = 15V, Re = 5.09
t, Fall time - 480 - Energy losses include "tail"
ETS Total Switching Loss - 26 - mJ
LE Internal Emitter Inductance - 13 - nH Measured 5mm from package
Cies Input Capacitance - 6640 - Vas = 0V
cu, Output Capacitance - 420 - pF Vcc = 30V, See Fig.7
Cres Reverse Transfer Capacitance - 60 - f = 1.0MH2
trr Diode Reverse Recovery Time - 110 170 ns Tu--25t See Fig
- 180 270 TJ=125°C 14 IF = 70A
Ir, Diode Peak Reverse Recovery Current - 6.0 9.0 A TJ=25°C See Fig
- 8.9 13 Tu=125% 15 vs, = 200V
0,, Diode Reverse Recovery Charge - 350 530 nC T.e25°C See Fig
- 870 1300 Tu=125''C 16 di/dt = 200A/ps
di(,ec,M/dt Diode Peak Rate of Fall of Recovery - 150 230 Alps TJ=25°C See Fig
During h, - 130 200 TJ=125°C 17
2
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