IRG4PSC71U ,600V UltraFast 8-60 kHz Discrete IGBT in a TO-274AA packageFeatures C• UltraFast switching speed optimized for operatingV = 600VCES frequencies 8 to 40kHz ..
IRG4PSH71K ,1200V UltraFast 4-20 kHz Discrete IGBT in a TO-274AA packageFeaturesV = 1200VCES• Hole-less clip/pressure mount package compatible with TO-247 and TO-264, ..
IRG4PSH71KD ,1200V UltraFast 4-20 kHz Copack IGBT in a TO-274AA packageFeaturesV = 1200V• Hole-less clip/pressure mount package compatibleCES with TO-247 and TO-264, ..
IRG4PSH71KDPBF ,1200V UltraFast 4-20 kHz Copack IGBT in a TO-274AA packageFeatures
. Hole-less clip/pressure mount package compatible
with TO-247 and TO-264, with reinfo ..
IRG4PSH71U ,1200V UltraFast 8-40 kHz Discrete IGBT in a TO-274AA packageFeatures C• UltraFast switching speed optimized for operatingV = 1200VCES frequencies 8 to 40kHz ..
IRG4PSH71UD ,1200V UltraFast 4-20 kHz CoPack IGBT in a TO-274AA packageFeaturesC• UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard swit ..
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IRG4PSC71U
600V UltraFast 8-60 kHz Discrete IGBT in a TO-274AA package
Internet onol
TOR Rectifier
INSULATED GATE BIPOLAR TRANSISTOR
PD - 91681A
IRG4PSC7'l U
UItraFast Speed IGBT
Features
. UItraFast switching speed optimized for operating
frequencies 8 to 40kHz in hard switching, 200kHz
in resonant mode soft switching
. Generation 4 IGBT design provides tighter
parameter distribution and higher ef5ciency
(minimum switching and conduction losses) than
prior generations
I Industry-benchmark Super-247 package with
n-chan
VCES = 600V
VCE(on)typ. = 1.67V
E @VGE = 15V, Ic = 60A
higher power handling capability compared to
same footprint TO-247
. Creepage distance increased to 5.35mm
Benefits
. Generation 4 IGBT's offer highest efficiencies
available
. Maximum power density, twice the power
handling of the TO-247, less space than TO-264
. IGBTs optimized for specific application conditions
. Cost and space saving in designs that require
multiple, paralleled IGBTs SUPER - 247
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Breakdown Voltage 600 V
Ic @ Tc = 25°C Continuous Collector Current 85©
lc @ Tc = 100°C Continuous Collector Current 60 A
ICM Pulsed Collector Current (D 200
ILM Clamped Inductive Load Current © 200
VGE Gate-to-Emitter Voltage * 20 V
EARV Reverse Voltage Avalanche Energy © 180 mJ
PD @ Tc = 25°C Maximum Power Dissipation 350 W
PD @ Tc = 100°C Maximum Power Dissipation 140
TJ Operating Junction and -55 to + 150
TSTG Storage Temperature Range °c
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )
Thermal Resistance\ Mechanical
Parameter Min. Typ. Max. Units
Rsoc Junction-to-Case - - 0.36
Recs Case-to-Sink, flat, greased surface - 0.24 - °CNV
ReJA Junction-to-Ambient, typical socket mount - - 38
Recommended Clip Force 20.0(2.0) - - N (kgf)
Weight - 6 (0.21) - g (oz)
1
5/12/99
IRG4PSC71 U
nternational
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emi) Breakdown Voltage 600 - - V VGE = 0V, lc = 250pA
V(BR)ECS Emitter-to-Collector Breakdown Voltage © 18 - - V VGE = 0V, lc = 1.0A
AV(BR)CEs/ATJ Temperature Coeff. of Breakdown Voltage - 0.45 V/°C VGE = 0V, k: = 5.0mA
- 1.67 2.0 k: = 60A VGE = 15V
Vcaow) Collector-to-Emi) Saturation Voltage - 1.95 - V k: = 100A See Fig.2, 5
- 1.71 - lc = 60A , To = 150°C
VGE(th) Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, lc = 250pA
AVGE(th)/ATJ Temperature Coeff. of Threshold Voltage - -10 - mV/°C VCE = VGE, Ic = 1.0mA
ge, Forward Transconductance © 47 70 - S VCE = UN, Ic = 60A
Ices Zero Gate Voltage Collector Current - - 500 pA l/ss = OV, VCE = 600V
- - 2.0 VGE = 0V, VCE = 10V, TJ = 25°C
- - 5.0 mA VGE = 0V, VCE = 600V, To = 150°C
IGEs Gate-to-Emilie, Leakage Current - - i100 nA VGE =120V
Switching Characteristics @ T J = 25°C (u
nless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
% Total Gate Charge (turn-on) - 340 520 lc = 60A
099 Gate - Emitter Charge (turn-on) - 44 66 nC Vcc = 400V See Fig. 8
Qgc Gate - Collector Charge (turn-on) - 160 240 VGE = 15V
tam) Turn-On Delay Time - 34 -
tr Rise Time - 50 - ns Tu = 25°C
tum) Turn-Off Delay Time - 56 84 Ic = 60A, Vcc = 480V
tf Fall Time - 86 130 VGE = 15V, Rs = 5.on
Ed Turn-On Switching Loss - 0.42 - Energy losses include "tail"
Eoff Turn-Off Switching Loss - 1.99 md See Fig. 10, 11, 13, 14
Ets Total Switching Loss - 2.41 3.2
tam) Turn-On Delay Time - 30 - Tu = 150''C,
t, Rise Time - 49 - ns Ic = 60A, Vcc = 480V
td(off) Turn-Off Delay Time - 129 - VGE = 15V, Rs = 5.on
tf Fall Time - 175 - Energy losses include "tail"
Ets Total Switching Loss - 4.5 - mJ See Fig. 13, 14
Ls Internal Emitter Inductance - 13 - nH Measured 5mm from package
Cies Input Capacitance - 7500 - VGE= 0V
Coes Output Capacitance - 720 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 93 - f = 1.0MHz
Notes:
co Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See Rr 13b )
© Vcc = 80%(VCE3), VGE = 20V, L = 10pH, RG = 5.0O,
(See ng. 13a)
© Repetitive rating; pulse width limited by maximum
junction temperature.
© Pulse width 3 80ps; duty factor S 0.1%.
S Pulse width 5.0ps, single shot.
© Current limited by the package, (Die current = 100A)
