![](/IMAGES/ls12.gif)
IRG4PH40UD-E ,Leaded 1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AC package6.*789!81 C
IRG4PH40UPBF ,1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC packageFeatures UltraFast: Optimized for high operatingV = 1200V frequencies up to 40 kHz in hard switc ..
IRG4PH50K ,1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC packageFeatures● High short circuit rating optimized for motor control,V = 1200VCESt =10μs, V = 720V, T = ..
IRG4PH50KD ,1200V UltraFast 4-20 kHz Copack IGBT in a TO-247AC packageFeatures High short circuit rating optimized for motor control, V = 1200VCES t =10µs, V = 720V , ..
IRG4PH50S ,1200V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC packageFeaturesC Standard: Optimized for minimum saturationV =1200V voltage and low operating frequenc ..
IRG4PH50U ,1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC packageFeatures UltraFast: Optimized for high operatingV = 1200V frequencies up to 40 kHz in hard switc ..
ISP1102W ,Advanced Universal Serial Bus transceiver
ISP1102W ,Advanced Universal Serial Bus transceiver
ISP1102W ,Advanced Universal Serial Bus transceiver
ISP1102W ,Advanced Universal Serial Bus transceiver
ISP1107W ,Advanced Universal Serial Bus transceivers
ISP1107W ,Advanced Universal Serial Bus transceivers
IRG4PH40UD-E
Leaded 1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AC package
International
:raRliUctifier
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
PD-91621C
IRG4PH40UD
UItraFast CoPack IGBT
Features
- UltraFast: Optimized for high operating
frequencies up to 40 kHz in hard switching,
>200 kHz in resonant mode
. New IGBT design provides tighter
parameter distribution and higher ethciency than
previous generations
. IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
n-channel
VCES = 1200V
@VGE = 15V, Ic = 21A
bridge configurations
. Industry standard TO-247AC package
Benefits
. Higher switching frequency capability than
competitive IGBTs
. Highest efficiency available
. HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
TO-247PC
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Breakdown Voltage 1200 V
Ic @ Tc = 25°C Continuous Collector Current 41
Ic @ Tc = 100°C Continuous Collector Current 21
ICM Pulsed Collector Current C) 82
ILM Clamped Inductive Load Current © 82 A
IF @ Tc = 100°C Diode Continuous Forward Current 8.0
IFM Diode Maximum Forward Current 130
l/se Gate-to-Emitter Voltage i 20 V
Pro @ Tc = 25°C Maximum Power Dissipation 160 W
Pro @ Tc = 100°C Maximum Power Dissipation 65
Tu Operating Junction and -55 to + 150
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case )
Mounting torque, 6-32 or M3 screw. 10 lbf-in (1.1N-m)
Thermal Resistance
Parameter Min Typ. Max. Units
ReJC Junction-to-Case - IGBT - - 0.77
Rouc Junction-to-Case - Diode - - 1 .7 ''CAlV
Recs Case-to-Sink, flat, greased surface - 0.24 -
RQJA Junction-to-Ambient, typical socket mount - - 40
Wt Weight - 6 (0.21) - g (oz)
1
1/24/06
International
IRG4PH40UD IEZR 'kyctifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emile/vm Voltages 1200 - - V VGE = 0V, Ic = 250pA
AV(BR)CEs/ATJ Temperature Coeff. of Breakdown Voltage - 0.43 - V/°C VGE = 0V, Ic = 1.0mA
Vegan) Collector-to-Emitter Saturation Voltage - 2.43 3.1 Ic = 21A l/se = 15V
- 2.97 - V k: = 41A See Fig. 2, 5
- 2.47 - k: = 21A, Tu = 150°C
VGEM Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, IC = 250pA
AVGE(th)/ATJ TemperatureCoeff.ofThresholdVoltage - -11 - mV/°C VCE = VGE, Ic = 250pA
9te Forward Transconductance (43 16 24 - S VCE = 100V, Ic = 21A
ICES Zero Gate Voltage Collector Current - - 250 pA l/se = 0V, VCE = 1200V
- - 5000 Vas = 0V, VCE = 1200V, Tu = 150''C
VFM Diode Forward Voltage Drop - 2.6 3.3 V k: = 8.0A See Fig. 13
- 2.4 3.1 Ic = 8.0A, TJ = 125°C
IGEs Gate-to-EmitterLeakageCurrent - - i100 nA VGE = t20V
Switching Characteristics @ To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
% Total Gate Charge (turn-on) - 86 130 Ic = 21A
Qge Gate - Emitter Charge (turn-on) - 13 20 nC Vcc = 400V See Fig. 8
Qgc Gate - Collector Charge (turn-on) - 29 44 l/se = 15V
tdon) Turn-On Delay Time - 46 - Tu = 25°C
tr Rise Time - 35 - ns IC = 21A, Vcc = 800V
td(off) Turn-Off Delay Time - 97 150 VGE = 15V, Rs = lon
tf Fall Time - 240 360 Energy losses include "tail" and
Eon Turn-On Switching Loss - 1.80 - diode reverse recovery.
Es, Turn-Off Switching Loss - 1.93 - mJ See Fig. 9, 10, 18
Ets Total Switching Loss - 3.73 4.6
tdon) Turn-On Delay Time - 42 - Tu = 150°C, See Fig. 11, 18
tr Rise Time - 32 - ns Ic = 21A, Vcc = 800V
td(oit) Turn-Off Delay Time - 240 - VGE = 15V, Rs = lon
tt Fall Time - 510 - Energy losses include "tail" and
Ets Total Switching Loss - 7.04 - mJ diode reverse recovery.
LE Internal Emitter Inductance - 13 - nH Measured 5mm from package
Cies Input Capacitance - 1800 - VGE = 0V
Goes Output Capacitance - 120 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 18 - f = 1.0MHz
trr Diode Reverse Recovery Time - 63 95 ns Tu = 25°C See Fig.
- 106 160 Tu =125°C 14 IF = 8.0A
Irr Diode Peak Reverse Recovery Current - 4.5 8.0 A Tu = 25°C See Fig.
- 6.2 11 Tu =125°C 15 VR = 200V
Qrr Diode Reverse Recovery Charge - 140 380 nC Tu = 25°C See Fig.
- 335 880 Tu = 125°C 16 di/dt = 200/Vps
di(rec)M/dt Diode Peak Rate of Fall of Recovery - 133 - Alps Tu = 25°C See Fig.
During h, - 85 - Tu = 125°C 17
2