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IRG4PH40U |IRG4PH40UIR N/a400avai1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package


IRG4PH40U ,1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC packageFeatures UltraFast: Optimized for high operatingV = 1200V frequencies up to 40 kHz in hard switc ..
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IRG4PH40U
1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package
International PD-91612C
Ieaa Rectifier IRG4PH40U
INSULATED GATE BIPOLAR TRANSISTOR Ultra Fast Speed IGBT
Features c
o UItraFast: Optimized for high operating
frequencies up to 40 kHz in hard switching, VCES = 1200V
>200 kHz in resonant mode
. New KPTes.i.T.providttiqhter . . VCE(on) typ. = 2.43V
parameter distribution and higher efficiency than
previous generations
. Optimized for power conversion; SMPS, UPS E
and welding n-channel
q Industry standard TO-247AC package
@VGE =15V, IC =21A
Benefits k
q Higher switching frequency capability than til
competitive IGBTs
. Highest efficiency available
. Much lower conduction losses than MOSFETs
. More efficient than short circuit rated IGBTs
TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Breakdown Voltage 1200 V
lo @ TC = 25°C Continuous Collector Current 41
k: @ To = 100°C Continuous Collector Current 21 A
ICM Pulsed Collector Current C) 82
ILM Clamped Inductive Load Current © 82
VGE Gate-to-Emitter Voltage t 20 V
EARV Reverse Voltage Avalanche Energy © 270 mJ
Pro © To = 25°C Maximum Power Dissipation 160 W
PD @ To = 100°C Maximum Power Dissipation 65
TJ Operating Junction and -55 to + 150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case )
Mounting torque, 6-32 or M3 screw. 10 Ibfoin (1 .1N-m)
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 0.77
Recs Case-to-Sink, Flat, Greased Surface 0.24 - °C/W
ReJA Junction-to-Ambient, typical socket mount - 40
Wt Weight 6 (0.21) - g (oz)
1
7/7/2000
International
IRG4PH40U TOR Rectifier
Electrical Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emi) Breakdown Voltage 1200 - - V VGE = 0V, Ic = 250pA
V(BR)ECS Emitter-to-Collector Breakdown Voltage © 18 - - V VGE = 0V, k; = 1.0A
AV(BR)CEs/ATJ Temperature Coeff. of Breakdown Voltage - 0.43 - VPC VGE = 0V, Ic = 1.0mA
- 2.43 3.1 IC = 21A VGE =15V
VCE(ON) Collector-to-Emi) Saturation Voltage - 2.97 - V k; = 41A See Fig.2, 5
- 2.47 - Ic = 21A , TJ = 150°C
VGEm.) Gate Threshold Voltage 3.0 - 6.0 VCE = Vas, Ic = 250pA
AVGEahyATJ Temperature Coeff. of Threshold Voltage - -11 - mV/°C VCE = Var, Ic = 250pA
ge Forward Transconductance © 16 24 - S VCE = 100V, IC = 21A
ICES Zero Gate Voltage Collector Current - - 250 Vas = OV, VCE = 1200V
- - 2.0 pA Vas = 0V, ch = 10V, TJ = 25°C
- - 5000 Vss = 0V, VCE = 1200V, Tu = 150°C
legs Gate-to-Emi) Leakage Current - - 1100 nA Vss = t20V
Switching Characteristics © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
% Total Gate Charge (turn-on) - 86 130 lc = 21A
che Gate - Emitter Charge (turn-on) - 13 20 n0 Vcc = 400V See Fig. 8
Qgc Gate - Collector Charge (turn-on) - 29 44 VGE = 15V
thon) Turn-On Delay Time - 24 -
t, Rise Time - 24 - ns TJ = 25°C
tam) Turn-Off Delay Time - 220 330 k: = 21A, Vcc = 960V
tf Fall Time - 180 270 VGE = 15V, Rs = lon
Eon Turn-On Switching Loss - 1.04 - Energy losses include "tail"
Est Turn-Off Switching Loss - 3.40 - mJ See Fig. 9, 10, 14
Ets Total Switching Loss - 4.44 5.2
tum) Turn-On Delay Time - 24 - Tu = 150°C,
tr Rise Time - 25 - ns k: = 21A, Vcc = 960V
tam) Turn-Off Delay Time - 310 - VGE = 15V, Rs = lon
t; Fall Time - 380 - Energy losses include "tail"
Ets Total Switching Loss - 7.39 - mJ See Fig. 11, 14
LE Internal Emitter Inductance - 13 - nH Measured 5mm from package
Cies Input Capacitance - 1800 - VGE = 0V
Goes Output Capacitance - 120 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 18 - f = 1.0MHz
Notes:
C) Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
© Vcc = 80%(VcEs), l/ss = 20V, L = 10pH, Re = Ion, © Pulse width S 80ps; duty factor 3 0.1%.
(See fig. 13a) G) Pulse width 5.0ps, single shot.
© Repetitive rating; pulse width limited by maximum
junction temperature.
2
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