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IRG4PC40UD-IRG4PC40UD-E-IRG4PC40UDPBF
600V UltraFast 8-60 kHz Copack IGBT in a TO-247AC package
International
:raRfuctifier
PD 9.1467D
IRG4PC40UD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
UItraFast CoPack IGBT
Features
. UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
. Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
. IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
n-channel
VCES = 600V
@VGE = 15V, lc = 20A
bridge conhgurations
. Industry standard TO-247AC package
Benefits
. Generation -4 IGBT's offer highest ethciencies
available
. IGBT's optimized for specihc application conditions
. HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
. Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's TO 247AC
Absolute Maximum Ratings
Parameter Max. Units
chs Collector-to-Emitter Voltage 600 V
Ic @ Tc = 25''C Continuous Collector Current 40
lc @ Tc = 100°C Continuous Collector Current 20
ICM Pulsed Collector Current C) 160 A
ILM Clamped Inductive Load Current © 160
IF @ Tc = 100°C Diode Continuous Forward Current 15
IFM Diode Maximum Forward Current 160
VGE Gate-to-Emitter Voltage i 20 V
PD @ Tc = 25°C Maximum Power Dissipation 160
Po @ Tc = 100°C Maximum Power Dissipation 65
To Operating Junction and -55 to +150
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 lbf-in (1.1 N-m)
Thermal Resistance
Parameter Min Typ. Max. Units
Rac Junction-to-Case - IGBT ------------ 0.77
ReJC Junction-to-Case - Diode ------------ 1.7 "C/W
Recs Case-to-Sink, flat, greased surface - 0.24 -
ReJA Junction-to-Ambient, typical socket mount ---------- 40
Wt Weight - 6 (0.21) ------ g (oz)
4/17/97
International
IRG4PC40UD ISZR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emi) Breakdown Voltages 600 - - V VGE = 0V, k: = 250pA
AV
VCE(on) Collector-to-Emitter Saturation Voltage - 1.72 2.1 Ic = 20A VGE = 15V
- 2.15 - V Ic = 40A See Fig. 2, 5
- 1.7 - Ic = 20A, TJ = 150''C
VGEith) Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, k: = 250pA
AVGE([h)/ATJ Temperature Coeff. of Threshold Voltage - -13 - mV/°C VCE = VGE, Ic = 250pA
gfe Forward Transconductance co 11 18 - S VCE = 100V, lc = 20A
ICES Zero Gate Voltage Collector Current - - 250 pA VGE = 0V, VCE = 600V
- - 3500 VGE = 0V, VCE = 600V, T: = 150°C
VFM Diode Forward Voltage Drop - 1.3 1.7 V Ic = 15A See Fig. 13
- 1.2 1.6 Ic = 15A, TJ = 150°C
IGES Gate-to-Emi) Leakage Current - - i100 nA VGE = :20V
Switching Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) - 100 150 Ic = 20A
Qge Gate - Emitter Charge (turn-on) - 16 25 nC Vcc = 400V See Fig. 8
Qgc Gate - Collector Charge (turn-on) - 40 60 VGE = 15V
td(on) Turn-On Delay Time - 54 - To = 25°C
tr Rise Time - 57 - ns Ic = 20A, Vcc = 480V
td(off) Turn-Off Delay Time - 110 165 VGE = 15V, Rs = lon
if Fall Time - 80 120 Energy losses include "tail" and
Ecm Turn-On Switching Loss - 0.71 - diode reverse recovery.
Eoff Turn-Ott Switching Loss - 0.35 - mJ See Fig. 9, 10, 11, 18
ES Total Switching Loss - 1.10 1.5
tdmn) Turn-On Delay Time - 40 - To = 150°C, See Fig. 9, 10, 11, 18
tr Rise Time - 52 - ns Ic = 20A, Vcc = 480V
toem) Turn-Off Delay Time - 200 - VGE = 15V, Rs = lon
if Fall Time - 130 - Energy losses include "tail" and
Ets Total Switching Loss - 1.6 - mJ diode reverse recovery.
LE Internal Emitter Inductance - 13 - nH Measured 5mm from package
Cies Input Capacitance - 2100 - VGE = 0V
Goes Output Capacitance - 140 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 34 - f = 1.0MHz
tn Diode Reverse Recovery Time - 42 60 ns TJ = 25°C See Fig.
- 74 120 To = 125°C 14 IF = 15A
Irr Diode Peak Reverse Recovery Current - 4.0 6.0 A To = 25°C See Fig.
- 6.5 10 TJ = 125°C 15 VR = 200V
Qrr Diode Reverse Recovery Charge - 80 180 nC To = 25°C See Fig.
- 220 600 T: = 125°C 16 di/dt 200/Vps
di(rec)M/dt Diode Peak Rate of Fall of Recovery - 190 - Alps TJ = 25°C
During h, - 160 - To = 125°C
