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IRFZ40IRN/a545avaiTrans MOSFET N-CH 50V 35A 3-Pin(3+Tab) TO-220AB


IRFZ40 ,Trans MOSFET N-CH 50V 35A 3-Pin(3+Tab) TO-220ABIRFZ40IRFZ40FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORSTYPE V R IDSS DS(on) DIRFZ40 50 V < ..
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IRFZ40
Trans MOSFET N-CH 50V 35A 3-Pin(3+Tab) TO-220AB
IRFZ40
IRFZ40FI

N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS TYPICAL RDS(on) = 0.022 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175o C OPERATING TEMPERATURE
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS REGULATORS DC-DC & DC-AC CONVERTERS MOTOR CONTROL, AUDIO AMPLIFIERS AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
July 1993
ABSOLUTE MAXIMUM RATINGS

(•) Pulse width limited by safe operating area
1/9
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Tcase = 25
o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
IRFZ40/FI

2/9
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING RESISTIVE LOAD
SOURCE DRAIN DIODE
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area for TO-220 Safe Operating Area for ISOWATT220
IRFZ40/FI

3/9
Thermal Impedance for TO-220
Derating Curve for TO-220
Output Characteristics
Thermal Impedance for ISOWATT220
Derating Curve for ISOWATT220
Transfer Characteristics
IRFZ40/FI

4/9
Transconductance Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage Capacitance Variations
Normalized On Resistance vs TemperatureNormalized Gate Threshold Voltage vs
Temperature
IRFZ40/FI

5/9
Source-drain Diode Forward Characteristics
Unclamped Inductive Load Test Circuit Unclamped Inductive Waveforms
Switching Time Test Circuit Gate Charge Test Circuit
IRFZ40/FI

6/9
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