IRFW830BTM ,500V N-Channel B-FET / Substitute of IRFW830AFeaturesThese N-Channel enhancement mode power field effect • 4.5A, 500V, R = 1.5Ω @V = 10 VDS(on) ..
IRFW830BTM ,500V N-Channel B-FET / Substitute of IRFW830AIRFW830B / IRFI830BNovember 2001IRFW830B / IRFI830B500V N-Channel MOSFET
IRFW840B ,500V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 8.0A, 500V, R = 0.8Ω @V = 10 VDS(on) ..
IRFW840BTM ,500V N-Channel B-FET / Substitute of IRFW840AFeaturesThese N-Channel enhancement mode power field effect • 8.0A, 500V, R = 0.8Ω @V = 10 VDS(on) ..
IRFY140CM ,100V Single N-Channel Hi-Rel MOSFET in a TO-257AA packageApplicationsand the heatsink. This improves thermal efficiency andreduces drain capacitance.Absolu ..
IRFY240CM ,200V Single N-Channel Hi-Rel MOSFET in a TO-257AA packageApplicationsThe HEXFET transistor’s totally isolated package eliminatesthe need for additional isol ..
ISL9N308AD3 ,N-Channel Logic Level UltraFET R Trench Power MOSFETs 30V, 50A, 8mOhmApplications• DC/DC convertersC (Typ) = 2600pFISSDDGGI-PAKSD-PAK (TO-251AA) STO-252(TO-252)G DSMOS ..
ISL9N310AS3ST ,N-Channel Logic Level PWM Optimized UltraFET?Trench Power MOSFETsApplications• DC/DC converters•C (Typ) = 1800pFISSSOURCESOURCEDRAINDRAINDRAIN (FLANGE)GATE GATEDRAI ..
ISL9R1560P2 ,15A, 600V Stealth Diodeapplications. The o Operating Temperature . . . . . . . . . . . . . . . . . . . . 175 CStealth™ fa ..
ISL9R1560PF2 ,15A, 600V Stealth DiodeApplicationsphase reduce loss in switching transistors. The soft Switch Mode Power Suppliesrecove ..
ISL9R1560PF2 ,15A, 600V Stealth DiodeFeatures Soft Recovery . . . . . . . . . . . . . . . . . . . . . . t / t > 1.2b aThe ISL9R1560PF2 ..
ISL9R1560S3ST ,15A, 600V Stealth Single Diodeapplications. The low I and short t phase reduce loss RM(REC) a Hard Switched PFC Boost Diodein sw ..
IRFW830BTM
500V N-Channel B-FET / Substitute of IRFI830A
IRFW830B / IRFI830B November 2001 IRFW830B / IRFI830B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 4.5A, 500V, R = 1.5Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 27 nC) planar, DMOS technology. • Low Crss ( typical 17 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge. D D !!!!!!!! ● ● ● ● ● ● ● ● ◀ ◀ ◀ ◀ ◀ ◀ ◀ ◀ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ● ● ● ● ● ● ● ● G!!!!!!!! ● ● ● ● ● ● ● ● 2 2 GS D -PAK I -PAK GS D IRFW Series IRFI Series !!!!!!!! S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter IRFW830B / IRFI830B Units V Drain-Source Voltage 500 V DSS I - Continuous (T = 25°C) Drain Current 4.5 A D C - Continuous (T = 100°C) 2.9 A C I (Note 1) Drain Current - Pulsed 18 A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 270 mJ AS I Avalanche Current (Note 1) 4.5 A AR E (Note 1) Repetitive Avalanche Energy 7.3 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns Power Dissipation (T = 25°C) * 3.13 W P A D Power Dissipation (T = 25°C) 73 W C - Derate above 25°C 0.58 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J stg Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 1.71 °C/W θJC R Thermal Resistance, Junction-to-Ambient * -- 40 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2001 Rev. B, November 2001
