| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| IRFW730AT |
IR|International Rectifier |
N/a |
9000 |
 |
|
IRFW730B ,400V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 5.5A, 400V, R = 1.0Ω @V = 10 VDS(on) ..
IRFW730BTM ,400V N-Channel B-FET / Substitute of IRFW730AFeaturesThese N-Channel enhancement mode power field effect • 5.5A, 400V, R = 1.0Ω @V = 10 VDS(on) ..
IRFW740 ,400V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 10A, 400V, R = 0.54Ω @V = 10 VDS(on) ..
IRFW820B ,500V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 2.5A, 500V, R = 2.6Ω @V = 10 VDS(on) ..
IRFW820BTM ,500V N-Channel B-FET / Substitute of IRFW820AFeaturesThese N-Channel enhancement mode power field effect • 2.5A, 500V, R = 2.6Ω @V = 10 VDS(on) ..
ISL9K860P3 ,8A, 600V Stealth Dual Diode
ISL9K860P3 ,8A, 600V Stealth Dual Diode
ISL9N2357D3ST ,30V, 0.007 Ohm, 35A, N-Channel UltraFET ?Trench Power MOSFET
