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IRFR9310IORN/a25avai-400V Single P-Channel HEXFET Power MOSFET in a D-Pak package
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IRFR9310-IRFR9310TR-IRFU9310
-400V Single P-Channel HEXFET Power MOSFET in a D-Pak package
PD 9.1663
IRFR/U9310
HEXFET® Power MOSFET
International
TOR. Rectifier
PRELIMINARY
o P-Channel D
o Surface Mount (IRFR9310) VDSS = -400V
o Straight Lead (IRFU9310)
0 Advanced Process Technology V =
o Fast Switching G _ _ RDS(on) 7.0f2
0 Fully Avalanche Rated -
S In - -1.8A
Description
Third Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
low on-resistance per silicon area. This benefit,
combined with the fastswitching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications. N
D-Pak I-Pak
The D-Pak is designed for surface mounting using T0-252AA T0-251AA
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, I/ss @ -10V -1.8
ID @ Tc = 100°C Continuous Drain Current, VGS @ -10V -1.1 A
IDM Pulsed Drain Current CO -7.2
Pro @Tc = 25°C Power Dissipation 50 W
Linear Derating Factor 0.40 W/°C
I/ss Gate-to-Source Voltage i 20 V
EAs Single Pulse Avalanche Energy© 92 mJ
IAR Avalanche CurrentCD -1.8 A
EAR Repetitive Avalanche Energy© 5.0 mJ
dv/dt Peak Diode Recovery dv/dt © -24 V/ns
Tu Operating Junction and -55 to + 150
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
Rac Junction-to-Case - 2.5
ReJA Junction-to-Ambient (PCB mount)" - 5O "C/W
ReJA Junction-to-Ambient - 1 10
7/30/97
IRFR/U931O
International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -400 - - V l/ss = 0V, ID = -250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coeffcient - -0.41 - V/°C Reference to 25°C, ID = -1mA
RDS(on) Static Drain-to-Source On-Resistance - - 7.0 f2 VGs = -10V, ID = -1.1A CO
Vngh) Gate Threshold Voltage -2.0 - -4.0 V VDs = l/ss, ID = -250pA
git Forward Transconductance 0.91 - - S VDs = -50V, ID = -1.1A
loss Drain-to-Source Leakage Current - - -100 PA VDS = -400V, VGS = 0V
- - -500 VDs = -320V, VGS = 0V, To = 125°C
less Gate-to-Source Forward Leakage - - 100 n A VGs = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
Qg Total Gate Charge - - 13 ID = -1.1A
Qgs Gate-to-Source Charge - - 3.2 nC VDs = -320V
di Gate-to-Drain ("Miller") Charge - - 5.0 VGS = -10V, See Fig. 6 and 13 ©
td(on) Turn-On Delay Time - 11 - VDD = -200V
tr Rise Time - 10 - ns ID = -1.1A
tam) Turn-Off Delay Time - 25 - R9 = 219
tr Fall Time - 24 - RD = 1800, See Fig. 10 GD
. Between lead, D
LD Internal Drain Inductance - 4.5 - .
nH 6mm (0.25in.) E )
Ls Internal Source Inductance -- 7 5 - from package G
. and center of die contacts s
Ciss Input Capacitance - 270 - VGs = 0V
Coss Output Capacitance - 50 - pF VDS = -25V
Crss Reverse Transfer Capacitance - 8.0 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - -1.8 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - -7 2 integral reverse G
(Body Diode) O) . p-n junction diode. s
VSD Diode Forward Voltage - - -4.0 V Tu = 25°C, Is = -1.1A, N/ss = 0V (4)
trr Reverse Recovery Time - 170 260 ns T: = 25°C, IF = -1.1A
Qrr Reverse RecoveryCharge - 640 960 nC di/dt = 100A/ps co
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by Ls+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© Starting Tu = 25°C, L = 57mH
Rs = 25:2, IAS; = -1.8A. (See Figure 12)
© ISD S -1.1A, di/dt S 450A/ps, VDD S V(BR)DSSI
T: S 150°C
© Pulse width f 300ps; duty cycle 3 2%.
G)This is applied for l-PAK, LS of D-PAK is measured between
lead and center of die contact
** When mounted on 1" square PCB (FR-4 or G-IO Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
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