IRFR9120TRL ,-100V Single P-Channel HEXFET Power MOSFET in a D-Pak packageapplications. Power dissipation levels up to 1.5 watts
are possible In typical surface mount
IRFR9120TRPBF , Dynamic dV/dt Rating
IRFR9120TRR ,-100V Single P-Channel HEXFET Power MOSFET in a D-Pak packageapplications. D-PAK i-PAK
TO-252AA TO~251AA
Absolute Maximum Ratings
_ Parameter Max. Units
..
IRFR9210 ,-200V Single P-Channel HEXFET Power MOSFET in a D-Pak packageapplications.
Absolute Maximum Ratings
IFIFU9210
T0-252AA
l-PAK
T0-251AA
Parameter ..
IRFR9210TR ,-200V Single P-Channel HEXFET Power MOSFET in a D-Pak packageInternational
192R
Rectifier
PD-9.521 D
IRFR921O
HEXFET® Power MOSFET
q Dynamic d ..
IRFR9214 ,-250V Single P-Channel HEXFET Power MOSFET in a D-Pak packageapplications. I-Pak D -PakThe D-Pak is designed for surface mounting using vapor TO-252AA TO-25 ..
ISL88694IH5Z-TK , SMBus Accelerator (SMA)
ISL88705IB846Z , uP Supervisor with Watchdog Timer, Power-Fail Comparator, Manual Reset and Adjustable Power-On Reset
ISL88705IB846Z , uP Supervisor with Watchdog Timer, Power-Fail Comparator, Manual Reset and Adjustable Power-On Reset
ISL88706 ,礟 Supervisor with Watchdog Timer, Power-Fail Comparator, Manual Reset and Adjustable Power-On ResetFeaturesPower-Fail Comparator, Manual Reset and • Fixed-Voltage Options Allow Precise Monitoring of ..
ISL88708 ,礟 Supervisor with Watchdog Timer, Power-Fail Comparator, Manual Reset and Adjustable Power-On ResetApplicationstime-out delay by adding an external capacitor to the C PORpin on the ISL88707 and ISL8 ..
ISL89410IBZ , High Speed, Dual Channel Power MOSFET Drivers
IRFR9120TR-IRFR9120TRL-IRFR9120TRR-IRFU9120-IRFU9120PBF
-100V Single P-Channel HEXFET Power MOSFET in a D-Pak package
1rtter,',r,yatiip,t,ttig
1:212 Rectifier
HEXFET® Power MOSFET
o Dynamic dv/dt Rating
0 Repetitive Avalanche Rated
o Surface Mount (IRFR9120)
o Straight Lead (IRFU9120)
0 Available in Tape & Reel
o P-Channel
0 Fast Switching
Description
PD-9.520D
llRFR9120
IRFU9120
VDSS .1''.= -100V
RDS(0n) TC, 0.60Q
ID = -5.6A
Third Generation HEXFETS from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The D-Pak is designed for surface mounting using vapor phase, infrared, or
wave soldering techniques. The straight lead version (IRFU series) is for
through-hole mounting applications. Power dissipation levels up to 1.5 watts
are possible in typical surface mount applications.
D-PAK l-PAK
TO-252AA TO~251AA
Absolute Maximum Ratings
Parameter Max. Units
Irs @ To = 25°C Continuous Drain Current, Vcss @ -10 V -5.6
ID @ To = 100°C Continuous Drain Current, Vss © ~10 V -3.6 A
IDM Pulsed Drain Current Ci) -22
Po @ To = 25°C 1 Power Dissipation 42 W
Pro @ TA = 25°C ; Power Dissipation (PCB Mount)" 2.5
Linear Derating Factor 0.33 IN PC
Linear Derating Factor (PCB Mount)" 0.020
Vas Gate-to-Source Voltage :20 V
EAs Single Pulse Avalanche Energy © 210 md
IAR Avalanche Current Ci) -5.6 A
EAR Repetitive Avalanche Energy (O 4.2 mJ
dv/dt Peak Diode Recovery dv/dt © -5.5 V/ns
To, TSTG (Junction and StorlgeDsmperature Range -55 to +150 Cl C
c._._____._lypsiering Temperature, for 10 second_s_ _._f..i60 (1.6mm from case)
Thermal Resistance
Parameter Min. Typ. ”Max. BLHJnits
Rax: Junction-to-Case - - 3.0
ReJA Junction-to-Ambient (PCB mount)" M - - 50 °C/W
ReJA Junction-to-Ambient ___4 - - 110
** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
IRFR9120, iRFU9120 1:212
Electrical Characteristics a TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -100 - - V 1hss--OV, |D=-250}J.A
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - -0.098 - VPC Reference to 25°C, |D=-1mA
RDS(on) Static Drain-to-Source On-Resistance - - 0.60 Q Var-...-), |D=-3.4A Cs)
Vesah) Gate Threshold Voltage -2.0 - -4.0 V VDs=VGs, b=-250ptA
giis Forward Transconductance 1.5 - - S Vos=-50V, iD=-3.4A (g)
loss Drain-to-Source Leakage Current - - -100 WA VDS=-1OOV’ VGSFOV
- -.. -500 Vrys=-80V,Vas--0V,Tu=1250C
less Gate-to-Source Forward Leakage - - -1 00 n A Vss=-20V
Gate-to-Source Reverse Leakage - - 100 Ves=20V
ch Total Gate Charge - - 18 |D=-6.8A
Qgs Gate-to-Source Charge - - 3.0 " VDs=-80V
di Gate-to-Drain ("Miller") Charge - - 9.0 VGs=-10V See Fig. 6 and 13 @
Tdton) Turn-On Delay Time - 9.6 - Voo=-50V
tr Rise Time - 29 - ns lry=-6.8A
tdioe) Turn-Off Delay Time ._ 21 - Re=18£2
tf Fall Time - 25 - Ro=7.1Q See Figure 10 ©
Lo Internal Drain Inductance - 4.5 - tt,1vr/on.lti'nd.') L_E:
nH from package GE”)
Ls Internal Source Inductance - 7.5 - and center df :3
die contact s
Ciss Input Capacitance - 390 - Vss--0V
Coss Output Capacitance - 170 - pF VDsy--c- 25V
Crss Reverse Transfer Capacitance - 45 - f=1.0MH2 See F igure 5
Source-Drain Ratings and Characteristics
_ Parameter Min. _ Typ, Max. Units Test Conditions
i,' ls Continuous Source Current _ - -5 6 MOSFET symbol D
(Body Diode) ' . A showing the F79
ISM Pulsed Source Current - - -22 integral reverse G m
(Body Diode) C) p-n junction diode. s
Vso Diode Forward Voltage - - -6.3 V TJ=25°C, Is=-5.6A, VGs=0V ©
tr, Reverse Recovery Time - 100 200 ns TJ=25°C, IF=-6.8A
G, Reverse Recovery Charge -.. O.33 0.66 wc di/dt=100A/p1s C4)
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
co Repetitive rating; pulse width limited by © Isos-6.8A., di/dts110A/ps, VDDSV(BR)DSS,
max. junction temperature (See Figure 11) TJS150°C
© VDD=-25V, starting TJ=25°C, L=10mH Ct) Pulse width f 300 us; duty cycle 52%.
RG=25§2, |As=-5.6A (See Figure 12)
