IRFU320B ,400V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 3.1A, 400V, R = 1.75Ω @V = 10 VDS(on) ..
IRFU320PBF ,400V Single N-Channel HEXFET Power MOSFET in a I-Pak packageapplications.
D-PAK
TO-252AA
l-PAK
TO-251AA
Absolute Maximum Ratings
- - 1 d Paramete ..
IRFU3303 ,30V Single N-Channel HEXFET Power MOSFET in a I-Pak packageapplications. Power dissipation levels up to 1.5 watts arepossible in typical surface mount
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IRFU3410 ,100V Single N-Channel HEXFET Power MOSFET in a I-Pak packageApplicationsV R max IDSS DS(on) D High frequency DC-DC converters100V 39mΩ 31ABenefits Low Gate- ..
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IRFU320B
400V N-Channel MOSFET
IRFR320B / IRFU320B March 2001 IRFR320B / IRFU320B 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 3.1A, 400V, R = 1.75Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 14 nC) planar, DMOS technology. • Low Crss ( typical 11 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge. D D !!!!!!!! ● ● ● ● ● ● ● ● ◀ ◀ ◀ ◀ ◀ ◀ ◀ ◀ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ● ● ● ● ● ● ● ● G!!!!!!!! ● ● ● ● ● ● ● ● D-PAK I-PAK G S G IRFR Series IRFU Series D S !!!!!!!! S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter IRFR320B / IRFU320B Units V Drain-Source Voltage 400 V DSS I - Continuous (T = 25°C) Drain Current 3.1 A D C - Continuous (T = 100°C) 2.0 A C I (Note 1) Drain Current - Pulsed 12.4 A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 240 mJ AS I Avalanche Current (Note 1) 3.1 A AR E (Note 1) Repetitive Avalanche Energy 4.1 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns Power Dissipation (T = 25°C) * 2.5 W P A D Power Dissipation (T = 25°C) 41 W C - Derate above 25°C 0.33 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J stg Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 3.05 °C/W θJC R Thermal Resistance, Junction-to-Ambient * -- 50 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 110 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2001 Rev. A, March 2001
