IRFS440B ,500V N-Channel MOSFETIRFS440BNovember 2001IRFS440B500V N-Channel MOSFET
IRFS440B ,500V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 6.2A, 500V, R = 0.8Ω @V = 10 VDS(on) ..
IRFS4410 ,HEXFET Power MOSFET IRFB4410IRFS4410IRFSL4410
IRFS4410TRLPBF ,100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package IRFB4410PbFIRFS4410PbFIRFSL4410PbF
IRFS4410TRLPBF ,100V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageApplicationsHEXFET Power MOSFETHigh Efficiency Synchronous Rectification in SMPSUninterruptib ..
IRFS4410ZPBF , HEXFET Power MOSFET
ISL9012 ,Dual LDO with Low Noise, Low IQ, and High PSRR
ISL9014IRGCZ , Dual LDO with Low Noise, Low IQ, and High PSRR
ISL9014IRJMZ , Dual LDO with Low Noise, Low IQ, and High PSRR
ISL9014IRKCZ , Dual LDO with Low Noise, Low IQ, and High PSRR
ISL9014IRKFZ , Dual LDO with Low Noise, Low IQ, and High PSRR
ISL9014IRKJZ , Dual LDO with Low Noise, Low IQ, and High PSRR
IRFS440B
500V N-Channel MOSFET
IRFS440B November 2001 IRFS440B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 6.2A, 500V, R = 0.8Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 41 nC) planar, DMOS technology. • Low Crss ( typical 35 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge. D !!!!!!!! ● ● ● ● ● ● ● ● ◀ ◀ ◀ ◀ ◀ ◀ ◀ ◀ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ● ● ● ● ● ● ● ● G!!!!!!!! ● ● ● ● ● ● ● ● TO-3PF GS D !!!!!!!! IRFS Series S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter IRFS440B Units V Drain-Source Voltage 500 V DSS I - Continuous (T = 25°C) Drain Current 6.2 A D C - Continuous (T = 100°C) 3.9 A C I (Note 1) Drain Current - Pulsed 24.8 A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 320 mJ AS I Avalanche Current (Note 1) 6.2 A AR E (Note 1) Repetitive Avalanche Energy 8.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns P Power Dissipation (T = 25°C) 85 W D C - Derate above 25°C 0.68 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 1.46 °C/W θJC R Thermal Resistance, Junction-to-Ambient -- 40 °C/W θJA ©2001 Rev. B, November 2001
