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IRFS4229IRN/a800avai250V Single N-Channel HEXFET Power MOSFET PDP Switch in a D2-Pak package
IRFS4229TRLPBFIORN/a770avai250V Single N-Channel HEXFET Power MOSFET PDP Switch in a D2-Pak package


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IRFS4229-IRFS4229TRLPBF
250V Single N-Channel HEXFET Power MOSFET PDP Switch in a D2-Pak package
International
PD - 97080B
Tart Rectifier PDP SWITCH llRFS4229PbF
Features
. Advanced Process Technology Key Parameters
. Key Parameters Optimized for PDP Sustain, VDS min 250 V
Energy Recovery and Pass Switch Applications VDs (Avalanche) typ. 300 V
. Pw.EPyr-sE. Rating to Reduce Power Roswm) typ. @ 10V 42 m9
Dissipation In PDP Sustain, Energy Recovery o
and Pass Switch Applications Ins, max @ TC: 100 C 91 A
. Low QG for Fast Response TJ max 175 °C
. High Repetitive Peak Current Capability for
Reliable Operation D D
. Short Fall & Rise Times for Fast Switching vc,fiiiiit,
.175°C Operating Junction Temperature for "'i1if'ieii;
Improved Ruggedness "l " l L, s
. Repetitive Avalanche Capability for Robustness G GD
and Reliability
s D2Pak
Gate Drain Source
Description
This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch
applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve
low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C
operating junction temperature and high repetitive peak current capability. These features combine to
make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Absolute Maximum Ratings
Parameter Max. Units
Vss Gate-to-Source Voltage t30 V
lo @ TC = 25°C Continuous Drain Current, Vss @ 10V 45 A
ID @ TC = 100°C Continuous Drain Current, Vas @ 10V 32
los, Pulsed Drain Current OD 180
lm, © To = 100°C Repetitive Peak Current © 91
PD @TC = 25°C Power Dissipation 330 W
PD @TC = 100°C Power Dissipation 190
Linear Derating Factor 2.2 W/°C
TJ Operating Junction and -40 to + 175 =
TSTG Storage Temperature Range
Soldering Temperature for 10 seconds 300
Mounting Torque, 6-32 or M3 Screw 1OIb-in (1 .1N-m) N
Thermal Resistance
Parameter Typ. Max. Units
Rmc Junction-to-Case GD - 0.45*
RBJA Junction-to-Ambient GD - 62
* Fhsuc (end of life) for D2Pak and TO-262 = O.65°C/W. This is the maximum measured value after 1000 temperature
cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium.
Notes (O through s are on page 9
1

09/16/08
IRFS4229PbF
International
TOR Rectifier
Electrical Characteristics © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 250 - - V I/ss = 0V, ID = 250pA
ABVDss/ATJ Breakdown Voltage Temp. Coefficient - 210 - mV/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 42 48 m9 Ves = 10V, ID = 26A C3)
Vesah) Gate Threshold Voltage 3.0 - 5.0 v VDs = Veg, ID = 250uA
AVGSuh/ATJ Gate Threshold Voltage Coefficient - -14 - mV/°C
loss Drain-to-Source Leakage Current - - 20 A Vos = 250V, Vss = 0V
- - 200 p Vos = 250v, Vas = OV, Tu = 125°C
less Gate-to-Source Forward Leakage - - 100 n A Vss = 20V
Gate-to-Source Reverse Leakage - - -100 Ves = -20V
gts Forward Transconductance 83 - - S Vos = 25V, ID = 26A
a, Total Gate Charge - 72 110 no Va, = 125V, ID = 26A, Vss = 10V©
di Gate-to-Drain Charge - 26 -
tmon) Turn-On Delay Time - 18 - Va, = 125V, N/ss = 10V ©
t, Rise Time - 31 _ ns ID = 26A
tom Turn-Off Delay Time - 30 - Ra = 2.49
t, Fall Time - 21 - See Fig. 22
ts! Shoot Through Blocking Time 100 - - ns VDD = 200V, Vas = 15V, Re: 4.79
L = 220nH, C= 0.3pF, Vss =15V
EPULSE Energy per Pulse - 790 - Vos = 200v, Ra-- 4.79, TJ = 25°C
pd L = 220nH, C-- 0.3pF, Vss =15V
- 1390 - l/os = 200v, Re: 4.7f2, T, = 100°C
Ciss Input Capacitance - 4560 - Vss = 0V
Coss Output Capacitance - 390 - F VDS = 25V
Crss Reverse Transfer Capacitance - 100 - p f = 1.0MHz,
Coss eff. Effective Output Capacitance - 290 - Vss = 0V, l/ns = 0V to 200V
LD Internal Drain Inductance Between lead, D
- 4.5 - .
nH and center of die contact f l,
Ls Internal Source Inductance - 7.5 - G ' /
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 130 mJ
EAR Repetitive Avalanche Energy C) - 33 mJ
VDaAvaesnche) Repetitive Avalanche Voltage co 300 - V
|As Avalanche Current © - 26 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls @ TC = 25°C Continuous Source Current - _ 45 MOSFET symbol D
(Body Diode) A showing the R2:
Iss, Pulsed Source Current - _ 180 Integral T"".'."' 6 (of,
(Body Diode) co p-n Junction diode. a
VSD Diode Forward Voltage - - 1.3 V Tu = 25°C, ls = 26A, Vas = 0V (3
trr Reverse Recovery Time - 190 290 ns Tu = 25°C, IF = 26A, VDD = 50V
a,, Reverse Recovery Charge - 840 1260 nC di/dt = 100A/ps ©
2

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