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IRFRC20IRN/a25200avai600V Single N-Channel HEXFET Power MOSFET in a D-Pak package
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IRFRC20-IRFRC20PBF-IRFUC20-IRFUC20PBF
600V Single N-Channel HEXFET Power MOSFET in a D-Pak package
PD-9.637C
IRFRCZO
IRFUCZO
VDSS = 600V
1ritettyitiliiptyitl
7iJ1it Rectifier
HEXFET6 Power MOSFET
o Dynamic dv/dt Rating
0 Repetitive Avalanche Rated
tt Surface Mount (llRFRC20)
It Straight Lead (IRFUC20)
0 Available in Tape & Reel
0 FastSwitching
0 Ease of Paralleling
RDS(on) = 4.4f2
s ID = 2.0A
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The D-Pak is designed for surface mounting using vapor phase, infrared, or
wave soldering techniques. The straight lead version (IRFU series) is for
through-hole mounting applications. Power dissipation levels up to 1.5 watts
are possible in typical surface mount applications. D-PAK
TO-252AA TO-251AA
Absolute Maximum Ratings
Parameter Max. Units
lo @ To = 25°C Continuous Drain Current, Vss © 10 V 2.0
lo © To = 100°C Continuous Drain Current, Vss @ 10 V 1.3 A
IDM Pulsed Drain Current (i) 8.0
PD © Tc = 25°C Power Dissipation 42 W
PD @ TA = 25°C Power Dissipation (PCB Mount)" 2.5
Linear Derating Factor 0.33 W PC
Linear Derating Factor (PCB Mount)" 0.020
Vss Gate-to-Source Voltage i20 V
EAS Single Pulse Avalanche Energy © 450 mJ
IAR Avalanche Current C) 2.0 A
EAR Repetitive Avalanche Energy C) 4.2 md
dv/dt Peak Diode Recovery dv/dt CO 3.0 V/ns
Tu, TSTG Junction and Storage Temperature Range -55 to +150 °C
Soldering Temperature, for 10 seconds 260 (1.6mm from case)
Thermal Resistance
Parameter Min. Typ. Max. Units
Flax, Junction-to-Case - -_ 3.0
Ras Junction-to-Ambient (PCB mount)" - - 50 °C/W
Rem Junction-to-Ambient - - 1 1O
** When mounted on 1" square PCB (FR-4 or G-1O Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
IRFRCZO, IRFUCZO
Electrical Characteristics tii) To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(BH)DSS Drain-to-Source Breakdown Voltage 600 - - V I/as-MN, ID: 250p1A
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.88 - VPC Reference to 25°C, In: 1mA
Roman) Static Drain-to-Source On-Resistance - - 4.4 Q Ves=10V, 19:1.2A C9
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDs=VGs, ' 25OWA
grs Forward Transconductance 1.4 - - S Vos=50V, lo=1.2A C40
loss Drain-to-Source Leakage Current - H 100 “A VDS=6OOV’ l/ss-HN
- - 500 VDs=480V, Ves=0V, Ta=125°C
lass Gate-to-Source Forward Leakage - - 100 n A Vss--20V
Gate-to-Source Reverse Leakage - - -100 Var=-20V
09 Total Gate Charge - - 18 ID: 2.0A
Q95 Gate-to-Source Charge - - 3.0 I VDs=360V
di Gate-to-Drain ("Miller") Charge - - 8.9 Vss=10V See Fig. 6 and 13 Cs)
tam) Turn-On Delay Time - 10 - VDD=300V
tr Rise Time -...rq 23 - ns ID: 2.0A
tdm) Tu rn-Off Delay Time - 30 - Fle=18§2
t: Fall Time -..- 25 - RD=1359 See Figure 10 (g)
Lo Internal Drain Inductance - 4.5 - gergvgnefci ite'. ') D
nH from package 6Q: )
Ls Internal Source Inductance - 7.5 - Ind center bf
die contact s
Ciss Input Capacitance - 350 - I/ss-HN
Coss Output Capacitance - 48 - pF VDs= 25V
Crss Reverse Transfer Capacitance - 8.6 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
ls Continuous Source Current - - 2 0 MOSFET symbol D
(Body Diode) . A showing the |__1 :
ISM Pulsed Source Current - - 8 0 integral reverse G p
(Body Diode) (i) . p-n junction diode. s
Vso Diode Forward Voltage - - 1.6 V TJ=2500, ls=2.0A, VGs=0V ©
trr Reverse Recovery Time - 290 580 ns TJ=25°C, IF: 2.0A
C),, Reverse Recovery Charge - 0.67 1.3 wc di/dt=100A/ps co
ton ForwardTurn-OnTime Intrinsicturn-ontimeismaglegible(turn-onisdominatedbyLsrrluo)
Notes:
(D Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=50V, starting TJ=25°C, L=206mH
Re=259, lAs=2.0A (See Figure 12)
© l5032.0A, di/dts40/Vps, VDDSV(BR)DSS.
TJS150°C
GD Pulse width 3 300 us; duty cycle A%.
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