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IRFR9220TRIRN/a27000avai-200V Single P-Channel HEXFET Power MOSFET in a D-Pak package
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IRFR9220TR-IRFR9220TRL-IRFR9220TRR-IRFU9220PBF
-200V Single P-Channel HEXFET Power MOSFET in a D-Pak package
International
192R Rectifier
HEXFET6 Power MOSFET
0 Dynamic dv/dt Rating
o Repetitive Avalanche Rated
tt Surface Mount (IRFR9220)
0 Straight Lead (IRFU9220)
0 Available in Tape & Reel
o P-Channel
0 Fast Switching
Description
The HEXFET technology is the key to International Rectifier's advanced line
of power MOSFET transistors. The efficient geometry and unique processing
of the HEXFET design achieve very low on-state resistance combined with
PD-9.522D
RDS(on) =
b----3.6A
high transconductance and extreme device ruggedness.
The D-Pak is designed for surface mounting using vapor phase, infrared, or
wave soldering techniques. The straight lead version (IRFU series) is for
through-hole mounting applications. Power dissipation levels up to 1.5 watts
. . D-PAK l-PAK
are possible in typical surface mount applications. TO-252AA To-251AA
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, Ves @ -10 V -3.6
In @ Tc = 100°C Continuous Drain Current, VGS © -10 V -2.3 A
low; Pulsed Drain Current OD -14
Po @ Tc = 25°C Power Dissipation 42 W
Po @ TA = 25°C Power Dissipation (PCB Mount)" 2.5
Linear Derating Factor 0.33 W PC
Linear Derating Factor (PCB Mount)" 0.020
l/tss Gate-to-Source Voltage :20 V
EAS Single Pulse Avalanche Energy © 310 md
IAR Avalanche Current C) -3.6 A
EAR Repetitive Avalanche Energy CO 4.2 mJ
dv/dt Peak Diode Recovery dv/dt © -5.0 V/ns
Tu, TsTG Junction and Storage Temperature Range -55 to +150 ''t3
Soldering Temperature, for 10 seconds 260 (1.6mm from case)
Thermal Resistance
Parameter Min. Typ. Max. Units
Rac Junction-to-Case P.'-... - 3.0
Rem Junction-to-Ambient (PCB mount)" -- - 50 °C/W
Rm. Junction-to-Ambient - - 110
" When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
|RFR9220, IRFU920
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(anmss Drain-to-Source Breakdown Voltage -200 - - V Ves=0V, L---250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - -0.22 - V/°C Reference to 25°C, |o=-1mA
RDS(on) Static Drain-to-Source On-Resistance - - 1.5 n Vas=-1OV, lo=-2.2A (4C)
VGS(th) Gate Threshold Voltage 2.0 - -4.0 V Vros--Vos, lro---250yA
gfs Forward Transconductance 1.1 - - S VDs=-50V, !D=-2.2A @
loss Drain-to-Source Leakage Current - - -100 11A Vos=-200V, VGs=OV
T - - -500 VDs=-160V, Vss=0V, TJ=125°C
less Gate-to-Source Forward Leakage - - -100 n A VGs=-20V
Gate-to-Source Reverse Leakage - - 100 VGs=20V
09 Total Gate Charge - - 20 ID=-3.9A
Qgs Gate-to-Source Charge - - 3.3 nC VDs=-16OV
di Gate-to-Drain ("Miller") Charge - - 11 VGs=-1OV See Fig. 6 and 13 C4)
td(on) Turn-On Delay Time - 8.8 - VDD=-1OOV
tr . Rise Time - 27 - ns |D=-3.9A
tdiom Turn-Off Delay Time - 7.3 - RG=1BQ
t, l Fall Time - 19 - Ro=24Q See Figure 10 ©
Lo 1 Internal Drain Inductance - 4.5 - 't2(,ei'on.lti'nd.') 1 D
: nH from package cg
Ls 9 Internal Source Inductance - 7.5 - Ind center 6f
_ die contact s
Ciss i' Input Capacitance - 340 - I/ss-HN
Coss l Output Capacitance - 110 - pF Vrss=-25V
Crss ; Reverse Transfer Capacitance - 33 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
Is Continuous Source Current - - -3 6 MOSFET symbol D
(Body Diode) . A showing the 1'1,
ISM Pulsed Source Current - - -14 integral reverse G D.‘
(Body Diode) C) p-n junction diode. s
Vso Diode Forward Voltage - - -6.3 V To=2S'C, Is=-3.6A, Vss=OV C4)
tr, Reverse Recovery Time - 150 300 ns TJ=25°C, IF=-3.9A
er Reverse Recovery Charge - 0.97 2.0 ptC dildt=100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-ron is dominated by Ls+LD)
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=-50V, starting TJ=25°C, L=35mH
Rs=25f2, lAs=-3.6A (See Figure 12)
TJS150°C
© Isos-3.9A, di/de95A/ps, VDDSV(BR)DSS.
(ii) Pulse width S 300 ps; duty cycle f2%.
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