IRFR9024NTRRPBF ,-55V Single P-Channel HEXFET Power MOSFET in a D-Pak packageInternational
TOR Rectifier1
00000005
"''ljlfra Low On-Resistance
P-Channel
Surface Mount ..
IRFR9024PBF , HEXFET POWER MOSFET ( VDSS = -60V , RDS(on) = 0.28Ω , ID = -8.8A )
IRFR9024TR ,-60V Single P-Channel HEXFET Power MOSFET in a D-Pak packageapplications. D-PAK LPAK
TO-252AA TO-251AA
Absolute Maximum Ratings
Parameter Max. Units
ID @ T ..
IRFR9024TR ,-60V Single P-Channel HEXFET Power MOSFET in a D-Pak packageapplications. D-PAK LPAK
TO-252AA TO-251AA
Absolute Maximum Ratings
Parameter Max. Units
ID @ T ..
IRFR9024TRPBF , Power MOSFET
IRFR9110 ,-100V Single P-Channel HEXFET Power MOSFET in a D-Pak packagePD-9.519E
International
1:212 Rectifier |RFR91 1O
HEXFET% Power MOSFET I IR FU 91 1 O
. D ..
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IRFR9024NTRRPBF
-55V Single P-Channel HEXFET Power MOSFET in a D-Pak package
PD - 95015A
International
. . |RFR9024NPbF
Tart, Rectifier
. IRFU9024NPbF
. Ultra Low On-Resistance
o P-Channel HEXFETD Power MOSFET
a Surface Mount (IRFR9024N)
. Straight Lead (IRFU9024N) D = -
0 Advanced Process Technology VDSS 55V
0 Fast Switching -
0 Fully Avalanche Rated G Rros(on) - 0.17ein
q Lead-Free -
Description s ID - -l IA
Fifth Generation HEXF ETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The D-Pak is designed for surface mounting using
. . . D-Pak
vapor phase, infrared, or wave soldering techniques. T 0-2 52A A
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
Absolute Maximum Ratings
Parameter Max. Units
b Cl Tc = 25''C Continuous Drain Current, l/ss C) -10V -11
ID C) TC =100''C Continuous Drain Current, Ves (P -10V -8 A
bs, Pulsed Drain Current OD -44
PD QTc = 25''C Power Dissipation 38 W
Linear Derating Factor 0.30 we
Vos Gate-to-Source Voltage i 20 V
EAS Single Pulse Avalanche Energy0) 62 mJ
IAR Avalanche Current© -6.6 A
EAR Repetitive Avalanche Energy© 3.8 mJ
dv/dt Peak Diode Recovery dv/dt © -10 V/ns
Tu Operating Junction and -55 to + 150
Ten; Storage Temperature Range °c
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
Rrc Junction-to-Case - 3.3
Rs Junction-to-Ambient (PCB mount)" - 50 ''C/W
ReJA Junction-to-Ambient - 110
1
12/14/04
IRFR/U9024NPbF
International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-ttFSource Breakdown Voltage -55 -.._.. - V Vss = 0V, b = -250PA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - -0.05 - V/°C Reference to 25''C, b = -1mA
RDS(on) Static Drain-to-Source On-Resistance - - 0.175 n Veg = -10V. ID = -6.6A ©
Vesum Gate Threshold Voltage -2.0 - -4.0 V Mos = Vos, ID = -250pA
git Forward Transconductance 2.5 - - S Vos = -25V. b = -7.2A©
bss Drain-toSource Leakage Current - - -25 pA Mos = -551/, l/ss = 0V
- - -250 Mos = -44V, l/ss = ov, Tu = 150°C
Gate-to-Source Forward Leakage - - 100 Vss = 20V
less Gate-to-Source Reverse Leakage - - -100 nA I/ss = -20V
ck Total Gate Charge - - 19 b = -7.2A
Qgs Gate-to-Source Charge - - 5.1 nC VDS = -44V
di Gate-to-Drain ("Miller") Charge - - 10 I/ss = -10V, See Fig. 6 and 13 ©©
tum) Turn-On Delay Time - 13 - VDD = -28V
tr RiseTime - 55 - ns b = -7.2A
tdwm Turn-Off Delay Time - 23 - Rs = 24n
tf FallTime - 37 - RD = 3.79, See Fig. 10 ©©
LD Internal Drain Inductance - 4.5 - Between lr") D
nH 6mm(0.25in.) oirl, ,
Ls Internal Source Inductance - 7.5 - 2::c:::::i: die contacts S
CISS Input Capacitance - 350 - Ves = 0V
Coss Output Capacitance - 170 - pF Ws = -25V
Css Reverse Transfer Capacitance - 92 - f = 1.0MHz, See Fig. 5©
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - -1 1 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - -44 integral reverse o
(Body Diode) co p-n junction diode. s
Vso Diode Forward Voltage - - -1.6 V Tu = 25''C, Is = -7.2A. Ves = 0V CO
trr Reverse Recovery Time - 47 71 ns Tu = 25''C, Ii: = -7.2A
er Reverse Recovery Charge - 84 130 nC di/dt = 100A/ps ©©
ton Forward Tum-On Time Intrinsic tum-on time is negligible (turn-on is dominated by Ls+ Lo)
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© Starting Tu-- 25''C, L = 2.8mH
Rs = 259, IAS; = -6.6A. (See Figure 12)
© ISD S -6.6A. di/dt S 240Atos, VDD S V(BR)c)ss,
Tu C 150°C
© Pulse width E 300ps: duty cycle C 2%.
©This is applied for I-PAK, Ls of D-PAK is measured between
lead and center of die contact
© Uses IRF9Z24N data and test conditions.
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
