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IRFR9014IRN/a25200avai-60V Single P-Channel HEXFET Power MOSFET in a D-Pak package
IRFR9014TRIRN/a470avai-60V Single P-Channel HEXFET Power MOSFET in a D-Pak package


IRFR9014 ,-60V Single P-Channel HEXFET Power MOSFET in a D-Pak packageapplications. Absolute Maximum Ratings |RFU9014 D- PA K TO-252AA I-PAK TO-251AA Pa ..
IRFR9014TR ,-60V Single P-Channel HEXFET Power MOSFET in a D-Pak packageIntergatipytl TOR Rectifier PD-9.654A IRFR9014 HEXFET% Power MOSFET . Dynamic dv/dt Ra ..
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IRFR9020 ,REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS
IRFR9020 ,REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS
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ISL88013IH522Z-TK , 5 Ld Voltage Supervisors with Adjustable Power-On Reset, Dual Voltage Monitoring or Watchdog Timer Capability


IRFR9014-IRFR9014TR
-60V Single P-Channel HEXFET Power MOSFET in a D-Pak package
llntennatiantig
Rectifier
HEXFET® Power MOSFET
q Dynamic dv/dt Rating
o Repetitive Avalanche Rated
0 Surface Mount (lRFR9014)
tt Straight Lead (IRFU9014)
PD-9.654A
IRFR9014
|RFU9014
0 Available in Tape & Reel G
0 P-Channel
0 Fast Switching
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
l/DSS =-60V
RDS(on) = 0.509
ID=-5.1A
on-resistance and cost-effectiveness.
The D-Pak is designed for surface mounting using vapor phase, infrared, or
wave soldering techniques. The straight lead version (IRFU series) is for
through-hole mounting applications. Power dissipation levels up to 1.5 watts
are possible in typical surface mount applications. D-PAK I-PAK
TO-252AA TO-251AA
Absolute Maximum Ratings
Parameter Max W Units
ID @ Tc = 25°C Continuous Drain Current, Vas © -10 V _-f._1, y __----
ID © Tc = 100°C Continuous Drain Current, I/ss @ -10 V -3.2 l A
IDM Pulsed Drain Current (O -20 l
£99: To = 25°C Power Dissipation 25 W
Po @ TA Lt 25°C Power Dissipation (PCB Mount)" 2.5
Linear Derating Factor 0.20 W PC
Linear Derating Factor (PCB Mount)" 0.020 - -
Vss Gate-to-Source Voltage $20 - V
EAs Single Pulse Avalanche Energy 2 140 h TTT md
LA.e. F - Avalanche Current (i) -5.1 A
jst; N V 1 Repetitive Avalanche Energy CO 2.5 mJ
dv/dt ! Peak Diode Recovery dv/dt © - -4.5 V/ns
Tu, Tsm Junction and Storage Temperature Range -55 to +150 0 C
_ Soldering Temperature, for 10 seconds 260 (1.6mm from case) --
Thermal Resistance
- Parameter - A Mil, Typ., Max. . Units
R910 Junction-to-Case - - 5.0
~ReJA Junction-to-Ambient (PCB mount)'" - - [ 50 “CW
Ram , Junction-to-Ambient - - ; 1 10 _
** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
IRFR9014, IRFU9014
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(sn)oss Drain-to-Source Breakdown Voltage -60 - - V VGs=OV, lrr---250PA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - -0.059 - VPC Reference to 25°C, lD=-IrnA
Roswn) Static Drain-to-Source On-Resistance - - 0.50 n VGs=-10V, !D=-3.1A CO -
VGS(th) Gate Threshold Voltage -2.0 - -4.0 V Vos-H/ss, ID=-250uA
gfs Forward Transconductance 1.4 - - S VDs=-25V, |D=-3.1A ©
. - - -100 VDs=-60V, Vss=OV
loss Drain-to-Source Leakage Current - - -500 uA Vos=-48V, Ves=0V, TJ=125°C
less Gate-to-Source Forward Leakage - - -100 n A Vss=-20V
Gate-to-Source Reverse Leakage - - 100 VGs=20V
Ch, Total Gate Charge - -..... 12 lro=-6.7A
ths Gate-to-Source Charge - - 3.8 " VDs=-48V
the Gate-to-Drain ("Miller") Charge -.. - 5.1 Ves=-10V See Fig. 6 and 13 ©
tum) Turn-On Delay Time - 11 - VDD=-30V
tr Rise Time - 63 - ns ID=-6.7A
tdtott) Turn-Off Delay Time ......... 9.6 - Re=24§2
t: Fall Time - 31 - RD=4.OQ See Figure 10 ©
Lo Internal Drain Inductance - 4.5 - 't2t"i'J.ite') D
nH from package GE
Ls Internal Source Inductance - 7.5 - Ind center Of Kg)
die contact s
Ciss Input Capacitance - 270 - Vss.-UN
Coss Output Capacitance - 170 - pF VDs=-25V
Crss Reverse Transfer Capacitance - 31 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ, Max. Units Test Conditions
ls Continuous Source Current - - -5 1 MOSFET symbol D
(Body Diode) . A showing the Ci)
lsM Pulsed Source Current _ - -20 integral reverse G (tri',
(Body Diode) C) p-n junction diode. s
Vso Diode Forward Voltage - - -5.5 V TJ=25°C, Is=-5.1A, Vtss--0V ©
trr Reverse Recovery Time - 80 _ 160 ns TJ=25°C, IF---6.7A
Ch, Reverse Recovery Charge b-. g 0.096 0.19 “C di/dt=100A/us CO
ton Forward Tum-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+Ln)
Notes:
(O Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=-25V, starting TJ=25°C, L=6.3mH
RG=25S2, lAs=-5.1A (See Figure 12)
© Isos-6.7A, di/dts.90A/its, VDDSV(BR)DSS.
TJS150°C
co Pulse width f 300 us; duty cycle s2%.
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