IRFR5505 ,-55V Single P-Channel HEXFET Power MOSFET in a D-Pak packageapplications. I-Pak D -PakThe D-Pak is designed for surface mounting using vapor TO-252AA TO-25 ..
IRFR5505GTRPBF ,-55V Single P-Channel HEXFET Power MOSFET in a Halogen Free Lead Free D-Pak package'TJirra Low On-Resistance
P-Channel
Surface Mount (IRFR5505)
Straight Lead (|RFU5505)
Advance ..
IRFR5505PBF ,-55V Single P-Channel HEXFET Power MOSFET in a D-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRFR5505TR ,-55V Single P-Channel HEXFET Power MOSFET in a D-Pak packageapplications. Power dissipation levels up to 1.5 watts arepossible in typical surface mount
IRFR5505TRRPBF ,-55V Single P-Channel HEXFET Power MOSFET in a D-Pak packageapplications. Powert
possible in typical SUIAbsolute Maximum Ratings
Parameter Max. Units
ID ..
IRFR6215 ,-150V Single P-Channel HEXFET Power MOSFET in a D-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
ISL8489IP ,5V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 TransceiversFeaturesLimited, RS-485/RS-422 Transceivers• Specified for 10% Tolerance SuppliesThe Intersil RS-48 ..
ISL8489IP ,5V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 Transceiversapplications. The ISL8488 and • Factory AutomationISL8490 are offered in space saving 8 lead packag ..
ISL8490IB ,5V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 TransceiversFeaturesLimited, RS-485/RS-422 Transceivers• Specified for 10% Tolerance SuppliesThe Intersil RS-48 ..
ISL8490IP ,5V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 Transceiversapplications not requiring Rx and Tx output disable functions (e.g., point-to-point). Half duplex c ..
ISL8491EIB ,+-15kV ESD protected, 5V, low power, high speed and slew rate limited, full duplex, RS-485/RS-422 transceiver.applications, so they are ideal for -250µA (ISL8491E)RS-422 networks requiring high ESD tolerance o ..
ISL8491EIBZ ,+-15kV ESD protected, 5V, low power, high speed and slew rate limited, full duplex, RS-485/RS-422 transceiver.FeaturesHigh Speed and Slew Rate Limited, Full • RS-485 I/O Pin ESD Protection . . . . . . . . . . ..
IRFR5505-IRFR5505PBF-IRFR5505TR-IRFU5505
-55V Single P-Channel HEXFET Power MOSFET in a D-Pak package
PD - 9.1610B
IRFR/U5505
HEXFET® Power MOSFET
International
TOR. Rectifier
Ultra Low On-Resistance
P-Channel D
Surface Mount (IRFR5505)
Straight Lead (IRFU5505)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
VDSS = -55V
RDS(on) = 0.119
O O O O O O 0
ID = -18A
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety ofapplications.
D-Pak I-Pak
The D-Pak is designed for surface mounting using vapor T0-252AA T0-251AA
phase, infrared, orwave soldering techniques. The straight
lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are
possible in typical surface mount applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, I/ss @ -10V -18
ID @ Tc = 100°C Continuous Drain Current, VGS @ -10V -11 A
IDM Pulsed Drain Current CO -64
Pro @Tc = 25°C Power Dissipation 57 W
Linear Derating Factor 0.45 W/°C
I/ss Gate-to-Source Voltage i 20 V
EAS Single Pulse Avalanche Energy© 150 mJ
IAR Avalanche CurrentCD -9.6 A
EAR Repetitive Avalanche Energy© 5.7 mJ
dv/dt Peak Diode Recovery dv/dt © -5.0 V/ns
Tu Operating Junction and -55 to + 150
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
Rac Junction-to-Case - 2.2
ReJA Junction-to-Ambient (PCB mount)" - 50 "C/W
ReJA Junction-to-Ambient - 1 10
8/25/97
IRFR/U5505
International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -55 - - V VGS = 0V, ID = -250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient - -0.049 - V/°C Reference to 25°C, ID = -1mA
RDS(on) Static Drain-to-Source On-Resistance - - 0.11 f2 VGs = -1OV, ID = -9.6A CO
Vngh) Gate Threshold Voltage -2.0 - -4.0 V VDs = l/ss, ID = -250pA
git Forward Transconductance 4.2 - - S VDs = -25V, ID = -9.6A
loss Drain-to-Source Leakage Current - - -25 PA VDS = -55V, VGS = 0V
- - -250 VDS = -44V, VGS = 0V, To = 150°C
less Gate-to-Source Forward Leakage - - -100 n A VGs = 20V
Gate-to-Source Reverse Leakage - - 100 VGS = -20V
Qg Total Gate Charge - - 32 ID = -9.6A
Qgs Gate-to-Source Charge - - 7.1 nC VDS = -44V
di Gate-to-Drain ("Miller") Charge - - 15 VGS = -10V, See Fig. 6 and 13 ©
td(on) Turn-On Delay Time - 12 - VDD = -28V
tr Rise Time - 28 - ns ID = -9.6A
tam) Turn-Off Delay Time - 20 - R9 = 2.6n
tr Fall Time - 16 - RD = 2.89, See Fig. 10 ©
. Between lead, D
LD Internal Drain Inductance - 4.5 - .
nH 6mm (0.25in.) )
Ls Internal Source Inductance -- 7 5 - from package G
. and center of die contacts S
Ciss Input Capacitance - 650 - VGs = 0V
Coss Output Capacitance - 270 - pF VDS = -25V
Crss Reverse Transfer Capacitance - 120 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - -18 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - -64 integral reverse G
(Body Diode) O) p-n junction diode. s
VSD Diode Forward Voltage - - -1.6 V Tu = 25°C, Is = -9.6A, N/ss = 0V (4)
trr Reverse Recovery Time - 51 77 ns T: = 25°C, IF = -9.6A
Qrr Reverse RecoveryCharge - 110 160 nC di/dt = 100A/ps co
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by Ls+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© Starting To-- 25°C, L = 3.2mH
Rs = 250, IAS = -9.6A. (See Figure 12)
© ISD S -9.6A, di/dt S 290A/ps, VDD S V(BR)DSSI
T: S 150°C
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
© Pulse width f 300ps; duty cycle S 2%.
©This is applied for I-PAK, Ls of D-PAK is measured between
lead and center of die contact
