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IRFR4620IRN/a2500avai200V Single N-Channel HEXFET Power MOSFET in a D-Pak package
IRFR4620TRLPBFIRN/a3000avai200V Single N-Channel HEXFET Power MOSFET in a D-Pak package


IRFR4620TRLPBF ,200V Single N-Channel HEXFET Power MOSFET in a D-Pak package96207AIRFR4620PbFIRFU4620PbFHEXFET Power MOSFET
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IRFR4620-IRFR4620TRLPBF
200V Single N-Channel HEXFET Power MOSFET in a D-Pak package
International
Tait Rectifier
PD -96207A
IRFR4620PbF
IRFU4620PbF
HEXFET® Power MOSFET
Applications
o High Efficiency Synchronous Rectification in SMPS Voss 200V
q Uninterruptible Power Supply RDS(on) typ. 64mn
0 High feet Power f.1.h1tcling . . max. 78mf2
o Hard Switched and High Frequency Circuits
ID 24A
Benefits
q Improved Gate, Avalanche and Dynamic dV/dt D
Ruggedness D tiib
o Fully Characterized Capacitance and Avalanche 14i)is, Nie')
SOA I, F P s
Enhanced body diode dV/dt and dI/dt Capability . G s 'GD
Lead-Free
DPak IPAK
IRFR4620PbF IRFU4620PbF
Gate Drain Source
Absolute Maximum Ratings
Symbol Parameter Max. Units
ID © To = 25°C Continuous Drain Current, Vas @ 10V 24
ID @ Tc = 100°C Continuous Drain Current, Vas @ 10V 17 A
IDM Pulsed Drain Current (O 100
PD @Tc = 25°C Maximum Power Dissipation 144 W
Linear Derating Factor 0.96 W/°C
Vas Gate-to-Source Voltage 1 20 V
dv/dt Peak Diode Recovery © 54 V/ns
Tu Operating Junction and -55 to + 175
Tsm Storage Temperature Range 0 C
Soldering Temperature, for 10 seconds 300
(1.6mm from case)
Avalanche Characteristics
EAS (Thermallylimited) Single Pulse Avalanche Energy © 113 mJ
IAR Avalanche Current C) See Fig. 14, 15, 22a, 22b, A
EAR Repetitive Avalanche Energy (D m J
Thermal Resistance
Symbol Parameter Typ. Max. Units
R910 Junction-to-Case - 1.045
RBJA Junction-to-Ambient (PCB Mount) © - 50 °C/W
RSJA Junction-to-Ambient - 110
ORDERING INFORMA TION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes C) through are on page 11


06/08/09
IRFR/U4620PbF
International
TOR Rectifier
Static © T J = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(anss Drain-to-Source Breakdown Voltage 200 - - V l/ss = 0V, ID = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.23 - V/°C Reference to 25°C, ID = 5mAC)
RDSM, Static Drain-to-Source On-Resistance - 64 78 m9 N/ss = 10V, ID = 15A ©
VGS(th) Gate Threshold Voltage 3.0 - 5.0 V VDS = Vss, ID = 100pA
loss Drain-to-Source Leakage Current - - 20 Vos = 200V, Vas = 0V
- - 250 PA vDS = 200v, Vss = ov, Tu = 125°C
less Gate-to-Source Forward Leakage - - 100 Vss = 20V
Gate-to-Source Reverse Leakage - - -100 nA l/ss = -20V
Rem) Internal Gate Resistance -- 2.6 - Q
Dynamic © T J = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 37 - - S Vos = 50V, b = 15A
09 Total Gate Charge - 25 38 ID = 15A
Qgs Gate-to-Source Charge - 8.2 - VDS = 100V
di Gate-to-Drain ("Miller") Charge - 7.9 - nC I/ss = 10V ©
stnc Total Gate Charge Sync. (Qg - di) - 17 - ID = 15A, VDS =0V, Vas = 10V
tam) Turn-On Delay Time - 13.4 - VDD = 130V
t, Rise Time - 22.4 - ID = 15A
tion Turn-Off Delay Time - 25.4 - ns Rs = 7.39
t, Fall Time - 14.8 - l/ss = 10V ©
Ciss Input Capacitance - 1710 - Vss = 0V
Coss Output Capacitance - 125 - Vos = 50V
Crss Reverse Transfer Capacitance - 30 - pF f = 1.0MHz (See Fig.5)
Coss eff. (ER) Effective Output Capacitance (Energy Related)© - 113 - Vas = 0V, Vos = 0V to 160V ©(See Fig.11
Coss eff. (TR) Effective Output Capacitance (Time Related)S - 317 - Vss = 0V, VDS = 0V to 160V G)
Diode Characteristics
Symbol Parameter Min Typ. Max. Unit Conditions
ls Continuous Source Current 24 MOSFET symbol D
(Body Diode) - - A showing the
lo, Pulsed Source Current integral reverse G
. - - 100 . . .
(Body Diode) co p-n junction diode. S
Ita, Diode Forward Voltage - - 1.3 V Tu = 25°C, ls = 15A, l/ss = 0V fi)
tr, Reverse Recovery Time - 78 - TJ = 25°C VR = 100V,
- 99 - ns To-- 125°C |F=15A
Q,, Reverse Recovery Charge - 294 - T, = 25°C di/dt = 100A/ps GD
- 432 - nC TJ = 125°C
|RRM Reverse Recovery Current - 7.6 - A TJ = 25°C
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2

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