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IRFR420IR1N/a7800avai2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFETs
IRFR420PBFIRN/a70avai500V Single N-Channel HEXFET Power MOSFET in a D-Pak package
IRFR420TRIRN/a2382avai500V Single N-Channel HEXFET Power MOSFET in a D-Pak package
IRFR420TRLIRN/a354avai500V Single N-Channel HEXFET Power MOSFET in a D-Pak package
IRFU420IRN/a357avai500V Single N-Channel HEXFET Power MOSFET in a I-Pak package
IRFU420PBFIRN/a150avai500V Single N-Channel HEXFET Power MOSFET in a I-Pak package


IRFR420 ,2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFETsPD-9.599A IRFR420 IRFU420 Internatiqnal TOR Rectifier HEXFET® Power MOSFET q Dynamic ..
IRFR420A ,500V Single N-Channel HEXFET Power MOSFET in a D-Pak packagePD - 94355SMPS MOSFETIRFR420AIRFU420A
IRFR420A ,500V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplications ®HEXFET Power MOSFET Switch Mode Power Supply (SMPS) Uninterruptible Power SupplyV R ..
IRFR420APBF ,500V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplications ®HEXFET Power MOSFET Switch Mode Power Supply (SMPS) Uninterruptible Power SupplyV R ..
IRFR420ATRPBF , Power MOSFET
IRFR420ATRPBF , Power MOSFET
ISL8483EIB ,ESD Protected to 15kV/ 5V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 TransceiversFeaturesHigh Speed or Slew Rate Limited, • RS-485 I/O Pin ESD Protection . . . . . . . . . . . . . ..
ISL8483EIBZ ,ESD protected to +-15kV, 5V, low power, high speed or slew rate limited, RS-485/RS-422 transceiver.FeaturesHigh Speed or Slew Rate Limited, • Pb-free Available as an OptionRS-485/RS-422 Transceivers ..
ISL8483EIP ,ESD Protected to 15kV/ 5V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 Transceiversapplications.• -7V to +12V Common Mode Input Voltage RangeData rates up to 5Mbps are achievable by ..
ISL8483EIP ,ESD Protected to 15kV/ 5V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 TransceiversFeaturesHigh Speed or Slew Rate Limited, • RS-485 I/O Pin ESD Protection . . . . . . . . . . . . . ..
ISL8483IB ,5V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 Transceiversapplications. The ISL8488 and • Factory AutomationISL8490 are offered in space saving 8 lead packag ..
ISL8483IP ,5V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 Transceiversapplications. • Low Quiescent Current:-160µA (ISL8483, ISL8488, ISL8489)Data rates up to 5Mbps are ..


IRFR420-IRFR420PBF-IRFR420TR-IRFR420TRL-IRFU420-IRFU420PBF
500V Single N-Channel HEXFET Power MOSFET in a D-Pak package
.WW-
International
Rectifier
HEXFETO Power MOSFET
PD-9.599A
llRFR420
lRFU420
0 Dynamic dv/dt Rating
0 Repetitive Avalanche Rated '0 -
It Surface Mount (IRFR420) VDSS - 500V
q Straight Lead (IRFU420)
o Available in Tape & Reel G RDS(on) = 3.09
0 Fast Switching
0 Ease of Paralleling s ID = 2.4A
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness. oaaaa"
. . . ' . Ciiiii): -. -
The D-Pak IS designed for surface mounting usmg vapor phase, infrared, or - "
wave soldering techniques. The straight lead version (IRFU series) is for U 'tiii), - .
through-hole mounting applications. Power dissipation levels up to 1.5 watts -e 'Riii)
are possible in typical surface mount applications. D-PAK I-PAK
TO-252AA TO-251AA
Absolute Maximum Ratings
Parameter Max. Units
lo © To = 25°C Continuous Drain Current, Ves @ 10 V 2.4
In @ To = 100°C Continuous Drain Current, VGs @ 10 V 1.5 A
lou Pulsed Drain Current (i) 8.0
PD @ Tc = 25°C Power Dissipation 42 W
Po @ TA = 25°C Power Dissipation (PCB Mount)" 2.5
Linear Derating Factor 0.33 WPC
Linear Derating Factor (PCB Mount)" 0.020
I Vas Gate-to-Source Voltage *20 V
EAS Single Pulse Avalanche Energy (2) 400 md
IAR Avalanche Current (i) 2.4 A
EAR Repetitive Avalanche Energy 0) 4.2 mJ
dv/dtr Peak Diode Recovery dv/dt © 3.5 V/ns
( Tc, Tsro Junction and Storage Temperature Range -55 to +150 °C
l Soldering Temperature, 1r10._et_Ei,t_rEl 260 (1.6mm from case)
Thermal Resistance
L-..” - - _ -iiaTar%ter Min. Typ. Max. Units l
ROJC Ayttipeti-fiaft, - - 3.0
ROJA Junction-to-Ambient (PCB mount)" - - - . - Lt, d_”___-:___ 50 °C/W
Ram Junction-te/tesp/_, - --- - f, - - 110
" When mounted on l" square PCB (FR-4 or G-1O Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
IRFR420, llRFU420
Electrical Characteristics Iii) Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(Bnpss Drain-to-Source Breakdown Voltage 500 - - V VGs=0V, lo: 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.59 - V/°C Reference to 25°C, In: 1mA
Roam) Static Drain-to-Source On-Resistance - - 3.0 Q VGs=10V, 10:1.4A CD
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDs=VGs, Io: 250PA
gfs Forward Transconductance 1.5 - - S Vos=50V, |o=1.4A ©
loss Drain-to-Source Leakage Current - - 25 WA Vrys=500V, I/ss-HN
- - 250 VDs=400V, VGs=0V, TJ=125°C
less Gate-to-Source Forward Leakage - - 100 n A Vss--20V
Gate-to-Source Reverse Leakage - - -1OO VGs=-20V
q, Total Gate Charge - - 19 Io=2.1A
Qgs Gate-to-Source Charge - - 3.3 nC Vos=400V
di Gate-to-Drain ("Miller") Charge - - 13 Ves=10V See Fig. 6 and 13 ©
tam”) Turn-On Delay Time - 8.0 - VDD=250V
tr Rise Time - 8.6 - ns |D=2.1A
tum”) Turn-Off Delay Time - 33 - RG=18§2
1; Fall Time - 16 - RD=120§2 See Figure 10 co
Lo Internal Drain Inductance - 4.5 - ttit,v,1t"(itj1.itilnd,') D
nH from package GQ: )
Ls Internal Source Inductance w 7.5 - Ind center Of
die contact s
Ciss Input Capacitance -- 360 - VGs=OV
Cass Output Capacitance - 92 - pF Vns=25V
Crss Reverse Transfer Capacitance - 37 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
ls Continuous Source Current - -. 2 4 MOSFET symbol D
(Body Diode) q A showing the _'iLii)
ISM Pulsed Source Current - - 8 0 _ integral reverse 6 (tL]
(Body Diode) co . I p-n junction diode. s
Vso Diode Forward Voltage - - 1.6 V TJ=25°C, Is=2.4A, Vas--ti/ ©
tn Reverse Recovery Time - 260 520 ns TJ=25°C, Ip=2.1A
er Reverse Recovery Charge _ - 0.70 1.4 “C di/dt=1OOA/us ©
ton Forward Tu rn-On Time l Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
Ci) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD--50V, starting TJ=25°C, L=124mH
RG=2SQ, |As=2.4A (See Figure 12)
C3) Isog2.4A, di/dtSSOA/us, VDDSV(BR)DSS,
TJS150°C
(a) Pulse width f 300 ps; duty cycle 32%.
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