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IRFR420A-IRFR420APBF-IRFU420A
500V Single N-Channel HEXFET Power MOSFET in a D-Pak package
International
Tart, Rectifier
Applications
0 Switch Mode Power Supply (SMPS)
o Uninterruptible Power Supply
. High speed power switching
Benefits
q Low Gate Charge Qg results in Simple
Drive Requirement
q Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
q Fully Characterized Capacitance and
SMPS MOSFET
PD - 94355
IRFR420A
IRFU420A
HEXFET© Power MOSFET
Rros(on) max ID
Avalanche Voltage and Current D-Pak l-Pak
q Effective Coss specified (See AN 1001) IRFR420A IRFU420A
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, Ves @ 10V 3.3
ID @ To = 100°C Continuous Drain Current, Ves @ 10V 2.1 A
G, Pulsed Drain Current C) 10
PD @Tc = 25°C Power Dissipation 83 W
Linear Derating Factor 0.67 W/''C
l/ss Gate-to-Source Voltage * 30 V
dv/dt Peak Diode Recovery dv/dt © 3.4 V/ns
T: Operating Junction and -55 to + 150
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Avalanche Characteristics
Parameter Typ. Max. Units
EAs Single Pulse Avalanche Energy© - 140 mJ
IAR Avalanche Current© - 2.5 A
EAR Repetitive Avalanche Energy© - 5.0 mJ
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 1.5
Recs Case-to-Sink, Flat, Greased Surface 0.50 - °CNV
' Junction-to-Ambient - 62
1
12/10/01
IRFR420A/IRFU420A International
TOR Rectifier
Static til T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 500 - - V Ves = 0V, ID = 250uA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coemcient - 0.60 - V/°C Reference to 25'C, ID = 1mA
Rrosom Static Drain-to-Source On-Resistance - - 3.0 Q VGS = 10V, ID = 1.5A ©
VGsoh) Gate Threshold Voltage 2.0 - 4.5 V Ws = VGS, ID = 250PA
loss Drain-to-Source Leakage Current - - 25 pA Vros = 500V, VGS = 0V
- - 250 VDs = 400V, Vss = 0V, To = 125°C
I Gate-to-Source Forward Leakage - - 100 n A l/ss = 30V
GSS Gate-to-Source Reverse Leakage - - -100 VGS = -30V
Dynamic @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gts Forward Transconductance 1.4 - - S l/os = 50V, ID = 1.5A
09 Total Gate Charge - - 17 ID = 2.5A
Qgs Gate-to-Source Charge - - 4.3 nC Vros = 400V
di Gate-to-Drain ("Miller") Charge - - 8.5 I/ss = 10V, See Fig. 6 and 13 G)
tum”) Turn-On Delay Time - 8.1 - VDD = 250V
tr Rise Time - 12 - ns ID = 2.5A
tam) Turn-Off Delay Time - 16 - Rs = 219
tr Fall Time - 13 - Ro = 97Q,See Fig. 10 ©
Ciss Input Capacitance - 340 - N/ss = 0V
Coss Output Capacitance - 53 - Vros = 25V
Crss Reverse Transfer Capacitance - 2.7 - pF f = 1.0MHz, See Fig. 5
Coss Output Capacitance - 490 - VGs = 0V, VDS = 1.0V, f = 1.0MHz
Cass Output Capacitance - 15 - VGs = 0V, VDs = 400V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 28 - l/ss = 0V, Vos = 0V to 400V (O
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 3 3 MOSFET symbol D
(Body Diode) . A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) OD - - 10 p-n junction diode. s
Vso Diode Forward Voltage - - 1.6 V TJ = 25°C, IS = 2.5A, VGS = 0V ©
trr Reverse Recovery Time - 330 500 ns To = 25°C, IF = 2.5A
G, Reverse RecoveryCharge - 760 1140 no di/dt = 100Alps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (tum-on is dominated by Ls+LD)
Notes:
co Repetitive rating; pulse width limited by © Pulse width S 300ps; duty cycle f 2%.
max. junction temperature. ( See fig. 11 )
© Starting TJ = 25°C, L = 45mH s Coss eff. is a fixed capacitance that gives the same charging time
Rs = 25f2, IAS; = 2.5A. (See Figure 12) as Coss while Vos is rising from 0 to 80% VDSS
© Iso S 2.5A, di/dt S 270/Ups, VDD S V(BR)ross,
T J s: 150°C
2
