IRFR3911 ,100V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplicationsV R max IDSS DS(on) D High frequency DC-DC converters100V 0.115Ω 14ABenefits Low Gate ..
IRFR410 ,1.5A, 500V, 7.000 Ohm, N-Channel Power MOSFETsFeaturesMOSFETs• 1.5A, 500VThese are N-Channel enhancement mode silicon gate = 7.000Ω•rDS(ON)power ..
IRFR4104 ,40V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications. IRFR4104 IRFU4104Absolute Maximum RatingsParameter Max. UnitsContinuous Drain Current ..
IRFR4105 ,55V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.The D-PAK is designed for surface mounting usingvapor phase, infrared, or wave solder ..
IRFR4105 ,55V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRFR4105TR ,55V Single N-Channel HEXFET Power MOSFET in a D-Pak packagePD - 91302CIRFR/U4105®HEXFET Power MOSFETl Ultra Low On-ResistanceDl Surface Mount (IRFR4105)V = 55 ..
ISL84684IRZ-T ,Ultra Low ON-Resistance, Low Voltage, Single Supply, Dual SPDT Analog SwitchISL84684®Data Sheet June 2004 FN6088Ultra Low ON-Resistance, Low Voltage,
ISL84684IU ,Ultra Low ON-Resistance, Low Voltage, Single Supply, Dual SPDT Analog SwitchISL84684®Data Sheet June 2004 FN6088Ultra Low ON-Resistance, Low Voltage,
ISL84684IU ,Ultra Low ON-Resistance, Low Voltage, Single Supply, Dual SPDT Analog SwitchElectrical Specifications - 3V Supply Test Conditions: V+ = +2.7V to +3.3V, GND = 0V, V = 1.4V, V = ..
ISL84684IUZ ,Ultra Low ON-Resistance, Low Voltage, Single Supply, Dual SPDT Analog SwitchApplicationsTABLE 1.
ISL84684IUZ-T ,Ultra Low ON-Resistance, Low Voltage, Single Supply, Dual SPDT Analog SwitchFEATURES AT A GLANCE• Battery powered, Handheld, and Portable EquipmentISL84684- Cellular/mobile Ph ..
ISL84684IUZ-T ,Ultra Low ON-Resistance, Low Voltage, Single Supply, Dual SPDT Analog Switchapplications include battery powered equipment that benefit from low R (0.25Ω) and fast - V+ = +1.8 ..
IRFR3911
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package
PD - 94272
Internohqrjol |RFR3911
TOR Rectifier SMPS MOSFET IRFU391'1
HEXFET© Power MOSFET
Ap.p..litp..tions Voss RDS(on) max ID
. High frequency DC-DC converters
100V 0.1 1 tin 14A
Benefits
o Low Gate-to-Drain Charge to Reduce
Switching Losses 1i;iiji),r tte
o Fully Characterized Capacitance Including '"cl)i-) 441, L' lf
Effective Coss to Simplify Design, (See ". " .
App. Note AN1001)
o Fully Characterized Avalanche Voltage
and Current D-Pak l-Pak
IRFR3911 IRFU3911
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V 14
ID @ Tc = 100°C Continuous Drain Current, VGs @ 10V 9.5 A
IDM Pulsed Drain Current co 56
Pro @Tc = 25“C Power Dissipation 56 W
Linear Derating Factor 0.37 W/°C
VGS Gate-to-Source Voltage l 20 V
dv/dt Peak Diode Recovery dv/dt © 7.1 V/ns
To Operating Junction and -55 to + 175
TSTG Storage Temperature Range °c
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 2.7
RQJA Junction-to-Ambient (PCB mount)* - 50 °C/W
ReJA Junction-to-Ambient - 110
Notes CO through co are on page 10
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01/22/02
IRFR39r1/lRFU39'11 International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 - - V N/ss = 0V, lo = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coemcient - 0.11 - V/°C Reference to 25°C, ID = 1mA ©
RDS(cn) Static Drain-to-Source On-Resistance - - 0.115 n VGS = 10V, ID = 8.4A Ci)
Vesah) Gate Threshold Voltage 2.0 - 4.0 V Vos = VGs, ID = 250pA
loss Drain-to-Source Leakage Current - - 20 pA Vos = 100V, VGS = 0V
- - 250 Vos = 80V, VGs = 0V, To = 150°C
less Gate-to-Source Forward Leakage - - 100 n A N/ss = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
Dynamic @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gts Forward Transconductance 9.6 - - S Vos = 50V, ID = 8.4A
% Total Gate Charge - 21 32 ID = 8.4A
Qgs Gate-to-Source Charge - 4.3 6.5 nC Vos = 80V
di Gate-to-Drain ("Miller") Charge - 6.6 9.9 VGs = 10V ©
td(on) Turn-On Delay Time - 7.9 - VDD = 500V
tr Rise Time - 26 - ns ID = 8.4A
tdott) Turn-Off Delay Time - 52 - Rs = 22n
If Fall Time - 25 - VGs = 10V ©
Ciss Input Capacitance - 740 - Vss = 0V
Cass Output Capacitance - 110 - Vos = 25V
Crss Reverse Transfer Capacitance - 18 - pF f = 1.0MHz
Coss Output Capacitance - 700 - VGS = 0V, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance - 61 - VGS = 0V, Vos = 80V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 130 - N/ss = 0V, Vros = 0V to 80V ©
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 68 mJ
IAR Avalanche CurrentCD - 8.4 A
EAR Repetitive Avalanche Energy© - 0.0056 mJ
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 14 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) C) - - 56 p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V TJ = 25°C, Is = 8.4A, l/ss = 0V ©
trr Reverse Recovery Time - 86 - ns T: = 25°C, IF = 8.4A
Qrr Reverse RecoveryCharge - 290 - nC di/dt = 100Alps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by L3+LD)
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