IRFR3704ZTR ,Leaded 20V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplicationsHEXFET Power MOSFET High Frequency Synchronous BuckV R maxQgDSS DS(on) Converters ..
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ISL8394IBZ , Low-Voltage, Single and Dual Supply, Quad SPDT, Analog Switches
IRFR3704ZTR
Leaded 20V Single N-Channel HEXFET Power MOSFET in a D-Pak package
International
TOR Rectifier
Applications
PD - 94725
IRFR3704Z
IRFU3704Z
HEXFET*) Power MOSFET
q High Frequency Synchronous Buck
Converters for Computer Processor Power Voss RDS(on) max Qg
o High Frequency Isolated DC-DC 20V 8.4mQ 9_3nc
Converters with Synchronous Rectification
for Telecom and Industrial Use
Benefits 4i,t
0 Very Low RDS(0n) at 4.5V VGS 'd, l lift F",
o Ultra-Low Gate Impedance . l r
q Fully Characterized Avalanche Voltage /
and Current D-Pak l-Pak
IRFR3704Z IRFU3704Z
Absolute Maximum Ratings
Parameter Max. Units
I/os Drain-to-Source Voltage 20 V
VGS Gate-to-Source Voltage i 20
ID @ Tc = 25°C Continuous Drain Current, Ves @ 10V 60© A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 42©
IDM Pulsed Drain Current (D 240
PD @Tc = 25°C Maximum Power Dissipation 48 W
PD @Tc = 100°C Maximum Power Dissipation 24
Linear Derating Factor 0.32 W/°C
To Operating Junction and -55 to + 175 ''C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
Parameter Typ. Max. Units
Rm Junction-to-Case - 3.1 “CNV
ROJA Junction-to-Ambient (PCB Mount) s - 50
ROJA Junction-to-Ambient - 110
Notes OD through s are on page 11
1
07/10/03
IRFR/U3704Z International
. . . . TOR ilectifier
Static @ T J = 25''C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 20 - - V VGS = 0V, ID = 250PA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 0.015 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 6.7 8.4 m9 VGS = 10V, ID = 15A ©
- 9.2 11.4 VGS = 4.5V, ID = 12A ©
VGS(th) Gate Threshold Voltage 1.65 2.1 2.55 V Vos = VGS, ID = 250PA
AVGsah)/ATJ Gate Threshold Voltage Coemcient - -5.5 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 pA I/os =16V, I/ss = 0V
- - 150 Vos = 16V, Vss = 0V, T: = 125°C
less Gate-to-Source Forward Leakage - - 100 nA VGS = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
gfs Forward Transconductance 41 - - S Vos = 10V, ID = 12A
09 Total Gate Charge - 9.3 14
0951 Pre-Vth Gate-to-Source Charge - 3.0 - Ws = 10V
0952 Post-Vth Gate-to-Source Charge - 1.1 - nC I/ss = 4.5V
di Gate-to-Drain Charge - 2.7 - ID = 12A
ngdr Gate Charge Overdrive - 2.5 - See Fig. 16
st Switch Charge (Qgsz + di) - 3.8 -
Qoss Output Charge - 5.6 - nC vDs = 10V, N/ss = OV
tum) Turn-On Delay Time - 41 - VDD = 10V, VGS = 4.5V ©
t, Rise Time - 8.9 - ID = 12A
tum) Turn-Off Delay Time - 4.9 - ns Clamped Inductive Load
t, Fall Time - 12 -
Ciss Input Capacitance - 1190 - I/ss = 0V
Coss Output Capacitance - 380 - pF l/ns = 10V
Crss Reverse Transfer Capacitance - 170 - f = 1.0MHz
Avalanche Characteristics
Parameter . Max.
EAS ng 41
IAR 12
EAR 4.8
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 60(9 MOSFET symbol a
(Body Diode) A showing the
ISM Pulsed Source Current - - 240 integral reverse G
(Body Diode) OD p-n junction diode. S
Vso Diode Forward Voltage - - 1.0 V TJ = 25°C, Is = 12A, VGS = 0V ©
trr Reverse Recovery Time - 13 19 ns TJ = 25°C, IF = 12A, VDD = 10V
er Reverse Recovery Charge - 4.2 6.3 no di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
