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IRFR3704IRN/a24000avai20V Single N-Channel HEXFET Power MOSFET in a D-Pak package
IRFR3704PBFIRN/a60avai20V Single N-Channel HEXFET Power MOSFET in a D-Pak package
IRFR3704TRIRN/a5378avai20V Single N-Channel HEXFET Power MOSFET in a D-Pak package
IRFR3704TRLIRN/a5098avai20V Single N-Channel HEXFET Power MOSFET in a D-Pak package
IRFU3704IRN/a300avai20V Single N-Channel HEXFET Power MOSFET in a I-Pak package


IRFR3704 ,20V Single N-Channel HEXFET Power MOSFET in a D-Pak packageIRFR3704SMPS MOSFETIRFU3704
IRFR3704PBF ,20V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplicationsHEXFET Power MOSFET High Frequency DC-DC IsolatedV R max IDSS DS(on) D Converters ..
IRFR3704TR ,20V Single N-Channel HEXFET Power MOSFET in a D-Pak packageIRFR3704SMPS MOSFETIRFU3704
IRFR3704TRL ,20V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplicationsHEXFET Power MOSFET High Frequency DC-DC IsolatedV R max IDSS DS(on) D Converters ..
IRFR3704TRLPBF ,20V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplicationsHEXFET Power MOSFET High Frequency DC-DC IsolatedV R max IDSS DS(on) D Converters ..
IRFR3704Z ,20V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplicationsHEXFET Power MOSFET High Frequency Synchronous BuckV R maxQgDSS DS(on) Converters ..
ISL83485IBZ , 3.3V, Low Power, High Speed or Slew Rate Limited, RS-485/RS-422 Transceivers
ISL83485IP ,3.3V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 TransceiversApplicationsDriver (Tx) outputs are short circuit protected, even for • Factory Automationvoltages ..
ISL83488IB ,3.3V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 Transceiversapplications. • Level Translators (e.g., RS-232 to RS-422)The ISL83488 and ISL83490 are offered in ..
ISL83490IB ,3.3V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 Transceiversapplications not requiring Rx and Tx • RS-232 “Extension Cords”output disable functions (e.g., poin ..
ISL83490IP ,3.3V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 TransceiversFeaturesRate Limited, RS-485/RS-422 Transceivers• Operate from a Single +3.3V Supply (10% Tolerance ..
ISL83491IB ,3.3V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 TransceiversFeaturesRate Limited, RS-485/RS-422 Transceivers• Operate from a Single +3.3V Supply (10% Tolerance ..


IRFR3704-IRFR3704PBF-IRFR3704TR-IRFR3704TRL-IRFU3704
20V Single N-Channel HEXFET Power MOSFET in a D-Pak package
International
TOR Rectifier SMPS MOSFET
Applications
q High Frequency DC-DC Isolated
Converters with Synchronous Rectification
for Telecom and Industrial use
0 High Frequency Buck Converters for
Computer Processor Power
0 100% Rs Tested
Benefits
q Very Low Gate Impedance
q Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
PD-93887D
IRFR3704
IRFU3704
HEXFET® Power MOSFET
RDS(on) max
IRFR3704 IRFU3704
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID @ To = 25°C Continuous Drain Current, Vss @ 10V
ID @ To = 70°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current C)
Pro @TC = 25°C Maximum Power Dissipation ©
Po @TA = 70°C Maximum Power Dissipation ©
Linear Derating Factor
T J, TSTG Junction and Storage Temperature Range
-55 to +175
Thermal Resistance
Symbol Parameter
Rm Junction-to-Case ©
ROJA Junction-to-Ambient (PCB Mount) 'S
ReJA Junction-to-Ambient s
* When mounted on 1" square PCB (FR-4 or G-IO Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
Notes co through (9 are on page 9


3/4/04
IRFR/U3704
International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Symbol Parameter Min Typ Max Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 20 - - V VGS = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. CoeNcient - 0.021 - V/°C Reference to 25°C, ID = 1mA
Rosmn) Static Drain-to-Source On-Resistance - 7.3 9.5 mn VGS = 10V, ID = 15A ©
11 14 VGS=4.5V, b=12AC3)
Vesuh) Gate Threshold Voltage 1.0 - 3.0 V Ws = Vss, ID = 250pA
loss Drain-to-Source Leakage Current - - 10 pA Ws = 20V, Vss = 0V
- - 100 Vos =16V,VGS = 0V, T, =125°C
I Gate-to-Source Forward Leakage - - 200 VGS = 16V
GSS Gate-to-Source Reverse Leakage - - -200 nA VGS = -16V
Dynamic @ To = 25°C (unless otherwise specified)
Symbol Parameter Min Typ Max Units Conditions
gs Forward Transconductance 42 - - S Ws = 25V, ID = 57A
Qg Total Gate Charge - 19 - ID = 28.4A
Qgs Gate-to-Source Charge - 8.1 - nC Vos = 10V
di Gate-to-Drain ("Miller") Charge - 6.4 - VGS = 4.5V ©
Qoss Output Gate Charge - 16 24 V65 = 0V, VDs = 10V
Re Gate Resistance 0.3 - 3.2 Q
tum) Turn-On Delay Time - 8.4 - VDD = 10V
tr Rise Time - 98 - ID = 28.4A
td(off) Turn-Off Delay Time - 12 - ns Rs = 1.89
tr Fall Time - 5.0 - VCs = 4.5V ©
Ciss Input Capacitance - 1996 - VGS = ov
Cass Output Capacitance - 1085 - pF Voss = 10V
Crss Reverse Transfer Capacitance - 155 - f = 1.0MHz
Avalanche Characteristics
Symbol Parameter Typ Max Units
EAS Single Pulse Avalanche Energy© - 216 mJ
IAR Avalanche Current 0) - 71 A
Diode Characteristics
Symbol Parameter Min Typ Max Units Conditions
IS Continuous Source Current 75 CO MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current _ _ 300 integral reverse G
(Body Diode) C) p-njunction diode. R
VSD Diode Forward Voltage - 0.88 1.3 V TJ = 25°C, Is = 35.5A, VGs = 0V ©
- 0.82 - TJ = 125°C, IS = 35.5A, VGS = OV ©
trr Reverse Recovery Time - 38 57 ns TJ = 25''C, IF = 35.5A, VR = 20V
Qrr Reverse Recovery Charge - 45 68 nC di/dt = 100/Vps ©
trr Reverse Recovery Time - 41 62 ns Tu = 125°C, IF = 35.5A, VR-- 20V
Qrr Reverse Recovery Charge - 50 75 nC di/dt = 100A/ps (j)
2

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