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IRFR3504TRPBFIRN/a10000avai40V Single N-Channel HEXFET Power MOSFET in a D-Pak package


IRFR3504TRPBF ,40V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications. D-Pak I-PakIRFR3504PbF IRFU3504PbFAbsolute Maximum RatingsParameter Max. UnitsI @ T = ..
IRFR3504Z ,40V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications. IRFR3504Z IRFU3504ZAbsolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuou ..
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IRFR3505 ,55V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRFR3505TRLPBF ,55V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRFR3518 ,80V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplications High frequency DC-DC convertersV R max IDSS DS(on) D 80V 29m 30ABenefits Low Gate ..
ISL83483IB ,3.3V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 TransceiversApplicationsDriver (Tx) outputs are short circuit protected, even for • Factory Automationvoltages ..
ISL83483IP ,3.3V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 Transceiversapplications.• -7V to +12V Common Mode Input Voltage RangeData rates up to 10Mbps are achievable by ..
ISL83485IB ,3.3V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 Transceiversapplications.• -7V to +12V Common Mode Input Voltage RangeData rates up to 10Mbps are achievable by ..
ISL83485IBZ , 3.3V, Low Power, High Speed or Slew Rate Limited, RS-485/RS-422 Transceivers
ISL83485IBZ , 3.3V, Low Power, High Speed or Slew Rate Limited, RS-485/RS-422 Transceivers
ISL83485IP ,3.3V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 TransceiversApplicationsDriver (Tx) outputs are short circuit protected, even for • Factory Automationvoltages ..


IRFR3504TRPBF
40V Single N-Channel HEXFET Power MOSFET in a D-Pak package
International |RFR3502§ESFB
TOR. Rectifier
Features IR FU3504Pb F
Advanced Process Technology HEXFET® Power MOSFET
Ultra Low On-Resistance
175°C Operating Temperatu re
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
Description G
This HEXFET© Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this product are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating. These features combine to make
this design an extremely efficient and reliable device for use in
a wide variety of applications.
VDSS = 40V
RDS(on) = 9.2mf2
ID = 30A
The D-Pak is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are
possible in typical surface mount applications. D-Pak I-Pak
IRFR3504PbF IRFU3504PbF
(‘ U) U
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, Vss @ 10V (Silicon limited) 87
ID @ To = 100°C Continuous Drain Current, Ves @ 10V (See Fig.9) 61 A
ID @ To = 25°C Continuous Drain Current, Ves @ 10V (Package limited) 30
G, Pulsed Drain Current (D 350
Po ©Tc = 25°C Power Dissipation 140 W
Linear Derating Factor 0.92 W/°C
Vss Gate-to-Source Voltage t 20 V
EAS Single Pulse Avalanche Energy© 240 mJ
EAS (tested) Single Pulse Avalanche Energy Tested Value© 480
IAR Avalanche Current© See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy© mJ
Tu Operating Junction and -55 to + 175
TSTG Storage Temperature Range 00
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
Roos Junction-to-Case - 1.09
RQJA Junction-to-Ambient (PCB mount)© - 50 °C/W
ReJA Junction-to-Ambient - 110
HEXFET(R) is a registered trademark of International Rectifier.
1
09/21/10

IRFR/ U 3504PbF International
TOR Rectifier
Electrical Characteristics © TU = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 40 -- - V l/ss = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.041 - V/°C Reference to 25°C, ID = 1mA
Roam) Static Drain-to-Source On-Resistance - 7.8 9.2 mn VGs = 10V, ID = 30A ©
VGS(1h) Gate Threshold Voltage 2.0 - 4.0 V Vos = 10V, ID = 250pA
gfs Forward Transconductance 40 - - S Vos = 10V, ID = 30A
loss Drain-to-Source Leakage Current - - 20 pA l/os = 40V, l/ss = 0V
- - 250 VDS = 40V, Vss = 0V, Tu = 125°C
ds Gate-to-Source Forward Leakage - - 200 n A Vas = 20V
Gate-to-Source Reverse Leakage - - -200 VGs = -20V
% Total Gate Charge - 48 71 ID = 30A
Qgs Gate-to-Source Charge - 12 18 nC Vos = 32V
di Gate-to-Drain ("Miller") Charge - 13 20 Vias =10V©
td(on) Turn-On Delay Time - 11 - VDD = 20V
tr Rise Time - 53 - ID = 30A
two”, Turn-Off Delay Time - 36 - ns Rs = 6.89
tt Fall Time - 22 - VGS = 10V ©
LD Internal Drain Inductance - 4.5 - Between lead, D
nH 6mm (0.25in.) E )
Ls Internal Source Inductance --.- 7.5 - from package G
and center of die contact s
Ciss Input Capacitance - 2150 - l/ss = 0V
Coss Output Capacitance - 580 - VDS = 25V
Crss Reverse Transfer Capacitance - 46 - pF f = 1.0MHz, See Fig. 5
Coss Output Capacitance - 2830 - Vias = 0V, Vos = 1.0V, f = 1.0MHz
Cass Output Capacitance - 510 - l/ss = 0V, Ihas = 32V, f = 1.0MHz
Coss eff. Effective Output Capacitance s - 870 - l/ss = 0V, Vos = 0V to 32V
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
. - - 87 .
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) CD - _ 350 p-n junction diode. s
l/so Diode Forward Voltage - - 1.3 V Tu = 25°C, Is = 30A, l/ss = 0V (0
trr Reverse Recovery Time - 53 80 ns Tu = 25°C, IF = 30A, VDD = 20V
G, Reverse Recovery Charge - 86 130 nC di/dt=100A/us (0
ton Forward Turn-On Time Intrinsic tum-on time is negligible (turn-on is dominated by LS+LD)
2

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